• 제목/요약/키워드: vpp

검색결과 132건 처리시간 0.034초

Experimental Study on the Hydrodynamic Forces of 30 Feet Sailing Yacht (30피트급 요트의 유체력에 대한 실험적 연구)

  • Yoo, Jae-Hoon;Ahn, Hae-Seong
    • Journal of the Society of Naval Architects of Korea
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    • 제42권3호
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    • pp.233-240
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    • 2005
  • A model test was carried out, in order to verify the hydrodynamic performances of public 30 feet class sailing yacht. In the initial design stage, the performances and the running attitude of sail yacht including the hull form and sail plan, appendages were estimated by VPP, from which made the representative test conditions. A new experiment system such as captive model device was composed because the running attitude could be changed by wind conditions. The test results show that the minimum resistance is generated in the heeling 20 degree, which was expected in the initial design stage. It is thought to be the useful informations that the keel has au effects on hydrodynamic forces and resistance differences between the upwind and the downwind condition.

Preparation of PEDOT-TiO2 Composite Thin Film by Using Simultaneous Vapor Phase Polymerization (동시-기상중합법을 이용한 Poly(3,4-ethylenedioxythiophene)(PEDOT)-TiO2 하이브리드 박막 제조)

  • Ko, Young Soo;Han, Yong-Hyeon;Yim, Jin-Heong
    • Polymer(Korea)
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    • 제38권4호
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    • pp.525-529
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    • 2014
  • PEDOT-$TiO_2$ hybrid conductive thin film including semiconductive metal oxide was successfully prepared via simultaneous vapor phase polymerization (VPP). The mechanical properties such as pencil hardness and anti-scratch property as well as optoelectrical properties of PEDOT-$TiO_2$ hybrid thin film could be improved as compared with pristine PEDOT thin film. Physicochemically stable crosslinked $TiO_2$ layer derived from a sol-gel process by FTS was generated in the PEDOT thin film layer by simultaneous VPP, resulting in improving mechanical properties of the hybrid thin films without any deterioration of their original optoelectrical properties. PEDOT-$TiO_2$ hybrid thin film showed better electrical conductivity as compared with PEDOT film. It might be due to the fact that the surface morphology of hybrid thin film prepared by simultaneous VPP showed smoother than that of pristine PEDOT thin film.

Design of an 8-Bit eFuse One-Time Programmable Memory IP Using an External Voltage (외부프로그램 전압을 이용한 8비트 eFuse OTP IP 설계)

  • Cho, Gyu-Sam;Jin, Mei-Ying;Kang, Min-Cheol;Jang, Ji-Hye;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • 제14권1호
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    • pp.183-190
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    • 2010
  • We propose an eFuse one-time programmable (OTP) memory cell based on a logic process, which is programmable by an external program voltage. For the conventional eFuse OTP memory cell, a program datum is provided with the SL (Source Line) connected to the anode of the eFuse going through a voltage drop of the SL driving circuit. In contrast, the gate of the NMOS program transistor is provided with a program datum and the anode of the eFuse with an external program voltage (FSOURCE) of 3.8V without any voltage drop for the newly proposed eFuse cell. The FSOURCE voltage of the proposed cell keeps either 0V or the floating state at read mode. We propose a clamp circuit for being biased to 0V when the voltage of FSOURCE is in the floating state. In addition, we propose a VPP switching circuit switching between the logic VDD (=1.8V) and the FSOURCE voltage. The layout size of the designed eFuse OTP memory IP with Dongbu HiTek's $0.15{\mu}m$ generic process is $359.92{\times}90.98{\mu}m^2$.

Design of logic process based 256-bit EEPROM IP for RFID Tag Chips and Its Measurements (RFID 태그 칩용 로직 공정 기반 256bit EEPROM IP 설계 및 측정)

  • Kim, Kwang-Il;Jin, Li-Yan;Jeon, Hwang-Gon;Kim, Ki-Jong;Lee, Jae-Hyung;Kim, Tae-Hoon;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • 제14권8호
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    • pp.1868-1876
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    • 2010
  • In this paper, we design a 256-bit EEPROM IP using only logic process-based devices. We propose EEPROM core circuits, a control gate (CG) and a tunnel gate (TG) driving circuit, to limit the voltages between the devices within 5.5V; and we propose DC-DC converters : VPP (=+4.75V), VNN (-4.75V), and VNNL (=VNN/3) generation circuit. In addition, we propose switching powers, CG_HV, CG_LV, TG_HV, TG_LV, VNNL_CG, VNNL_TG switching circuit, to be supplied for the CG and TG driving circuit. Simulation results under the typical simulation condition show that the power consumptions in the read, erase, and program mode are $12.86{\mu}W$, $22.52{\mu}W$, and $22.58{\mu}W$ respectively. Furthermore, the manufactured test chip operated normally and generated its target voltages of VPP, VNN, and VNNL as 4.69V, -4.74V, and -1.89V.

Study on Poly(3,4-ethylenedioxythiophene) Thin Film Vapour Phase-Polymerized with Iron(III)Tosylate on High Quality 3-Aminopropyltriethoxysilane Self-Assembled Monolayer

  • Choi, Sangil;Kim, Wondae;Cho, Sung Jun;Kim, Sungsoo
    • Journal of Integrative Natural Science
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    • 제5권4호
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    • pp.237-240
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    • 2012
  • In this study, PEDOT thin films polymerized with Iron(III)tosylate ($Fe(PTS)_3$) and grown on atomically smooth and highly dense 3-aminopropyltriethoxysilane self-assembled monolayer (APS-SAM) surfaces by VPP method have been investigated. PEDOT thin films were synthesized on APS self-assembled $SiO_2$ wafer surface at two different concentrations (20 wt% and 40 wt%) and growth time (3 and 30 minutes), and then their sheet resistance were measured and compared. PEDOT thin films grown with 20 wt% $Fe(PTS)_3$ oxidant are highly conductive when compared with the film grown with 40 wt% $Fe(PTS)_3$, as ascertained by the measured sheet resistance values down to 0.06 ${\Omega}/cm$. It clearly suggests that 20 wt% is more effective oxidant concentration for VPP than 40 wt% even though the film grown with 40 wt% oxidant has better quality than the film with 20 wt% $Fe(PTS)_3$ does.

A 13.56 MHz CMOS Multi-Stage Rectifier for Wireless Power Transfer in Biomedical Applications (바이오응용 무선전력전달을 위한 13.56 MHz CMOS 다단 정류기)

  • Cha, Hyouk-Kyu
    • Journal of the Institute of Electronics and Information Engineers
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    • 제50권3호
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    • pp.35-41
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    • 2013
  • An efficient multi-stage rectifier for wireless power transfer in deep implant medical devices is implemented using $0.18-{\mu}m$ CMOS technology. The presented three-stage rectifier employs a cross-coupled topology to boost a small input AC signal from the external device to produce a 1.2-1.5 V output DC signal for the implant device. The designed rectifier achieves a maximum measured power conversion efficiency of 70% at 13.56 MHz under the conditions of a low 0.6-Vpp RF input signal with a $10-k{\Omega}$ output load resistance.

A Study on the Participation of Virtual Power Plant Based Technology Utilizing Distributed Generation Resources in Electricity Market (분산발전자원을 활용한 가상발전소 기반 기술의 전력시장 참여 방안에 대한 연구)

  • Lee, Yun-Hwan
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • 제65권2호
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    • pp.94-100
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    • 2016
  • A virtual power plant (VPP) technology is a cluster of distributed generation installations. VPP system is that integrates several types of distributed generation sources, so as to give a reliable overall power supply. Virtual power plant systems play a key role in the smart grids concept and the move towards alternative sources of energy. They ensure improved integration of the renewable energy generation into the grids and the electricity market. VPPs not only deal with the supply side, but also help manage demand and ensure reliability of grid functions through demand response (DR) and other load shifting approaches in real time. In this paper, utilizing a variety of distributed generation resources(such as emergency generator, commercial generator, energy storage device), activation scheme of the virtual power plant technology. In addition, through the analysis of the domestic electricity market, it describes a scheme that can be a virtual power plant to participate in electricity market. It attempts to derive the policy support recommendation in order to obtain the basics to the prepared in position of power generation companies for the commercialization of virtual power plant.

Porous Silicon : Applications of Chemical Sensors (다공질 실리콘 : 화학 센서로써의 응용)

  • Kang, Chul-Goo;Kang, Moon-Sik;Jin, Joon-Hyung;Yoo, Jae-Tack;Hong, Suk-In;Min, Nam-Ki
    • Proceedings of the KIEE Conference
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    • 대한전기학회 2002년도 하계학술대회 논문집 C
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    • pp.1581-1583
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    • 2002
  • 본 논문은 다공질 실리콘 다이어프램에 대한 화학 센서의 일종인 습도, 에탄올, 메탄올의 감지 특성을 측정하고 전기 전도도의 변화를 고찰하였다. 먼저, TMAH 용액으로 실리콘 다이어프램을 제작한 후, HF와 에탄올의 혼합 용액내에서 일정 전압을 인가하여 다공질 실리콘 다이어프램을 형성하였다. 다공질 실리콘을 면(100)에 수직한 방향으로 $50{\sim}100{\mu}m$ 두께로 균일하게 형성하여 p+-PSi-n+ 구조의 소자를 제작하였다. 다공질 실리콘 다이어프램의 절대습도에 대한 감도는 입력 주파수 5kHz에서 인가 전압이 $2{\sim}6$Vpp에서 $376.3{\sim}784.8{\Omega}$/%RH으로 변하였다. 또, 인가 전압 6Vpp에서 입력 주파수가 $2{\sim}5$kHz으로 변할 때 $393.3{\sim}784.8{\Omega}$/%RH으로 변하였다. 또한, 에탄올에 대한 감도는 $0.068{\mu}A$/%이며, 메탄올은 $0.212{\mu}A$/%으로 다공질 실리콘 다이어프램은 에탄올 보다 메탄올이 더 민감하게 반응하였다. 일반적으로 다공질 실리콘의 전기전도도는 charged surface traps과 screening effect에 의존한다.

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