대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)
- 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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- Pages.328-331
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- 1988
SILO 구조의 제작 방법과 소자 분리 특성
Fabrication and characterization of SILO isolation structure
- Choi, Soo-Han (Samsung Semiconductor & Telecommunications Co., Ltd.) ;
- Jang, Tae-Kyong (Samsung Semiconductor & Telecommunications Co., Ltd.) ;
- Kim, Byeong-Yeol (Samsung Semiconductor & Telecommunications Co., Ltd.)
- 발행 : 1988.07.01
초록
Sealed Interface Local Oxidation (SILO) technology has been investigated using a nitride/oxide/nitride three-layered sandwich structure. P-type silicon substrate was either nitrided by rapid thermal processing, or silicon nitride was deposited by LPCVD method. A three-layered sandwich structure was patterned either by reactive ion etch (RIE) mode or by plasma mode. Sacrificial oxidation conditions were also varied. Physical characterization such as cross-section analysis of field oxide, and electrical characterization such as gate oxide integrity, junction leakage and transistor behavior were carried out. It was found that bird's beak was nearly zero or below 0.1um, and the junction leakages in plasma mode were low compared to devices of the same geometry patterned in RIE mode, and gate oxide integrity and transistor behavior were comparable. Conclusively, SILO process is compatible with conventional local oxidation process.
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