• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.179-185
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• 2009

Diamond-like carbon(DLC) films were deposited by linear ion source(LIS)-physical vapor deposition method changing the anode voltages from 800 V to 1800 V, and characteristics of the films were investigated using residual stress tester, nano-indentation, micro raman spectroscopy, scratch tester and Field Emission Scanning Electron Microscope(FE-SEM). The results showed that the residual stress and hardness increased with increasing the ion energy up to anode voltage of 1400 V. It was also found that the content of $SP^3$ carbon increased with increasing the anode voltage $SP^3/SP^2$ ratio through investigation of $SP^3/SP^2$ ratio by the micro-raman analysis. From these results, it can be concluded that the physical properties of DLC films such as residual stress and hardness are increased with increasing the anode voltage. These results can be explained that 3-dimensional cross-links between carbon atoms and Dangling bond are enhanced and the internal compressive stress also increased with increasing the anode voltage. The optimal anode voltage is considered to be around 1400 V in these experimental conditions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.11
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• pp.1241-1245
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• 2004

Continuous physical vapor deposition (PVD) method is one of many processes to fabricate long length coated conductor which is required for successful large-scale application of superconducting power devices. Three film deposition systems (pulsed laser deposition, sputtering, and evaporation) equipped with reel-to-reel(R2R) metal tape moving apparatus were installed and used to deposit multi-layer oxide thin films. Both RABiTS and IBAD texture templates are used. IBAD template consists of CeO$_2$(PLD)/YSZ(IBAD) on stainless steel(SS) metal tape, and RABiTS template has the structure of CeO$_2$/YSZ/Y$_2$O$_3$ which was continuously deposited on Ni-alloy tape using R$_2$R evaporation and DC reactive sputtering in a deposition system designed to do both processes. 0.4 m-long coated conductor with Ic(77 K) of 34 A/cm was fabricated using RABiTS template. 0.5 m and 1.1 m-long coated conductor with Ic(77 K) of 41 A/cm and 26 A/cm were fabricated using IBAD template.

• Korean Membrane Journal
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• v.3 no.1
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• pp.69-74
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• 2001

Films of TiO$_2$/SiO$_2$ were deposited on the inner surface of the porous glass support tubes by decomposition of tetraisopropyl titanate (TIPT) and tetraethyl orthosilicate (TEOS) at atmospheric pressure. Dense and hydrogen -permselective membranes were formed at 400-600$\^{C}$. The permeation rates of H$_2$ through the membrane at 600$\^{C}$ were 0.2-0.4 ㎤(STP)/min-㎠ atm and H$_2$:N$_2$permeation ratios were above 1000. The permeation properties of the membranes were investigated at various deposition temperatures and TIPT/TEOS concentrations. Decomposition of TIPT alone at temperatures above 400$\^{C}$ produced porous crystalline TiO$_2$ films and they were not H7-selective. Decomposition of TEOS produced H$_2$-permeable SiO$_2$ films at 400-600$\^{C}$ but film deposition rate was very low. Addition of TIFT to the TEOS stream significantly accelerated the deposition rate and produced highly H$_2$-selective films. Increasing the TIPT/TEOS concentration ratio increased the deposition rate. The TiO$_2$/SiO$_2$ membranes formed at 600 $\^{C}$ have the permeation properties comparable to those of SiO$_2$ membranes produced from TEOS.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.276-279
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• 2004

Plasma enhanced chemical vapor deposition (PECVD) of silicon nitride (SiN) is a proven technique for obtaining layers that meet the needs of surface passivation and anti-reflection coating. In addition, the deposition process appears to provoke bulk passivation as well due to diffusion of atomic hydrogen. This bulk passivation is an important advantage of PECVD deposition when compared to the conventional CVD techniques. A further advantage of PECVD is that the process takes place at a relatively low temperature of 300t, keeping the total thermal budget of the cell processing to a minimum. In this work SiN deposition was performed using a horizontal PECVD reactor system consisting of a long horizontal quartz tube that was radiantly heated. Special and long rectangular graphite plates served as both the electrodes to establish the plasma and holders of the wafers. The electrode configuration was designed to provide a uniform plasma environment for each wafer and to ensure the film uniformity. These horizontally oriented graphite electrodes were stacked parallel to one another, side by side, with alternating plates serving as power and ground electrodes for the RF power supply. The plasma was formed in the space between each pair of plates. Also this paper deals with the fabrication of multicrystalline silicon solar cells with PECVD SiN layers combined with high-throughput screen printing and RTP firing. Using this sequence we were able to obtain solar cells with an efficiency of 14% for polished multi crystalline Si wafers of size 125 m square.

• Korean Journal of Materials Research
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• v.33 no.4
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• pp.124-129
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• 2023

This study assessed the influences of fluorine introduced into DLC films on the structural and mechanical properties of the sample. In addition, the effects of the fluorine incorporation on the compressive stress in DLC films were investigated. For this purpose, fluorinated diamond-like carbon (F-DLC) films were deposited on cobalt-chromium-molybdenum substrates using radio-frequency plasma-enhanced chemical vapor. The coatings were examined by Raman scattering (RS), Attenuated total reflectance Fourier transform infrared spectroscopic analysis (ATR-FTIR), and a combination of elastic recoil detection analysis and Rutherford backscattering (ERDA-RBS). Nano-indentation tests were performed to measure hardness. Also, the residual stress of the films was calculated by the Stony equation. The ATR-FTIR analysis revealed that F was present in the amorphous matrix mainly as C-F and C-F₂ groups. Based on Raman spectroscopy results, it was determined that F made the DLC films more graphitic. Additionally, it was shown that adding F into the DLC coating resulted in weaker mechanical properties and the F-DLC coating exhibited lower stress than DLC films. These effects were attributed to the replacement of strong C = C by feebler C-F bonds in the F-DLC films. F-doping decreased the hardness of the DLC from 11.5 to 8.8 GPa. In addition, with F addition, the compressive stress of the DLC sample decreased from 1 to 0.7 GPa.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.107-112
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• 2010

The Cu$(In_{1-x}Ga_x)Se_2$ is the absorber material for thin film solar cell with high absorption coefficient of $1{\times}10^5cm^{-1}$. In the case of CIGS, the movable energy band gap from $CuInSe_2$ (1.00 eV) to $CuGaSe_2$ (1.68 eV) can be acquired while controlling Ga contain ratio. Generally, the co-evaporator method have used for development and fabrication of the CIGS absorption layer. However, this method should need many steps and lengthy deposition time with high temperature. For these reasons, in this paper, a new growth method of CIGS layer was attempted to hydride vapor transport (HVT) method. The CIGS mixed-source material reacted for HCl gas in the source zone was deposited on the substrate after transporting to growth zone. c-plane $Al_2O_3$ and undoped GaN were used as substrates for growth. The characteristics of grown samples were measured from SEM and EDS.

• Journal of the Korean Ceramic Society
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• v.39 no.5
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• pp.479-483
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• 2002

Silicon dioxide thick film using silica optical waveguide cladding was fabricated by Plasma Enhanced Chemical Vapor Deposition(PECVD) method, at a low temperature ($320^{\circ}$C) and from $(SiH_4+N_2O)$ gas mixtures. The effects of deposition parameters on properties of $SiO_2$ thick films were investigated by variation of $N_2O/SiH_4$ flow ratio and RF power. After the deposition process, the samples were annealed in a furnace at $1150^{\circ}$C, in N2 atmosphere, for 2h. As the $N_2O/SiH_4$ flow ratio increased, deposition rate decreased from 9.4 to 2.9 ${\mu}m/h$. As the RF power increased, deposition rate increased from 4.7 to 6.9 ${\mu}m/h$. The thickness and the refractive index measurements were measured by prism coupler. X-ray Photoelectron Spectroscopy(XPS) and Fourier Transform-infrared Spectroscopy(FT-IR) were used to determine the chemical states. The cross-section of films was observed by Scanning Electron Microscopy(SEM).

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.131-138
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• 1997

Silicon carbide films were chemically vapor deposited onto graphite substrates using MTS(Ch3SiCl3) as a source and Ar or H2 as a diluent gas. The experiments were performed at a fixed condition such as a de-position temperature of 130$0^{\circ}C$, a total pressure of 10 torr, and a flow rate of 100 sccm for each MTS and carrier gas. The purpose of this study is to consider the variation of the growth behavior with the addition of each diluent gas. It is shown that the deposition rate leads to maximum value at 200 sccm addition ir-respective of diluent gases and the deposition rate of Ar addition is faster than that of H2 one. It seems that these characteristics of deposition rate are due to varying interrelationship between boundary layer thick-ness and the concentration of a source with each diluent gas addition, when overall deposition rate is con-trolled by mass transport kinetics. The preferred orientation of (220) plane was maintained for the whole range of Ar addition. However, above 200 sccm addition, especially that of (111) plane was more increased in proportion to H2 addition. Surface morphologies of SiC films were the facet structures under Ar addition, but those were gradually changed from facet to smooth structures with H2 addition. Surface roughness be-came higher in Ar, but it became lower in H2 with increasing the amount of diluent gas.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.580-586
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• 2016

Cr-Si-Al-N coating with different Si content were deposited by hybrid physical vapor deposition (PVD) method consisting of unbalanced magnetron (UBM) sputtering and arc ion plating (AIP). The deposition temperature was $300^{\circ}C$, and the gas ratio of $Ar/N_2$ were 9:1. The CrSi alloy and aluminum targets used for arc ion plating and sputtering process, respectively. Si content of the CrSi alloy targets were varied with 1 at%, 5 at%, and 10 at%. The phase analysis, composition and microstructural analysis performed using x-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) including energy dispersive spectroscopy (EDS), respectively. All of the coatings grown with textured CrN phase (200) plane. The thickness of the Cr-Si-Al-N films were measured about $2{\mu}m$. The friction coefficient and removal rate of films were measured by a ball-on-disk test under 20N load. The friction coefficient of all samples were 0.6 ~ 0.8. Among all of the samples, the removal rate of CrSiAlN (10 at% Si) film shows the lowest values, $4.827{\times}10^{-12}mm^3/Nm$. As increasing of Si contents of the CrSiAlN coatings, the hardness and elastic modulus of CrSiAlN coatings were increased. The morphology and composition of wear track of the films was examined by scanning electron microscopy (SEM) and energy dispersive spectroscopy, respectively. The surface energy of the films were obtained by measuring of contact angle of water drop. Among all of the samples, the CrSiAlN (10 at% Si) films shows the highest value of the surface energy, 41 N/m.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.29 no.4
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• pp.179-186
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• 2019

In this study, we investigated the structural properties of $Ga_2O_3$ thin films and the photo-electrical properties of metal-semiconductor-metal (MSM) photodetectors deposited by Ti/Au electrodes. $Ga_2O_3$ thin films were grown at different temperatures using metal organic chemical vapor deposition (MOCVD). The crystal phase of $Ga_2O_3$ changed from ${\varepsilon}$-phase to ${\beta}$-phase depending on the growth temperature. The crystal structure of ${\varepsilon}-Ga_2O_3$ was confirmed by X-ray diffraction (XRD) analysis and the formation mechanism of crystal structure was discussed by scanning electron microscopy (SEM) images. From the results of current-voltage (I-V) and time-dependent photoresponse characteristics under the illumination of external lights, we confirmed that the MSM photodetector fabricated by ${\varepsilon}-Ga_2O_3$ showed much better photocurrent characteristics in the 266 nm UV range than in the visible range.