• 제어로봇시스템학회:학술대회논문집
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• 2000.10a
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• pp.161-161
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• 2000

The clean mobile robot for wafer transfer is AGV that carry each wafer to each equipment. It has wafer handling technology, wafer ID recognition technology, position calibration technology using vision system, and anti-vibration technology. Wafer loading/unloading working accuracy is within ${\pm}$1mm, ${\pm}$3$^{\circ}$. By application of this AGV, we can reduce the manufacturing tack time and bring cost down of equipment.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.55 no.4
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• pp.167-175
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• 2006

This paper presents a method to segment semiconductor wafer ID on poor quality images. The method is based on multiple templates and normalized gray-level correlation (NGC) method. If the lighting condition is not so good and hence, we can not control the image quality, target image to be inspected presents poor quality ID and it is not easy to identify and then recognize the ID characters. Conventional several method to segment the interesting ID regions fails on the bad quality images. In this paper, we propose a multiple template method, which uses combinational relation of multiple templates from model templates to match several characters of the inspection images. To find out the optimal solution of multiple template model in ID regions, we introduce newly-developed snake algorithm. Experimental results using images from real FA environment are presented.

• Proceedings of the Korean Institute of Intelligent Systems Conference
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• 2004.10a
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• pp.549-552
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• 2004

본 논문에서는 반도체의 Wafer ID 문자인식을 위해 기존의 오류 역전파 학습알고리즘을 개선하여 최적의 학습 학습 조건에 관해 연구하였다. 결과, 오류 역전파 학습알고리즘의 학습 최적 조건은 은닉층수는 1층, n값은 0.6 이상, 은닉층 노드수는 10개일 때 99%의 높은 인식률을 보였다 본 논문에서 제안하는 최적조건물 사용함으로써 기존의 오류역전파 학습 알고리즘이 가진 문제점을 해결할 수 있었다.

• Proceedings of the Korean Information Science Society Conference
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• 2004.10a
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• pp.199-201
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• 2004

본 논문에서는 반도체의 Wafer ID 문자인식을 위해 기존의 오류 역전파 학습알고리즘을 개선하여 최적의 학습 조건에 관해 연구하였다. 결과, 오류 역전파 학습알고리즘의 학습 최적 조건은 은닉 층수는 1층, n값은 0.6 이상, 은닉층 노드수는 10개일 때 99%의 높은 인식률을 보였다. 본 논문에서 제안하는 최적조건을 사용함으로써 기존의 오류역전파 학습 알고리즘이 가진 문제점을 해결할 수 있었다.

• 제어로봇시스템학회:학술대회논문집
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• 2003.10a
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• pp.839-844
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• 2003

This paper presents a method to segment wafer ID marks on poor quality images under uncontrolled lighting conditions of the semiconductor process. The active multiple templates matching method is suggested to search ID areas on wafers and segment them into meaningful regions and it would have been impossible to recognize characters using general OCR algorithms. This active template model is designed by applying a snake model that is used for active contour tracking. Active multiple template model searches character areas and segments them into single characters optimally, tracking each character that can vary in a flexible manner according to string configurations. Applying active multiple templates, the optimization of the snake energy is done using Greedy algorithm, to maximize its efficiency by automatically controlling each template gap. These vary according to the configuration of character string. Experimental results using wafer images from real FA environment are presented.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2007.11a
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• pp.164-165
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• 2007

Si(중간층)/DLC(diamond-like carbon)막은 스퍼터와 이온소스(ion source)법에 의한 복합방식(hybrid method)을 이용하여 3mTorr의 반응가스 벤젠($C_6H_6$)분위기에서 Si wafer에 기판온도 $130^{\circ}C$로 180분간 증착하였다. 평가는 표면과 단면에 대해 주사전자현미경(scanning electron microscopy, SEM)과 투자전자현미경(trasmission electron microsope, TEM)으로 관찰하였다. 경도와 마찰계수는 나노인텐터(nanoindetor)와 마모시험기를 이용하였으며, 박막의 구조는 라만스펙트럼으로 분석하였다. 그 결과 박막의 두께는 약 $0.9{\mu}m$, 표면조도는 약 $0.34{\sim}1.64nm$로 평탄한 표면을 가지며 경도는 약 $35{\sim}37GPa$, 마찰계수는 약 $0.02{\sim}0.07$로 관찰되었다. 라만분광법과 전자회절패턴에 의해 IG/ID의 함량비는 $0.54{\sim}0.59$로 $sp^2$와 $sp^3$가 혼재된 전형적인 비정질 구조임을 확인하였다.

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.173-178
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• 2009

DLC film was synthesized on plastic injection mold(SKD11, $30\;mm\;{\times}\;19\;mm\;{\times}\;0.5\;mm$) and Si(100) wafer for 2 h at $130^{\circ}C$ under 6 mTorr using hybrid method of rf sputtering and ion source. The obtained film was analysed by Raman spectroscopy, AFM, TEM, Nano indenter and scratch tester, etc. The film was defined as an amorphous phase. In the Raman spectrum, broad peak of $sp^2$-bonded carbon attributed to graphite at $1550\;cm^{-1}$ were observed, and the ratio of ID($sp^3$ diamond intensity)/IG($sp^2$ graphite intensity) was approximately 0.54. The adhesion of DLC film was more than 80 N with scratch tester when $0.2\;{\mu}m$ thickness Cr was coated as interlayer. The micro-hardness was distributed at 35~37 GPa. The friction coefficient was 0.02~0.07, and surface roughness(Ra) was 0.34~1.64 nm. The lifetime of DLC coated plastic injection mold using as a connector part in computer was more than 2 times of non-coated mold.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.