• 한국전기전자재료학회논문지
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• 제17권10호
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• pp.1034-1040
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• 2004

The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.

• 반도체디스플레이기술학회지
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• 제19권1호
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• pp.49-54
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• 2020

The voltage drop due to the thin cathode film at the large size top emission OLED panel was successfully compensated with making electrical contact between thin cathode and anode auxiliary electrode by 355nm wavelength of laser. It was found that the luminance uniformity dramatically increased from around 15% to more than 80% through this electrical compensation between thin cathode and anode auxiliary electrode. Moreover, the removing process for EL materials on the anode auxiliary electrode process by laser was very reliable and stable. Therefore, it is thought that the EL removal method using laser to make electrical contacts is very appropriate to mass production for such a large size top emission OLEDs to obtain high uniformity of luminance.

• 전기학회논문지
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• 제65권5호
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• pp.883-887
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• 2016

The power supply system in Korean electrified railway has adopted AT feeding. If a fault occurs in some substation for any reason, the vicinity substation must feed electric power on the outage substation through catenary. So, the feeding distance grows twice of the normal state at extended feeding condition. If substation's feeding distance is longer than normal condition, the catenary impedance and train to supply electric power from the substation. Therefore, the severe voltage drop can occur and power supply shall be not allowed. This paper presents the model of compensator against voltage drop using multi-port network algorithm. Whole traction power supply system can be analyzed with this model. Computer simulation including this model is performed based on real train schedule and increased schedule in case studies.

• 한국전기전자재료학회논문지
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• 제29권9호
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• pp.523-526
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• 2016

This paper was researched about 1,200 V level floating island IGBT (insulated gate bipolar transistor). Presently, 1,200 V level IGBT is used in Inverter for distributed power generation. We analyzed and compared electrical charateristics of the proposed floating island IGBT and conventional IGBT. For analyzing and comparison, we used T-CAD tool and simulated the electrical charateristics of the devices. And we extracted optimal design and process parameter of the devices. As a result of experiments, we obtained 1,456 V and 1,459 V of breakdown voltages, respectively. And we obatined 4.06 V and 4.09 V of threshold voltages, respectively. On the other hand, on-state voltage drop of floating island IGBT was 3.75 V. but on-state vlotage drop of the conventional IGBT was 4.65 V. Therefore, we almost knew that the proposed floating island IGBT was superior than the conventional IGBT in terms of power dissipation.

• 전기학회논문지
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• 제67권12호
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• pp.1723-1728
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• 2018

In order to investigate the voltage drop compensation effect of AT for domestic railway vehicle base, the parameters of AT voltage drop of railroad car base are Z3 (Impedance of feeder line), Xn ( Distance from railroad vehicle to AT to SS), and Dn (distance between both ATs of railway vehicle).In addition, when installed in a SSP for a railway vehicle base, there is no AT and feeder line in the railway vehicle base except for the SSP for the main line and the SSP for the railway vehicle base, so that if zero or ignored, the AC single-phase two- It can be confirmed that it becomes a form.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1176-1178
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• 2007

A novel integrated a-Si:H gate driver with high reliability has been designed and simulated. Since the a-Si:H TFT is easily degraded by gate bias stress, we should optimize the circuit considering the threshold voltage shift. The conventional circuit shows voltage drop at the input stage by threshold voltage of the TFT, however, the proposed circuit dose not shows voltage drop and keeps constant regardless of threshold voltage shift of the TFT.

• 산업기술연구
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• 제28권B호
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• pp.167-174
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• 2008

In this paper, the analysis on type effect of inverter output voltage distortion on the control of an induction motor is discussed. The inverter output voltage is distorted differently from the reference voltage owing to the inverter nonlinear characteristic. The inverter nonlinear characteristic results from the voltage drop, the inherent characteristic of the power semiconductor, and the dead time for preventing the short circuit of the inverter leg. This characteristic distorts the inverter output voltage and then, causes the motor flux estimation error. Although this characteristics do not significantly effect in the general-purpose induction motor control, but significantly effect on the low-speed operation of high performance motor control such as the sensorless vector control.

• 전기전자학회논문지
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• 제11권4호
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• pp.247-251
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• 2007

The recessed gate IGBT has a lower on-state voltage drop compared with the DMOS IGBT, because there is no JFET resistance. But because of the electric field concentration in the corner of the gate edge, the breakdown voltage decreases. This paper is about the new structure to effectively improve the Vce(sat) voltage without breakdown voltage drop in 1700V NPT type recessed gate IGBT with p floating shielding layer. For the fabrication of the recessed gate IGBT with p floating shielding layer, it is necessary to perform the only one implant step for the shielding layer. Analysis on the Breakdown voltage shows the improved values compared to the conventional recessed gate IGBT structures. The result shows the improvement on Breakdown voltage without worsening other characteristics of the device. The electrical characteristics were studied by MEDICI simulation results.

• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.263-267
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• 2016

In this paper, we analyzed the electrical characteristics of NPT planar and trench gate IGBT after designing these devices according to design and process parameter. To begin with, we have designed NPT planar gate IGBT and carried out simulation with T-CAD. Therefore, we extracted design and process parameter and obtained optimal electrical characteristics. The breakdown voltage was 724 V and The on state voltage drop was 1.746 V. The next was carried out optimal design of trench gate power IGBT. We did this research by same drift thickness and resistivity of planar gate power IGBT. As a result of experiment, we obtain 720 V breakdown voltage, 1.32 V on state voltage drop and 4.077 V threshold voltage. These results were improved performance and fabrication of trench gate power IGBT and planar gate Power IGBT.

• 한국대기환경학회지
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• 제16권2호
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• pp.179-190
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• 2000

The main object of this study was to investigate experimentally the characteristics of electrostatic cyclone-bag filter with upper tangential inlet in order to overcome the low collection efficiency for the submicron particle and high pressure drop which were main problems of general fabric bag filters. The experiment was carried out for the analysis of collection efficiency and pressure drop of electrostatic cyclone-bag filter comparing to those of fabric bag filter with various experimental parameters such as the inlet velocity(filtration velocity) and applied voltage etc. In the results the upper tangential inlet type showed higher collection efficiency for submicron particles below 2 ${\mu}{\textrm}{m}$ in diameter than that of center inlet and over 99.9% for overall collection efficiency. Pressure drop reduction ratios were shown as 40-50% for the applied voltage 0kV by centrifugal force and 70-90% for 20k V by the centrifuga and electrostatic force with the tangential inlet velocity (12-21m/s)