비정질 실리콘 $n^{+}-p-p^{+}$ 태양전지의 특성 연구

Characterization of Amorphous Silicon $n^{+}-p-p^{+}$ Solar Cells

The photovoltaic performances of a-si : H$n^{+}-p-p^{+}$ solar cells have been investigated. The optimum substrate temperature for the deposition of a-Si : H $n^{+}-p-p^{+}$ cell decreases with increasing doping concentration of the p-layer, and is less than 200$^{\circ}C$ when the gas phase doping concentration is higher than 10 ppm. The results can be explained as the dependences of substrate temperature for the relaxation of silicon atoms and for the bonded hydrogen concentration in the p-layer.