• Title/Summary/Keyword: voltage biased dependent external quantum efficiency

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Investigation of Carrier Transport Mechanism in Schottky Type InAs/GaAs Quantum Dot Solar Cells

  • Kim, Ho-Seong;Ryu, Geun-Hwan;Yang, Hyeon-Deok;Park, Min-Su;Kim, Sang-Hyeok;Song, Jin-Dong;Choe, Won-Jun;Park, Jeong-Ho
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.319.1-319.1
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    • 2014

  • We present the results on the indium tin oxide (ITO) Schottky barrier solar cells (SBSCs) with InAs quantum dots (QDs). The dependence of external quantum efficiency on the external bias voltage has been studied to anlayze carrier extraction through tunneling at room temperature.

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