• Journal of the Korean earth science society
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• v.28 no.1
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• pp.64-74
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• 2007

The marine seismic prospecting using a research vessel in the shallow sea near the coastal area has certain limits according to the water depth and survey environment. Also, for the electrical resistivity survey at seashore area, one may need a specially designed high-voltage source to penetrate the very conductive surface layer. Therefore, we have conducted a feasibility study on the application of magnetotelluric method (MT), a passive geophysical method, on investigating of shallow marine environment geology. Our study involves both theoretical modeling and field survey at the tidal flat area which represent the very shallow marine environment. We have applied the audio-frequency magnetotelluric (AMT) method to the intertidal deposits of Gunhung Bay, west coast of Korea, and analysed the field data both qualitatively and quantitatively to investigate the morphology and sedimentary stratigraphy of the tidal flat. The inversion of AMT data well reveals the upper sedimentary layer of Holocene intertidal sediments having a range of 13-20 m thickness and the erosional patterns at the unconformable contact boundary. However, the AMT inversion results tend to overestimate the depth of basement (30-50 m) when compared with the seismic section (27-33 m). Since MT responses are not significantly sensitive to the resistivity of middle layer or the depth of basement, the AMT inversion result for basement may have to be adjusted using the comparison with other geophysical information like seismic section or logging data if possible. But, the AMT method can be an effective alternative choice for investigating the seashore area to get important basic informations such as the depositional environment of the tidal flat, sea-water intrusion and the basement structure near the sea shore.

• Applied Microscopy
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• v.40 no.4
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• pp.261-266
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• 2010

ATP is the energy source synthesized at the electron transferase that consist of complex I, II, III, IV and V in mitochondrial cristae. The complex V functions as ATPase which composed of sub-complex $F_0$ and $F_1$. Porin or VDAC (voltagedependent anion-selective channel), is a family of small pore-forming proteins of the mitochondrial outer membrane, and play important roles in the regulated flux of anion, proton and metabolites between the cytosolic and mitochondrial compartments. The channel allows the diffusion of negatively charged solutes such as succinate, malate, and ATP in the fully open state, but of positively charged ions in subconducting state. In this study, in order to investigate the relationship of the function and localization between porin and ATPase we observed the distribution of porin and ATPase in the mitochondria of the bovine heart. Monoclonal antibodies against porin and ATPase ${\beta}$-subunit were used to detect porin and ATPase using light microscope with immunohistochemistry and immunofluorescence, and using electron microscope with immunogold-labeling. ATPase were stained in longitudinal section region in cardiac muscle, porin were stained in longitudinal section region in cardiac muscle. We viewed more specific pattern of localization and distribution of these proteins using immunofluorescence method. There were some region which were labeled with porin or ATPase respectively, and others which were labeled both proteins in cardiac muscle. The electron microscope results showed that immunogold labeled porin were labeled locally at mitochondrial outer membrane and ATPase were labeled evenly at mitochondrial cristae. But ATPase was not labeled at mitochondria cristae. These results confirmed the subcellular localizations of porin and ATPase in mitochondrial outer membrane and cristae. Also, we assumed that ATP synthesis always does not activation in all mitochondria exist in the bovine cardiac muscle.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.6
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• pp.1-6
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• 2011

A transparent oxide thin film transistors (Transparent Oxide-TFT) have been fabricated by RF magnetron sputtering at room temperature using amorphous indium zinc oxide (a-IZO) as both of active channel and source/drain, gate electrodes and co-sputtered $HfO_2-Al_2O_3$ (HfAIO) as gate dielectric. In spite of its high dielectric constant > 20), $HfO_2$ has some drawbacks including high leakage current and rough surface morphologies originated from small energy band gap (5.31eV) and microcrystalline structure. In this work, the incorporation of $Al_2O_3$ into $HfO_2$ was obtained by co-sputtering of $HfO_2$ and $Al_2O_3$ without any intentional substrate heating and its structural and electrical properties were investigated by x-ray diffraction (XRD), atomic force microscopy (AFM) and spectroscopic ellipsometer (SE) analyses. The XRD studies confirmed that the microcrystalline structures of $HfO_2$ were transformed to amorphous structures of HfAIO. By AFM analysis, HfAIO films (0.490nm) were considerably smoother than $HfO_2$ films (2.979nm) due to their amorphous structure. The energy band gap ($E_g$) deduced by spectroscopic ellipsometer was increased from 5.17eV ($HfO_2$) to 5.42eV (HfAIO). The electrical performances of TFTs which are made of well-controlled active/electrode IZO materials and co-sputtered HfAIO dielectric material, exhibited a field effect mobility of more than $10cm^2/V{\cdot}s$, a threshold voltage of ~2 V, an $I_{on/off}$ ratio of > $10^5$, and a max on-current of > 2 mA.

• Journal of the Korean Society for Nondestructive Testing
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• v.26 no.4
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• pp.211-219
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• 2006

The UET(ultrasound excited thermography) for the ,eat-time diagnostics of the object employs an infrared camera to image defects of the surface and subsurface which are locally heated using high-frequency putted ultrasonic excitation. The dissipation of high-power ultrasonic energy around the feces of the defects causes an increase In temperature. The defect's image appears as a hot spot (bright IR source) within a dark background field. The UET for nondestructive diagnostic and evaluation is based on the image analysis of the hot spot as a local response to ultrasonic excited heat deposition. In this paper the applicability of VET for fast imaging of defect is described. The ultrasonic energy is injected into the sample through a transducer in the vertical and horizontal directions respectively. The voltage applied to the transducer is measured by digital oscilloscope, and the waveform are compared. Measurements were performed on four kinds of materials: SUS fatigue crack specimen(thickness 14mm), PCB plate(1.8 mm), CFRP plate(3 mm) and Inconel 600 plate (1 mm). A high power ultrasonic energy with pulse durations of 250ms Is injected into the samples in the horizontal and vertical directions respectively The obtained experimental result reveals that the dissipation loss of the ultrasonic energy In the vertical injection is less than that in the horizontal direction. In the cafe or PCB, CFRP, the size of hot spot in the vortical injection if larger than that in horizontal direction. Duration time of the hot spot in the vertical direction is three times as long as that in the horizontal direction. In the case of Inconel 600 plate and SUS sample, the hot spot in the horizontal injection was detected faster than that in the vertical direction

• Fire Science and Engineering
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• v.31 no.5
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• pp.53-62
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• 2017

Electric power which is the energy source of economy and industries requires long distance transportation due to regional difference between its production and consumption, and it is supplied through the multi-loop transmission and distribution system. Prior to its actual use, electric power flows through several transformations by voltage transformers in substations depending on the characteristics of each usage, and a transformer has the structure consisting of the main body, winding wire, insulating oil and bushings. A transformer fire that breaks out in substations entails the primary damage that interrupts the power supply to houses and commercial facilities and causes various safety accidents as well as the secondary economic losses. It is considered that causes of such fire include the leak of insulating oil resulting from the destruction of bottom part of bushings, and the chain reaction of fire due to insulating oil that reaches its ignition point within 1 second. The smoke detector and automatic fire extinguishing system are established in order to minimize fire damage, but a difficulty in securing golden time for extinguishing fire due to delay in the operation of detector and release of gas from the extinguishing system has become a problem. Accordingly, this study was carried out according to needs of active mechanism to prevent the spread of fire and block the leak of insulating oil, in accordance with the importance of securing golden time in extinguishing a fire in its early stage. A bushings fireproof structure was developed by applying the high temperature shape retention materials, which are expanded by flame, and mechanical flame cutoff devices. The bushings fireproof structure was installed on the transformer model produced by applying the actual standards of bushings and flange, and the full scale fire test was carried out. It was confirmed that the bushings fireproof structure operated at accurate position and height within 3 seconds from the flame initiation. It is considered that it could block the spread of flame effectively in the event of actual transformer fire.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.