• 제목/요약/키워드: voltage dependence

검색결과 441건 처리시간 0.033초

4 stage 단자속 양자 Voltage Multiplier의 Simulation 결과 (Simulation Results of the 4 stage Single Flux Quantum Voltage Multiplier)

  • 추형곤;정구락;강준희
    • 한국초전도학회:학술대회논문집
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    • 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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    • pp.238-241
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    • 1999
  • Analog-to-digital converter has attracted a lot of interests as one of the most prospective area of an application of Josephson Junction technology. Recently, the development of a digital-to-analog converter has been pursued to achieved the high performance. One of the main advantage in using single flux quantum logic in a digital-to-analog converter is the low voltage drop in a single Josephson Junction and hence the resolution of the output voltage of this digital-to-analog converter can be very high. In this work, we have used a software, called WRspice, to study a voltage multiplier circuit which is the basic block in building a digital-to-analog circuit. In simulation, we operated a voltage multiplier with .4 Josephson Junctions per stage and studied the dependence on the circuit bias currents and the circuit inductors of the voltage multiplier. Our simulation results showed a fast operation and reasonable circuit margins.

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전력 품질의 개념 정립과 국제 표준 비교 (The Concept and International Standards of Power Quality)

  • 임수생;이은웅;손홍관;조현길;정종호;김준호
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2001년도 춘계학술대회 논문집 전기기기 및 에너지변환시스템부문
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    • pp.174-177
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    • 2001
  • The dependence of modern life upon the continuous supply of electrical energy makes system reliability and power quality topics of the utmost importance in the power systems. Power quality is the combination of voltage quality and current quality. But in this paper, voltage quality and harmonic distortion are focused. Transient phenomena and current quality are not included. Voltage quality is split into voltage sags. voltage swells, and short interruptions. These voltage variations are studied on their definitions, origins, the effect on electric equipment. Related industrial standards and guidelines are summarized. Harmonic voltage and current distortion are strongly linked. The concepts and contributions of harmonic distortions are studied. Typical symptoms of harmonic problems and a summary of the trends and guidelines are given.

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A Low Voltage Bandgap Current Reference with Low Dependence on Process, Power Supply, and Temperature

  • Cheon, Jimin
    • 한국정보기술학회 영문논문지
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    • 제8권2호
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    • pp.59-67
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    • 2018
  • The minimum power supply voltage of a typical bandgap current reference (BGCR) is limited by operating temperature and input common mode range (ICMR) of a feedback amplifier. A new BGCR using a bandgap voltage generator (BGVG) is proposed to minimize the effect of temperature, supply voltage, and process variation. The BGVG is designed with proportional to absolute temperature (PTAT) characteristic, and a feedback amplifier is designed with weak-inversion transistors for low voltage operation. It is verified with a $0.18-{\mu}m$ CMOS process with five corners for MOS transistors and three corners for BJTs. The proposed circuit is superior to other reported current references under temperature variation from $-40^{\circ}C$ to $120^{\circ}C$ and power supply variation from 1.2 V to 1.8 V. The total power consumption is $126{\mu}W$ under the conditions that the power supply voltage is 1.2 V, the output current is $10{\mu}A$, and the operating temperature is $20^{\circ}C$.

Dry Air/O2 혼합가스의 혼합비에 따른 절연파괴 및 연면방전 특성 연구 (A Study on Characteristics of Insulation Breakdown and Surface Discharge by the Mixing Ratio of Dry Air/O2 gas mixtures)

  • 석정후;백종현;임동영;배성우;김기채;박원주
    • 조명전기설비학회논문지
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    • 제29권6호
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    • pp.49-57
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    • 2015
  • This paper presents the discharge characteristics and economic feasibility of a Dry $Air/O_2$ and a $N_2/O_2$ mixture gas in order to review $SF_6$ alternative. From AC discharge experiment in an quasi-uniform field, it was found that the optimal $N_2/O_2$ mixing ratio which breakdown voltage and surface flashover voltage were the highest was 70/30 and that the pressure dependence on the breakdown voltage was higher than that of the surface flashover voltage in the Dry $Air/O_2$ and the $N_2/O_2$ mixture gas. The mixing ratio (70/30) and the tendency of the pressure dependence were described in detail based on physical factors (impact ionization coefficient, electron attachment coefficient, secondary electron emission coefficient) involved in discharge mechanism and a electron source, respectively. In addition, the performance insulation and the economic feasibility of the Dry $Air/O_2$ and the $N_2/O_2$ mixture gas were discussed so that Dry $Air/O_2$ mixture gaswas more suitable than $N_2/O_2$ mixture gas to the $SF_6$ alternative.

진단방사선촬영에서 광자극형광선량계의 에너지의존성에 대한 보정인자 (Correction Factor for the Eenergy Dependence of a Optically Stimulated Luminescent Dosimeter in Diagnostic Radiography)

  • 김종언;임인철;이효영
    • 한국방사선학회논문지
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    • 제5권5호
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    • pp.261-265
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    • 2011
  • 이 연구의 목적은 진단방사선촬영에서 환자의 피부선량을 측정하는 나노도트선량계의 에너지의존성에 대한 보정인자들을 구하는 것이다. 보정인자들은 랜다우어사에서 제공한 팬텀 정에 관한 X-선에 상대적인 선량계의 에너지반응그래프와 로사도 등이 발표한 IEC의 RQR 표준방사선 품질들에 대한 평균에너지 값들을 사용하여 구하였다. 결과들은 관전압 40-150 kVp에서 1-1.33의 보정인자들을 나타냈다. 얻어진 보정인자들은 각 관전압에서 정확한 피부선량 측정을 위하여 임상에 사용하는데 유용할 것으로 생각된다.

알루미늄 산화물 절연막에 하프늄의 첨가가 자기터널접합의 특성에 미치는 영향 (Effect of Insertion of Hf layer in Al oxide tunnel barrier on the properties of magnetic tunnel junctions)

  • 임우창;배지영;이택동;박병국
    • 한국자기학회지
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    • 제14권1호
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    • pp.13-17
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    • 2004
  • 알루미늄 산화물 절연막에 하프늄의 첨가가 미치는 영향에 관해서 연구하였다. 하프늄을 첨가할 경우 자기저항이 증가하고 자기저항의 온도의존도와 바이어스 전압의존도가 감소함을 관찰하였다. 이는 하프늄의 첨가가 알루미늄 산화물의 결함의 감소를 유발하기 때문이라 판단된다. 하프늄의 첨가된 알루미늄 산화물의 미세구조를 분석한 결과 하프늄이 알루미늄과 혼합됨이 관찰 되었다. 알루미늄과 하프늄의 혼합 금속을 절연막 형성을 위한 금속으로 사용한 결과 하프늄의 첨가된 알루미늄과 동일한 결과를 얻었다. 이로부터 하프늄이 알루미늄과 혼합하면서 절연막 내의 결함을 감소시키고 그에 따른 자기저항의 증가와 자기저항의 온도의존도와 바이어스 전압의존도를 감소시키는 결과를 가져온 것으로 판단된다.

$Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.1) (PLT(10)) 강유전체 박막에서 동적 초전특성의 주파수 의존성에 관한 연구 (A study on the Frequency Dependence of Dynamic Pyroelectric Properties for $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ (x=0.1) (PLT(10)) Ferroelectric Thin Film)

  • 차대은;장동훈;강성준;윤영섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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    • pp.104-107
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    • 2001
  • The fabricated La-modified lead titanate (PLT) thin flim without paling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_{3}$ PLT (x=0.1) thin film having 10 mol% La content was deposited on a $Pt/TiO_{x}/SiO_{2}/Si$ substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is $6.6{\times}10^{-9}C/cm_{2}\cdot K$ without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are $1.03{\times}10^{-11}C\cdot cm/J$ and $1.46\times 10^{-9}C\cdot cm/J$, respectively. The PLT(10) thin film has voltage responsivity (Rv) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are$9.93{\times}10^{-8}W/Hz^{1/2}$ and $1.81\times 10^{6}cmHz^{1/2}/W$ at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

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$Pb_{1-x}La_{x}Ti_{1-x/4}O_3$(x=0.1)(PLT(10)) 강유전체 박막에서 동적 초전특성의 주파수 의존성에 관한 연구 (A study on the Frequency Dependence of Dynamic Pyroelectric Properties for $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$(x=0.1)(PLT(10)) Ferroelectric Thin Film)

  • 차대은;장동훈;강성준;윤영섭
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 추계학술대회 논문집
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    • pp.104-107
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    • 2001
  • The fabricated La-modified lead titanate (PLT) thin flirt without poling treatment was investigated for modulation frequency dependence of pyroelectric properties by the dynamic method. $Pb_{1-x}La_{x}Ti_{1-x/4}O_3$PLT (x=0.1) thin film having 10 mol% La content was deposited on a Pt/$TiO_{x}$/$SiO_2$/Si substrate by sol-gel method. The PLT(10) thin film exhibits a relatively excellent dielectric property. The pyroelectric coefficient (p) of the PLT(10) thin film is 6.6 x $10^{-9}$C/$\textrm{cm}^2$.K without frequency dependence. The figure of merits for the voltage responsivity and specific detectivity are 1.03${\times}$$10^{-11}$/C.cm/J and 1.46 x $10^{-9}$C.cm/J, respectively. The PLT(10) thin film has voltage responsivity ($R_{V}$) of 5.15 V/W at 8 Hz. Noise equivalent power (NEP) and specific detectivity (D*) of the PLT(10) thin film are 9.93 x $10^{-8}$W/Hz$^{1/2}$ and 1.81 x $10^{6}$ cmHz$^{1/2}$/W at the same frequency of 100 Hz, respectively. The results means that PLT thin film having 10 mol % La content is suitable for the sensing materials of pyroelectric IR sensors.

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