SUBMICRON TECHNOLOGY OF SINGLE LAYER PHOTO-RESIT

단층RESIST의 미세패턴형성기술

THE STUDY ABOUT CHARACTERISTICS OF PHOTO RESIST ITSELF (MINIMUM RESOLUTION, DEPTH OF FOCUS MARGIN AND CRITICAL DIMENSION CONTROL LATITUDE) WAS DONE AND REPORTED. THREE TYPES OF PHOTO RESISTS WERE TESTED. THE FIRST IS THE LOW MOLECULAR WEIGHT PHOTO-RESIST SHOWING THE NARROW DISTRIBUTION OF MOLECULAR WEIGHT (LOW MOLECULAR WEIGHT CONTROL TYPE), THE SECOND IS A PHOTO-RESIST CONTAINING THE INNER CONTRAST ENCHANCEMENT MATERIAL (INNER CEM TYPE) AND THE THIRD IS A NORMAL PHOTO-RESIST (HIGH MOLECULAR WEIGHT TYPE). THE INNER CEM TYPE AND THE LOW MOLECULAR WEIGHT CONTROL TYPE PHOTO-RESIST ARE MORE IMPROVED PHOTO-RESISTS. IT PROVED THAT THE MINIMUM RESOLUTION WAS IMPROVED BY 0.2 - 0.3 um, THE DEPTH OF FOCUS MARGIN WAS IMPROVED BY 0.8 - 1.2 um AND THE C.D. CONTROL LATITUIDE WAS IMPROVED.

PHOTO-RESIST 자체문제로인해 감소되는 최소해상력, 촛집심도여유 및 CRITICAL DIMENSION (C.D.) 조정여유도등을 연구하였다. 기존에 사용중인 PHOTO-RESIST(큰 분자량)와 PHOTO-RESIST자체내에 CONTRAST 촉진 물질(CEM)이 첨가된것(INNER CEM TYPE) 및 PHOTO-RESIST구성성분중 작은 분자량/좁은 분자량 산포가 형성된 RESIN 의 PHOTO-RESIST(LOW MOLECULAR WEIGHT CONTROL TYPE)등 세가지 PHOTO-RESIST를 사용 하여 상기의 항목을 분석하였다. INNER CEM TYPE 및 LOW MOLECULAR WEIGHT CONTROL TYPE의 PHOTO-RESIST는 기존에 사용중인 RESIST보다, 최소 RESOLUTION은 약 0.2 - 0.3 um, DEPOCUS MARGIN은 약 0.8 - 1.2 um 및 C.D. CONTROL LATITUDE 향상된 것 등이 우수하였다.