• 제목/요약/키워드: value of bi

검색결과 589건 처리시간 0.025초

해양 부이용 433 MHz와 920 MHz 이중 대역 안테나 (Dual Band Antenna of 433 MHz and 920 MHz for Marine Buoy)

  • 이성렬
    • 한국항행학회논문지
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    • 제25권6호
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    • pp.523-529
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    • 2021
  • 본 논문은 해양 IoT 서비스, 특히 어구 자동식별 시스템을 위한 해상 부이에 내장되는 안테나의 설계와 제작에 대해 살펴보았다. 제안하는 안테나의 주파수 대역은 해양 IoT 서비스의 확장성을 고려하여 433 MHz와 920 MHz 이중 대역으로 하였다. 안테나는 920 MHz 주파수 대역을 위한 이중 패턴 모노폴 구조와 433 MHz 대역을 위한 미앤더 구조로 설계되었다. 제작된 이중 대역 안테나의 전압 정재파비는 433 MHz에서 1.548로, 920 MHz 대역에서 평균 1.5로 측정되었다. 안테나 이득은 920 MHz 주파수 대역 중 902 MHz에서 최대값인 3.83 dBi가 얻어진 반면 433 MHz에서는 1.18 dBi로 얻어졌다. 433 MHz에서의 안테나 이득이 920 MHz 대역에서의 안테나 이득보다는 작지만 목표치인 -5 dBi를 초과하는 값이다. 또한 본 연구를 통해 얻은 다른 모든 측정값들은 어구 자동식별 시스템을 위한 해상 부이와 어선 사이의 통신 거리 목표치인 10 km를 달성할 수 있는 성능 기준에 해당한다는 것을 확인하였다.

가압소결된 다결정 $Bi_2Te_3-Bi_2Se_3$ 열전재료의 열전특성 (Thermoelectric properties of hot pressed polycrystalline $Bi_2Te_3-Bi_2Se_3$)

  • 황창원;홍인근;백동규;최승철
    • 한국결정성장학회지
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    • 제4권4호
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    • pp.363-369
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    • 1994
  • $Bi_2Te_3$계 열전반도체에서 단결정재료는 성능이 우수한 반면에 그 제조에 있어서 긴 공정시간과 그에 따른 구성성분의 손실이 있다. 본 연구에서는 짧은 공정시간으로 단결정 $Bi_2Te_3$계 열전반도체 제조 공저으이 단점을 극복하기 위해서 $Bi_2Te_3$계 열전반도체 제조 공저의 단점을 극복하기 위해서 $Bi_2Te_3$계 열전반도체를 교류 통전 가압법으로 제작하였다. 이 소결 방법에서는 소결시간이 다른 방법과 비교하여 짧기 때문에 Te의 증발로 인한 결함의 발생을 줄일 수 있었으며 제조공정시 재료의 손실도 최소화할 수있었다. 가압 소결한 95 mol% $Bi_2Te_3-5 mol% Bi_2Se_3$ 다결정 열전반도체의 최적의 소결조건은 분말입도, 소결온도, 시간, 압력별로 각각 $125~250 {\mu}m, 400^{\circ}C$, 2분, $1500Kgf/cm^2$이고, 이조건에서 열전성능지수 $Z=2.2{\times}10^{-3}/K$이다.

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마이크로파 유전체 $Bi_{0.97}Tm_{0.03}NbO_{4}$$V_{2}O_{5}$ 첨가에 따른 유전특성 (The microwave dielectric properties of $Bi_{0.97}Tm_{0.03}NbO_{4}$ doped with $V_{2}O_{5}$)

  • 황창규;장건익
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.350-353
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    • 2002
  • The microwave dielectric properties and the microstructures on $Bi_{0.97}Nb_{0.03}O_{4}$doped with $V_{2}O_{5}$ were systematically investigated. $Bi_{0.97}Tm_{0.03}Nb_{0.03}O_{4}$ ceramics sintered at $920-960^{\circ}C$were mainly consisted of orthorhombic and triclinic phases after addition of $V_{2}O_{5}$. The apparent density increased slightly with increasing the $V_{2}O_{5}$ addition. The dielectric $constants(\varepsilon_r)$ also increased with $V_{2}O_{5}$ addition(30-45). The $Q{\times}f_0$ values measured on $Bi_{0.97}Tm_{0.03}NbO_4$ ceramics doped with $V_{2}O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures are in the range of $920-960[^{\circ}C]$. It was confirmed the temperature coefficient of the resonant $frequency(\tau_f)$ can be adjusted from a positive value of $+10[ppm/^{\circ}C]$ to a negative value of $-15ppm/^{\circ}C$ by increasing the amount of $V_{2}O_{5}$. Based on our experimental results, the Bi0.97Tm0.03NbO4(added V2O5) ceramics can be applied to multilayer microwave devices at low sintering temperatures.

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고전압 캐패시터용 ($Sr_{0.50}/$Pb_{0.25}$/$Ba_{0.25}$)$TiO_3$-$Bi_2$$Ti_3O_{9}$ 세라믹의 유전특성 (Dielectric properties of ($Sr_{0.50}Pb_{0.25}Ba_{0.25}$)$TiO_3$-$Bi_2$$Ti_3$$O_{9}$ ceramics for the high-voltage capacitor)

  • 김세일;정장호;이영희;배선기
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1993년도 추계학술대회 논문집
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    • pp.17-20
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    • 1993
  • In this paper, the (1-x)($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$-x $Bi_2$$Ti_3$$O_{9}$(x=0,4,6,8[mol.%]) ceramics with paraelectric properties were, fabricated by mixed oxide method. The dielectric and structural properties of ceramics were studied with sintering temperature and addition of $Bi_2Ti_3O_{9}$, and the application for the high - voltage capacitor was investigated. In the specimens with sintering at 1350[$^{\circ}C$], sintered density was showed the highest value of 5.745[g/cm$^3$]. Increasing of sintering temperature, average grain size was increased. The specimen. ($Sr_{0.50}$$Pb_{0.25}$$Ba_{0.25}$)$TiO_3$sintered at 1350[$^{\circ}C$] showed good dielectric properties and breakdown voltage was showed the highest value of 200[kV]. Temperature coefficient of capacitance was stabilized in specimens added $Bi_2Ti_3O_{9}$ Sintered density. dielectric properties and breakdown voltage ware decreased with increasing the contents of $Bi_2Ti_3O_{9}$.

반사광 측정 모드에서 금과 은을 사용한 이층 금속 칩과 삼층 금속 칩의 특성 연구 (Characteristics of Gold and Silver Based Bi- and Tri-metallic SPR Chip in the Intensity Measurement Mode)

  • 김형진;김창득;손영수
    • 센서학회지
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    • 제25권2호
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    • pp.143-147
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    • 2016
  • Characteristics of the conventional gold (Au) surface plasmon resonance (SPR) chip, bi-metallic(Au/silver (Ag)) SPR chip, and tri-metallic(Au/Ag/Au) SPR chip were investigated and compared in the intensity measurement mode for the enhancement of SPR image sensor reactivity. Reflectance curves of the Au, bi- and tri-metallic SPR chips were acquired in phosphate-buffered saline (PBS) solution and were compared. The line width of the reflectance curve of the bi-metallic chip was the narrowest among the three different types of the chips. Also, the tangential slope of the bi-metallic chip was steeper than those of the other chips. Various concentrations of bovine serum albumin (BSA) were utilized in the SPR experiment. As a result, among the above three chips reflectance variation value of the bi-metallic chip was the largest.

$Bi_2O_3$ 첨가에 따른 (Na,K,Li)$NbO_3$계 무연 압전 세라믹스의 압전특성 (The Piezoelectrc properties of (Na,K)$NbO_3$-system Pb-free Piezoelectric Ceramics with $Bi_2O_3$ Addition)

  • 류성림;이호일;배세환;김주현;김용주;서상현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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    • pp.216-217
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    • 2005
  • In this paper, in order to develop Pb-free piezoelectric ceramics, $(Li_{0.05}Na_{0.57}K_{0.38})NbO_3$ ceramic was fabricated with the variation of $Bi_2O_3$ addition. Piezoelectric properties of the ceramic were varied with the amount of $Bi_2O_3$ addition and showed the maximum kp value at.0.2 wt% $Bi_2O_3$ addition. Qm of $Bi_2O_3$ added ceramics showed lower values than the non-added ceramics, however, the kp was increased by the addition of $Bi_2O_3$ up to 0.2 wt%. At the sintering temperature of 1110$^{\circ}C$ and the calcination temperature of 850$^{\circ}C$, the optimal values of density=4.52g/$cm^3$, kp=0.47, $\varepsilon_r$=400 were obtained.

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Novel Bi2S3/TiO2 Heterogeneous Catalyst: Photocatalytic Mechanism for Decolorization of Texbrite Dye and Evaluation of Oxygen Species

  • Zhu, Lei;Oh, Won-Chun
    • 한국세라믹학회지
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    • 제53권1호
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    • pp.56-62
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    • 2016
  • A heterogeneous $Bi_2S_3/TiO_2$ composite catalyst was synthesized via a green ultrasonic-assisted method and characterized by XRD, SEM, EDX, TEM analysis. The results clearly show that the $TiO_2$ particles were homogenously coated with $Bi_2S_3$ particles, indicating that $Bi_2S_3$ particle agglomeration was effectively inhibited after the introduction of anatase $TiO_2$. The Texbrite BA-L (TBA) degradation rate constant for $Bi_2S_3/TiO_2$ composites reached $8.27{\times}10^{-3}min^{-1}$ under visible light, much higher than the corresponding value of $1.04{\times}10^{-3}min^{-1}$ for $TiO_2$. The quantities of generated hydroxyl radicals can be analyzed by DPCI degradation, which shows that under visible light irradiation, more electron-hole pairs can be generated. Finally, the possible mechanism for the generation of reactive oxygen species under visible-light irradiation was proposed as well. Our result shows the significant potential of $Bi_2S_3$-semiconductor-based $TiO_2$ hybrid materials as catalysts under visible light for the degradation of industry dye effluent substances.

소결온도에 따른 (Ba,Bi,Sr)$TiO_3$세라믹스의 구조적 특성 (The structural properties of the (Ba,Bi,Sr)$TiO_3$ceramics with sintering temperature)

  • 남규빈;최의선;김지헌;이문기;이영희
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2001년도 하계학술대회 논문집
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    • pp.693-696
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    • 2001
  • The (Ba$_{0.3}$Bi$_{0.3}$Sr$_{0.4}$)TiO$_3$[BBST] ceramics were prepared by conventional mixed oxide method. The structural properties of the BBST ceramics with sintering temperature were investigated by XRD, SEM, EDS. In the case of BBST ceramics sintered at 1150~135$0^{\circ}C$, the $Ba_{0.5}$Sr$_{0.5}$TiO$_3$and SrBi$_4$Ti$_4$O$_{15}$ phase were coexisted. The 2$\theta$ value of the BST (110) peaks were shifted to the lower degree at the sintering temperature of 130$0^{\circ}C$ and 135$0^{\circ}C$. The grains of the BBST ceramics sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$ were not appeared. Increasing the sintering temperature, the densities of the BBST ceramics were increased. In the BBST ceramics sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$, the mole ratio of Bi was decreased.d.ed.d.d.d.

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Cross-Domain Text Sentiment Classification Method Based on the CNN-BiLSTM-TE Model

  • Zeng, Yuyang;Zhang, Ruirui;Yang, Liang;Song, Sujuan
    • Journal of Information Processing Systems
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    • 제17권4호
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    • pp.818-833
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    • 2021
  • To address the problems of low precision rate, insufficient feature extraction, and poor contextual ability in existing text sentiment analysis methods, a mixed model account of a CNN-BiLSTM-TE (convolutional neural network, bidirectional long short-term memory, and topic extraction) model was proposed. First, Chinese text data was converted into vectors through the method of transfer learning by Word2Vec. Second, local features were extracted by the CNN model. Then, contextual information was extracted by the BiLSTM neural network and the emotional tendency was obtained using softmax. Finally, topics were extracted by the term frequency-inverse document frequency and K-means. Compared with the CNN, BiLSTM, and gate recurrent unit (GRU) models, the CNN-BiLSTM-TE model's F1-score was higher than other models by 0.0147, 0.006, and 0.0052, respectively. Then compared with CNN-LSTM, LSTM-CNN, and BiLSTM-CNN models, the F1-score was higher by 0.0071, 0.0038, and 0.0049, respectively. Experimental results showed that the CNN-BiLSTM-TE model can effectively improve various indicators in application. Lastly, performed scalability verification through a takeaway dataset, which has great value in practical applications.

플라즈마분자선에피탁시법으로 성장한 산화비스무스아연 박막의 구조특성 (Structural Characterization of Bismuth Zinc Oxide Thin Films Grown by Plasma-Assisted Molecular Beam Epitaxy)

  • 임동석;신은정;임세환;한석규;이효성;홍순구;정명호;이정용;조형균
    • 한국재료학회지
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    • 제21권10호
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    • pp.563-567
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    • 2011
  • We report the structural characterization of $Bi_xZn_{1-x}O$ thin films grown on c-plane sapphire substrates by plasma-assisted molecular beam epitaxy. By increasing the Bi flux during the growth process, $Bi_xZn_{1-x}O$ thin films with various Bi contents (x = 0~13.17 atomic %) were prepared. X-ray diffraction (XRD) measurements revealed the formation of Bi-oxide phase in (Bi)ZnO after increasing the Bi content. However, it was impossible to determine whether the formed Bi-oxide phase was the monoclinic structure ${\alpha}-Bi_2O_3$ or the tetragonal structure ${\beta}-Bi_2O_3$ by means of XRD ${\theta}-2{\theta}$ measurements, as the observed diffraction peaks of the $2{\theta}$ value at ~28 were very close to reflection of the (012) plane for the monoclinic structure ${\alpha}-Bi_2O_3$ at 28.064 and the reflection of the (201) plane for the tetragonal structure ${\beta}-Bi_2O_3$ at 27.946. By means of transmission electron microscopy (TEM) using a diffraction pattern analysis and a high-resolution lattice image, it was finally determined as the monoclinic structure ${\alpha}-Bi_2O_3$ phase. To investigate the distribution of the Bi and Bi-oxide phases in BiZnO films, elemental mapping using energy dispersive spectroscopy equipped with TEM was performed. Considering both the XRD and the elemental mapping results, it was concluded that hexagonal-structure wurtzite $Bi_xZn_{1-x}O$ thin films were grown at a low Bi content (x = ~2.37 atomic %) without the formation of ${\alpha}-Bi_2O_3$. However, the increased Bi content (x = 4.63~13.17 atomic %) resulted in the formation of the ${\alpha}-Bi_2O_3$ phase in the wurtzite (Bi)ZnO matrix.