• 제목/요약/키워드: x-ray photoelectron

검색결과 1,478건 처리시간 0.027초

Dry Etching Characteristics of TiN Thin Films in BCl3-Based Plasma

  • Woo, Jong-Chang;Park, Jung-Soo;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제12권3호
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    • pp.106-109
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    • 2011
  • We investigated the etching characteristics of titanium nitride (TiN) thin film in $BCl_3$/Ar inductively coupled plasma. The etching parameters were the gas mixing ratio, radio frequency (RF) power, direct current (DC)-bias voltages and process pressures. The standard conditions were as follows: total flow rate = 20 sccm, RF power = 500 W, DC-bias voltage = -100 V, substrate temperature = $40^{\circ}C$, and process pressure = 15 mTorr. The maximum etch rate of TiN thin film and the selectivity of TiN to $Al_2O_3$ thin film were 54 nm/min and 0.79. The results of X-ray photoelectron spectroscopy showed no accumulation of etch byproducts from the etched surface of TiN thin film. The TiN film etch was dominated by the chemical etching with assistance by Ar sputtering in reactive ion etching mechanism, based on the experimental results.

Effect of Doping Si in DLC Thin Films Growth on Their Mechanical Properties

  • 김대영;박민석;진인태
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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    • pp.369.2-369.2
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    • 2014
  • Diamond-like Carbon(DLC) films doping Si were deposited by linear ion source(LIS)-physical vapor deposition method on Si wafer. We have studied the effects of Si content on friction and wear properties of DLC films and the characteristics of the films were investigated using Nano-indentation, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS). The films has been various low-friction and low-stress by varying the flow rates of silane gas. Under the about 2% of Si doping is very suitable for improving the adhesion of films and reducing internal stress while maintaining the surfaces hardness of DLC films. Linear ion source (LIS)를 사용하여 Si wafer위에 Si 이온이 첨가된 DLC 박막을 증착하였다. 참가된Si 이온의 양에 따라 DLC 박막에 미치는 영향을 분석하기 위하여 마찰 계수 및 경도를 비교하였고, Micro raman spectroscopy, Field Emission-Scanning Electron Microscope (FM-SEM) and X-ray Photoelectron Spectroscopy (XPS)를 통하여 표면 상태를 분석하였다. 천체 주입된 가스량의 약 2%까지 Si 이온 주입이 늘어날수록 DLC 박막의 마찰계수는 낮아졌고, 경도는 Si 이온이 주입되지 않았을 경우와 비슷한 값(약 20~23 GPa)을 가졌다. 2% 이상의 주입량에서는 마찰계수는 주입량이 늘어날수록 높아졌으며 경도는 떨어지는 경향을 보였다. 이는 Si이온이 2%이하로 첨가되었을 경우, DLC 박막의 생성시 탄소 이온들의 결합 Stress를 줄여 마찰계수가 줄어든다고 볼 수 있으며, 그 양이 2%이상이 되면 오히려 불순물로 작용하여 DLC 박막의 Stress는 급격히 증가하고 마찰계수도 높아짐을 알 수 있다.

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자장 강화 반응성 이온 식각 장비를 이용한 몰리브덴 박막의 식각 특성 연구 (A Study on Etching Characteristics of Molybdenum Thin Films by Magnetically Enhanced Reactive lon Etching System)

  • 김남훈;권광호;김창일;장의구
    • 한국전기전자재료학회논문지
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    • 제13권1호
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    • pp.6-12
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    • 2000
  • In this study, molybdenum thin films were etched with Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio in an magneti-cally enhanced reactive ion etching(MERIE) by the etching parameters such as rf power of 250 watts, chamber pressure of 100 mTorr and B-field of 30 gauss. The etch rate was 150nm/min under Cl\ulcorner/(Cl\ulcorner+SF\ulcorner) gas mixing ratio of 0.25. At this time, the selectivity of Mo to SiO\ulcorner, photoresist were respectively 0.94, 0.05. The surface reaction of the etched Mo thin films was investigated with X-ray photoelectron spectroscopy(XPS). It was analyzed that Mo peaks was mainly observed in Mo-O bonds formed MoO\ulcorner compounds and F was detected in Mo-F and O-F bonds. Cl peaks were detected by the peak of Cl 2p\ulcorner in Cl-Mo bonds of MoCl\ulcorner or MoO\ulcornerCl\ulcorner formulas. Almost all of both Cl and S atoms had been com-bined with Mo, respectively.

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Preparation and characterization of ceria nanofibers obtained by electrospinning

  • Hwang, A.R.;Park, J.Y.;Koh, S.W.;Kang, Y.C.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.70-70
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    • 2010
  • Cerium oxide nanofibers have been of great interest in fundamental level study. We fabricated polyvinylpyrollidone (PVP) and cerium nitrate nanofibers composite applying a mixed solution of PVP and cerium nitrate hydrate (Ce(NO3)3) with various cerium concentration from 8.87 to 35.5wt% by electrospinning process. Electrospinning method is a simple and cost-effective process to make nanoand submicro nanofiber fabrication. We applied 0.69 kV/cm of electric field between the capillary and a drum collector covered with aluminum foil. Cerium oxide nanofibers were obtained after calcination of PVP/Ce(NO3)3 nanofibers composite at 573, 873 and 1273K, which were chosen by thermal gravimetry analysis. The obtained nanofibers were characterized by scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS). When the viscosity of the electrospinning solution was high named over 60 cP, only nano and submicro-sized cerium oxide fibers were collected. X-ray photoelectron spectroscopy (XPS) was performed for investigation of the chemical nature of the obtained ceria nanofibers. After we calcined the PVP/ceria nanocomposites, metallic cerium was oxidized to cerium oxide including ceria.

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활성화 반응 증발법에 의한 Al2O3 박막 형성 (Formation of Al2O3 Film by Activated Reactive Evaporation Method)

  • 박용근;최재하
    • 열처리공학회지
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    • 제14권5호
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    • pp.292-296
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    • 2001
  • In this work, an ultra-high vacuum activated reactive evaporation equipment was built. With reaction of Al and oxygen plasma, $Al_2O_3$ was deposited on the surface of etched Al foil. The chamber was evacuated down to $2{\times}10^{-7}$ torr initially. The Ar and $O_2$ gas introduced into the chamber to maintain $5{\times}10^{-5}$ torr during deposition. Ar gas prevents recombining of the ionized oxygen. Evaporation was maintained by electron beam evaporator continuously. Heating filament and electrode were used in order to generate plasma. The substrate bias of -300V was introduced to accelerate deposition of evaporated Al atoms. The composition and morphology of deposited $Al_2O_3$ films were analyzed by x-ray photoelectron spectroscopy(XPS) and atomic force microscopy (AFM), respectively. The Al oxide was formed on the surface of etched Al foil. According to AFM results, the surface morphology of $Al_2O_3$ film indicates uniform feature. Dielectric characteristic was measured as a function of frequency. Measured withstanding voltage and capacitance were 52V and $24{\mu}F/cm^2$, respectively. The obtained $Al_2O_3$ film shows clean condition without contaminants, which could be adapted to capacitor production.

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Tribological properties of sputtered boron carbide coating and the effect of $CH_4$ reactive component of processing gas

  • Cuong Pham Duc;Ahn Hyo-Sok;Kim Jong-Hee;Shin Kyung-Ho
    • 한국윤활학회:학술대회논문집
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    • 한국윤활학회 2003년도 학술대회지
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    • pp.78-84
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    • 2003
  • Boron carbide thin coatings were deposited on silicon wafers by DC magnetron sputtering using a $B_4C$ target with As as processing gas. Various amounts of methane gas $(CH_4)$ were added in the deposition process to better understand their influence on tribological properties of the coatings. Reciprocating wear tests employing an oscillating friction wear tester were performed to investigate the tribological behaviors of the coatings in ambient environment. The chemical characteristics of the coatings and worn surfaces were studied using X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). It revealed that $CH_4$ addition to As processing gas strongly affected the tribologcal properties of sputtered boron carbide coating. The coefficient of friction was reduced approximately from 0.4 to 0.1, and wear resistance was improved considerably by increasing the ratio of $CH_4$, gas component from 0 to $1.2\;vol\;\%$. By adding a sufficient amount of $CH_4\;(1.2\%)$ in the deposition process, the boron carbide coating exhibited lowest friction and highest wear resistance.

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Etching Characteristics of HfAlO3 Thin Films Using an Cl2/BCl3/Ar Inductively Coupled Plasma

  • Ha, Tae-Kyung;Woo, Jong-Chang;Kim, Chang-Il
    • Transactions on Electrical and Electronic Materials
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    • 제11권4호
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    • pp.166-169
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    • 2010
  • In this study, we changed the etch parameters (gas mixing ratio, radio frequency [RF] power, direct current [DC]-bias voltage, and process pressure) and then monitored the effect on the $HfAlO_3$ thin film etch rate and the selectivity with $SiO_2$. A maximum etch rate of 108.7 nm/min was obtained in $Cl_2$ (3 sccm)/$BCl_3$ (4 sccm)/Ar (16 sccm) plasma. The etch selectivity of $HfAlO_3$ to $SiO_2$ reached 1.11. As the RF power and the DC-bias voltage increased, the etch rate of the $HfAlO_3$ thin film increased. As the process pressure increased, the etch rate of the $HfAlO_3$ thin films increased. The chemical state of the etched surfaces was investigated with X-ray photoelectron spectroscopy. According to the results, the etching of $HfAlO_3$ thin film follows the ion-assisted chemical etching.

Formation and Structure of Self-Assembled Monolayers of Octylthioacetates on Au(111) in Catalytic Tetrabutylammonium Cyanide Solution

  • Park, Tae-Sung;Kang, Hun-Gu;Choi, In-Chang;Chung, Hoe-Il;Ito, Eisuke;Hara, Masahiko;Noh, Jae-Geun
    • Bulletin of the Korean Chemical Society
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    • 제30권2호
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    • pp.441-444
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    • 2009
  • The formation and structure of self-assembled monolayers (SAMs) by the adsorption of acetyl-protected octylthioacetate (OTA) on Au(111) in a catalytic tetrabutylammonium cyanide (TBACN) solution were examined by means of scanning tunneling microscopy (STM), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry (CV). Molecular-scale STM imaging revealed that OTA molecules on Au(111) in a pure solvent form disordered SAMs, whereas they form well-ordered SAMs showing a c(4 × 2) structure in a catalytic TBACN solution. XPS and CV measurements also revealed that OTA SAMs on Au(111) formed in a TBACN solution have a stronger chemisorbed peak in the S 2p region at 162 eV and a higher blocking effect compared to OTA SAMs formed in a pure solvent. In this study, we clearly demonstrate that TBACN can be used as an effective deprotecting reagent for obtaining well-ordered SAMs of thioacetyl-protected molecules on gold.

Characterization of chemical vapor deposition-grown graphene films with various etchants

  • Choi, Hong-Kyw;Kim, Jong-Yun;Jeong, Hu-Young;Choi, Choon-Gi;Choi, Sung-Yool
    • Carbon letters
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    • 제13권1호
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    • pp.44-47
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    • 2012
  • We analyzed the effect of etchants for metal catalysts in terms of the characteristics of resulting graphene films, such as sheet resistance, hall mobility, transmittance, and carrier concentration. We found the residue of $FeCl_3$ etchant degraded the sheet resistance and mobility of graphene films. The residue was identified as an iron oxide containing a small amount of Cl through elemental analysis using X-ray photoelectron spectroscopy. To remove this residue, we provide an alternative etching solution by introducing acidic etching solutions and their combinations ($HNO_3$, HCl, $FeCl_3$ + HCl, and $FeCl_3+HNO_3$). The combination of $FeCl_3$ and acidic solutions (HCl and $HNO_3$) resulted in more enhanced electrical properties than pure etchants, which is attributed to the elimination of left over etching residue, and a small amount of amorphous carbon debris after the etching process.

X-ray Photoelectron Spectroscopy Study of Cobalt Supported Multi-walled Carbon Nanotubes Prepared by Different Precursors

  • Lee, Jeong-Min;Kim, Ju-Wan;Lim, Ji-Sun;Kim, Tae-Jin;Kim, Shin-Dong;Park, Soo-Jin;Lee, Young-Seak
    • Carbon letters
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    • 제8권2호
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    • pp.120-126
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    • 2007
  • The effect of cobalt precursor on the structure of Co supported multi-walled carbon nanotubes (MWCNTs) were studied by using X-ray photoelectron spectroscopy (XPS). MWCNTs were treated with a mixture of nitric and sulfuric acids and decorated with cobalt and/or cobalt oxides via aqueous impregnation solutions of cobalt nitrate or cobalt acetate followed by reduction in hydrogen. XPS was mainly used to investigate the phase of cobalt on MWCNTs after reduction with $H_2$ flow at $400^{\circ}C$ for 2 h. Higher cobalt-nanoparticle dispersion was found in the MWCNTS prepared via cobalt nitrate decomposition. A typical XPS spectrum of Co 2p showed the peaks at binding energy (BE) values equal to 781 and 797 eV, respectively. It is found that cobalt nitrate supported MWCNTs is more dispersive and have catalytic activity than that of cobalt acetate supported MWCNTs at same preparation condition such as concentration of precursor solution and reduction environment.