• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.1189-1192
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• 2003

본 논문에서는 노이즈를 고려한 PLL를 설계하였다. 30Mhz∼300Mhz으로 동작하는 VCO를 설계하였다. VCO를 평균 250Mhz으로 동작하도록 하고 reference 주파수, 62.5Mhz로 locking하는 PLL를 설계를 하였다. 300Mhz PLL의 기본적인 구조로 PLL은 PFD(Phase frequency detector), CP(Charge Pump), LF(Loop filter), VCO(Voltage controlled Oscillator)와 Divider로 구성되었다. PFD과 CP는 Dead Zone를 줄이고, 큰 gm를 가지도록 설계를 하였다. PLL에서 가장 중요한 블락인, VCO는 One Chip으로 설계하기 위해 Ring Oscillator로 설계를 하였다. 2.5V 62.5MHZ의 외부 신호를 300MHZ을 발진하는 VCO에서 분주하여 clock synthesizer를 설계하였다. 본 논문은 Hynix0.25공정을 사용하여 설계를 하였으며, 2.5V의 공급 전원을 사용하였다.

• Journal of the Korea Society of Computer and Information
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• v.7 no.3
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• pp.109-114
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• 2002

This thesis analysed the characteristics of the performance degradation due to the bias resistance on the existing Colpitts VCO and Proposed the new structure of bias which removed the effect of bias resister to degrade the performance of oscillator. Also, we designed and implemented the high efficiency and low power VCO for International Mobile Telecommunication by using this technique.

• The Journal of the Korea institute of electronic communication sciences
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• v.6 no.1
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• pp.7-12
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• 2011

This paper proposes a differential Colpitts-VCO circuit suitable for low phase noise oscillation at the sub-1V supply voltage. Oscillation with low phase noise at the sub-1V supply voltage is facilitated by employing inductors as the current sources of the proposed circuit. One of the two feedback capacitors of the single-ended Colpitts oscillator in the proposed circuit is replaced with the MOS varactor in order to further reduce the resonator loss. Post-layout simulation results using a $0.18{\mu}m$ RF CMOS technology show that the phase noises at the 1MHz offset frequency of the proposed circuit oscillating at the sub-1V supply voltages of 0.6 to 0.9 V are at least 7 dBc/Hz lower than those of the well-known cross-coupled differential VCO.

• Proceedings of the KIEE Conference
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• 2001.11a
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• pp.96-99
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• 2001

In this paper, we present the simulation results of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonator, the oscillator and the buffer circuit. using EM simulator and nonlinear RF circuit simulator. EM simulator is used for obtaining the EM(Electromagnetic) characteristics of the conductor pattern as well as designing the multi-layer VCO. Obtained EM characteristics were used as real components in nonlinear RF circuit simulation. Finally the overall VCO was simulated using the nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont 951AT, which will be applied for LTCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 4.5[dBm], the phase noise was -104[dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of 9.5[mA]. The size of VCO is $6{\times}9{\times}2mm$(0.11[cc]).

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.2
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• pp.139-145
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• 2024

This paper presents the design of a voltage controlled oscillator (VCO) which is one of the key building blocks in modern wireless communication systems with small VCO gain (K_vco) variation. To compensate conventional large K_vco variation, a series varactor bank has been added to the conventional LC-tank with parallel capacitor bank array. And also, in order to achieve excellent phase noise performance while maintaining wide tuning range, a mixed coarse/fine tuning scheme(series varactor array and parallel capacitor array) is chosen. The switched varactor array bank is controlled by the same digital code for switched capacitor array without additional digital circuits. For use at a low voltage of 1.2V, the proposed current reference circuit in this paper used a current reference circuit for safety with the common gate removed more safely. Implemented in a TSMC 0.13㎛ CMOS RF technology, the proposed VCO can be tuned from 4.4GH to 5.3GHz with the K_vco (VCO gain ) variation of less than 9.6%. While consuming 3.1mA from a 1.2V supply, the VCO has -120dBc/Hz phase noise at 1MHz offset from the carrier of the 5.3 GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.21 no.3
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• pp.763-770
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• 1996

In this paper, the Single-stage Transmission type Injectiong-Locked Oscillator(STILO) was designed and fabicated for the Active Integrated Phased Array Antenna(AIPAA) system. The STILO, which was designed and fabricated by injection-locked technique and hair-pin resonator, has the same 210MHz frequency tuning range of the Voltage Controlled Oscillator(VCO) used by varactor. The locking bandwidth of STILO with 11.5MHz bandwidth, is much better than that of the Injection-Locked Dielectric Resonator Oscillator(ILDRO), And the STILO has the improved noise characteristics in AM, FM, and PM. This STILO is useful for the AIPAA, the coupled VCO array, an the MMIC structure.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.2
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• pp.202-207
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• 2010

In this paper, a novel voltage-controlled oscillator(VCO) using the open loop multiple split ring resonator(OLMSRR) is presented for improving the phase noise, implemented in 130 nm CMOS technology. Compared with the conventional CMOS LC resonator, the proposed CMOS OLMSRR has the larger coupling coefficient value, which makes a higher Q-factor, and has improved the phase noise of the VCO. The proposed CMOS VCO based OLMSRR has the phase noise of -99.67 dBc/Hz @ 1 MHz in the oscillation frequency. Compared with the VCO using the conventional CMOS LC resonator and the proposed VCO using the CMOS OLMSRR structure has been improved in 7 dB. The prototype 24 GHz CMOS VCO is implemented in 130 nm CMOS and occupies a compact die area of $0.7\;mm{\times}0.9\;mm$.

• Proceedings of the Korea Electromagnetic Engineering Society Conference
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• 2002.11a
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• pp.21-24
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• 2002

This paper presents a fully integrated, wide tuning range differential CMOS voltage-controlled oscillator, tuned by pMOS-varactors. VCO utilizing a novel tuning scheme is reported. Both coarse digital tuning and fine analog tuning are achieved using pMOS-varactors. The VCO were implemented in a 0.18-fm standard CMOS process. The VCO tuned from 1.8㎓ to 2.55㎓ through 2-bit digital and analog input. At 1.8V power supply voltage and a total power dissipation of 8mW, the VCO features a phase noise of -126㏈c/㎐ at 3㎒ frequency offset.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.410-413
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• 2001

In this paper, we present results of this that design of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonation circuit and the oscillation circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for acquiring EM(Electromagnetic) characteristics of conductor pattern as well as designing multi-layer VCO, Acquired EM characteristics of the circuit pattern was used like real components at nonlinear RF circuit simulator. Finally VCO is simulated at nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont #9599, which is applied for L TCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 1[dBm], the phase noise was 102 [dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of l0[mA]

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.410-413
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• 2001

In this paper, we present results of this that design of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonation circuit and the oscillation circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for acquiring EM(Electromagnetic) characteristics of conductor pattern as well as designing multi-layer VCO, Acquired EM characteristics of the circuit pattern was used like real components at nonlinear RF circuit simulator. Finally VCO is simulated at nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was Dupont ＃9599, which is applied for LTCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 1[dBm], the phase noise was 102 [dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of 10[mA].