• Proceedings of the KIPE Conference
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• 2018.11a
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• pp.159-160
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• 2018

본 논문에서는 인덕션 쿠커의 토폴로지 중 하나인 직렬 공진 하프-브릿지 컨버터에 Wide-Bandgap 전력 반도체를 적용하여 전력 손실을 평가한다. 전력 반도체의 발전으로 Si-기반의 전력반도체를 대체할 GaN과 SiC의 Wide-Bandgap 소자들이 양산되고 있다. Wide-Bandgap 소자의 장점은 고주파수에서의 동작과 낮은 손실에 있다. 이에 인덕션 쿠커의 직렬 공진 하프-브릿지 컨버터에 Wide-Bandgap 전력반도체를 적용하여 전력 손실을 PSIM Thermal Module을 통해 평가하고 인덕션 쿠커에 적합한 소자를 선정한다.

• Ceramist
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• v.22 no.2
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• pp.146-169
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• 2019

To overcome the theoretical efficiency of single-junction solar cells (> 30 %), tandem solar cells (or multi-junction solar cells) is considered as a strong nominee because of their excellent light utilization. Organic-inorganic halide perovskite has been regarded as a promising candidate material for next-generation tandem solar cell due to not only their excellent optoelectronic properties but also their bandgap-tune-ability and low-temperature process-possibility. As a result, they have been adopted either as a wide-bandgap top cell combined with narrow-bandgap silicon or CuIn_xGa_(1-x)Se₂ bottom cells or for all-perovskite tandem solar cells using narrow- and wide-bandgap perovskites. To successfully transition perovskite materials from for single junction to tandem, substantial efforts need to focus on fabricating the high quality wide- and narrow-bandgap perovskite materials and semi-transparent electrode/recombination layer. In this paper, we present an overview of the current research and our outlook regarding perovskite-based tandem solar technology. Several key challenges discussed are: 1) a wide-bandgap perovskite for top-cell in multi-junction tandem solar cells; 2) a narrow-bandgap perovskite for bottom-cell in all-perovskite tandem solar cells, and 3) suitable semi-transparent conducting layer for efficient electrode or recombination layer in tandem solar cells.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.1
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• pp.1-16
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• 2023

Recently, the shift to next-generation wide-bandgap (WBG) power semiconductor for electric vehicle is accelerated due to the need to improve power conversion efficiency and to overcome the limitation of conventional Si power semiconductor. With the adoption of WBG semiconductor, it is also required that the packaging materials for power modules have high temperature durability. As an alternative to conventional high-temperature Pb-based solder, Ag sintering die attach, which is one of the power module packaging process, is receiving attention. In this study, we will introduce the recent research trends on the Ag sintering die attach process. The effects of sintering parameters on the bonding properties and methodology on the exact physical properties of Ag sintered layer by the realization 3D image are discussed. In addition, trends in thermal shock and power cycle reliability test results for power module are discussed.

• Advances in nano research
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• v.1 no.3
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• pp.125-131
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• 2013

This study is aimed to calculate the radiative lifetime of Wannier-Mott excitons in nanoclusters of a narrow-bandgap semiconductor embedded in a wide-bandgap one. The nanocluster linear dimensions are assumed to be much larger than the radius of the exciton so that the latter is not destructed by the confinement potential as it takes place in small quantum dots. The calculations were carried out for an example of InAs nanoclusters put into the GaAs matrix. It is shown that the radiative lifetime of Wannier-Mott excitons in such clusters increases with the decrease of the cluster dimensions, this tendency being more pronounced at low temperatures. So, the creation of excitons in nanoclusters of a narrow-bandgap material embedded in a wide-bandgap one can be used to significantly prolong their radiative lifetime in comparison with that of excitons in a bulk semiconductor.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1447-1450
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• 2007

The electrical properties of organic lightemitting devices (OLEDs) with wide-bandgap impurity-doped emitting layers (EML) were investigated. While the luminous efficiency of OLEDs with a NPB or a DPVBi-doped $Alq_3$ EML did not vary significantly with the current density, that of the OLEDs with a BCP-doped $Alq_3$ EML changed dramatically.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2001.11a
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• pp.91-95
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• 2001

This paper presents that photonic bandgap structures suppressing the propagation of surface waves can improve the performance of the patch antennas on thick high dielectric constant substrate. The forbidden propagation of surface wave due to the photonic bandgap enhances the radiation efficiency and reduce the back radiation drastically with maintaining the small size and wide bandwidth of the antennas.

• 전기의세계
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• v.65 no.2
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• pp.15-26
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• 2016

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.1
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• pp.88-96
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• 2016

In this paper, the GaN FET based phase-shift full-bridge dc-dc converter design is implemented. Switch characteristics of GaN FET were analyzed in detail by comparing state-of-the-art Si MOSFET. Owing to the low conduction resistance and parasitic capacitance, it is expected to GaN FET based power conversion system has improved performance. However, GaN FET is vulnerable to electric interference due to the relatively low threshold voltage and fast switching transient. Therefore, it is necessary to consider PCB layout to design GaN FET based power system because PCB layout is the main reason of stray inductance. To reduce the electric noise, gate voltage of GaN FET is analyzed according to operation mode of phase-shift full-bridge dc-dc converter. Two 600W phase-shifted full-bridge dc-dc converter are designed based on the result to evaluate effects of stray inductance.

• Electronics and Telecommunications Trends
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• v.33 no.6
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• pp.12-23
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• 2018

In this paper, we review the technical trends of diamond and gallium oxide ($Ga_2O_3$) semiconductor technologies among ultra-wide bandgap semiconductor technologies for harsh environments. Diamond exhibits some of the most extreme physical properties such as a wide bandgap, high breakdown field, high electron mobility, and high thermal conductivity, yet its practical use in harsh environments has been limited owing to its scarcity, expense, and small-sized substrate. In addition, the difficulty of n-type doping through ion implantation into diamond is an obstacle to the normally-off operation of transistors. $Ga_2O_3$ also has material properties such as a wide bandgap, high breakdown field, and high working temperature superior to that of silicon, gallium arsenide, gallium nitride, silicon carbide, and so on. In addition, $Ga_2O_3$ bulk crystal growth has developed dramatically. Although the bulk growth is still relatively immature, a 2-inch substrate can already be purchased, whereas 4- and 6-inch substrates are currently under development. Owing to the rapid development of $Ga_2O_3$ bulk and epitaxy growth, device results have quickly followed. We look briefly into diamond and $Ga_2O_3$ semiconductor devices and epitaxy results that can be applied to harsh environments.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.11 no.8
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• pp.1544-1551
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• 2007

A start-up circuit of the bandgap reference voltage generator of cascode current mirror type with wide operating voltage range and enhanced power-up characteristics is proposed in the paper. It is confirmed by simulation that the newly proposed start-up circuit does not affect the operation of the bandgap reference voltage generatory even though the supply voltage(VDDA) is higher and has more stable power-up characteristic than the conventional start-up circuit. Test chips are designed and fabricated with $0.18{\mu}m$ tripple well CMOS process and their test has been completed. The mean value of measured the reference voltage(Vref) is 738mV and The three sigma value($3{\sigma}$) is 29.88mV.