Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A production of two-dimensional impurity using boundary element method in silicon

경계요소법을 이용한 실리콘내에서 2차원 불순물 분포의 산출

  • 김찬규 (중앙대학교 대학원 반도체공학) ;
  • 황호정 (중앙대학교 대학원 반도체공학)
  • Published : 1987.07.03
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Abstract

A two-dimensional numerical simulation program is presented which enables the concentrion of impurity in Silicon to be caculated. The numerical algorithm used is based on the boundary element menthod.

Keywords