• Korean Journal of Optics and Photonics
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• v.14 no.1
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• pp.12-16
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• 2003

This paper presents a compensation method for a temperature-dependent gain tilt in L-band erbium-doped fiber amplifier using a voltage-controlled attenuator. The gain tilts in the L-band of 1570-1605 nm due to a temperature change have negative slopes, whereas they have positive slopes for the increasing optical input powers in a saturation region. The proposed method utilizes these opposite gain variations to compensate for the gain tilt over a wide range of temperature. While applying forty channels with a channel spacing of 100 GHz in the L-band and changing the ambient temperature from 0 to $50^{\circ}C$, the compensation method maintained the gain deviation within 1 dB.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.2
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• pp.127-132
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• 2003

This paper presents a new model that can precisely simulate the attenuation characteristics of the voltage-controlled PIN diode attenuators. After carefully investigating the problems in the conventional PIN diode models, a new PIN diode model was proposed and verified with experimental data. The proposed model is well operated when it is used in the voltage-controlled mode as well as current-controlled mode, and is simple and straightforward model, since the PN junction diode of this model has the same curve as that of the PIN diode. This model is very effective to design voltage-controlled attenuator and its implementation in commercial simulators is simple and accurate. This model will allow RF and Microwave designers to better use the PIN diodes in various circuits.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.10
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• pp.2066-2070
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• 2009

A voltage controlled attenuator using a PIN diode and two resistors of the $\pi$-type fixed attenuator is described in this paper. The proposed variable attenuator operating for a fixed attenuation range has a good input VSWR and a low intermodulation signal. For the low phase shift, a PIN diode is connected with open stub for the purpose of phase compensation. The stub for phase compensation is calculated by the Deloach method and the related circuit theory. This attenuator is easily fabricated on the microstrip and can be normally used in fine control circuits within small attenuation range. The fabricated attenuator for 2110~2170 MHz frequency band has about 4 dB of an attenuation range, $2^{\circ}$ of phase variance, and -20 dB of S11 according to the input voltage from 0 to 2.7 V.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.4A
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• pp.458-465
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• 2004

To reaffirm the use of a mainstream CMOS process for designing passive-like attenuator structures, a linearly controlled variable attenuator is realized with 0.35${\mu}{\textrm}{m}$ 2-poly 4-metal CMOS process. It uses the П configuration for large attenuation range and suitable matching property. Compared to conventional passive-like CMOS attenuators, it is demonstrated that this work advances the frequency band from MHz to ㎓ (DC- l㎓), and reduces the size to 700${\mu}{\textrm}{m}$${\times}$300${\mu}{\textrm}{m}$.. Both simulation results and test results are provided. They show the improved linear relation between attenuation and control voltage. It is very useful in CDMA or GSM band, which uses under 1㎓ frequency band. An alternative topology, Bridged-T configuration, is proposed to get over the limit of applications by elevating operation bandwidth. The proposed topology covers over DC-2㎓ frequency band, which means that the proposed architecture can cover the tripleband (800MHz CDMA/GSM, 1.5㎓ GPS, 1.9㎓z PCS system) in applications as well. The simulation results are provided.

• Journal of Advanced Navigation Technology
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• v.13 no.3
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• pp.399-405
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• 2009

This paper proposes a design of attenuator based on meta-material structure and its application. The unit-cell attenuator based on the lossy transmission line consists of the CRLH(Composite Right/Left Handed) transmission line and PIN diodes to be controlled internal loss according to diode bias voltage to change resistance of diode. Also, to reduce the initial losses, there is used parallel connection of PIN diodes. To increase attenuations, it is connected a cascade unit-cell of attenuator with periodic structure. The attenuation quantities of unit-cell are about 10dB and phase variations are 15o maximum at 1.5 GHz ~ 2.5 GHz. Also, its application is represented a vector modulator.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.5
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• pp.484-491
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• 2002

This paper presents the results of a study of voltage-controlled PIN diode attenuators for Ku-band satellite payload and suggests the temperature-compensation method of these attenuators. The PIN diode attenuators are designed using thin-film hybrid techniques. The load resistance for maximum linear characteristics is determined by simulation and measurements. In the case of APD0805, load resistance of 150 $\Omega$ gives attenuator up to 10 dB linear attenuation range per a PIN diode. Also, measurements over temperature of these PIN diode attenuators were performed. From these measurements, designed PIN diode attenuators shows the severe temperature dependency due to forward voltage variation. A temperature compensation method using thermistor is now suggested to compensate the temperature variation of these PIN diode attenuators. This circuit shows good linear characteristics over wide temperature range