• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.378.2-378.2
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• 2014

We have investigated optical characteristics of $p-Ge_{0.99}Sn_{0.01}$ and Ge films grown on Si substrates using photoreflectance (PR) spectroscopy. The $Ge_{0.99}Sn_{0.01}$ and Ge films were grown by using an ultra-high vacuum chemical vapor deposition and molecular beam epitaxy methods, respectively. PR spectra were measured at 25 K and an extended InGaAs detector was used. By comparing $Ge_{0.99}Sn_{0.01}/Si$ and Ge/Si spectra, we observed the signals related to direct transition and split-off band of $Ge_{0.99}Sn_{0.01}$. The transition energies of $Ge_{0.99}Sn_{0.01}$ and Ge films were approximately 0.74 and 0.84 eV, respectively. Considering the shift of split-off band transition of $Ge_{0.99}Sn_{0.01}$, we suppose that the transition at 0.74 eV is attributed to direct transition between ${\Gamma}$ band and valence band. The temperature- and excitation power-dependent PR spectra were also measured.

• Applied Science and Convergence Technology
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• v.23 no.5
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• pp.201-210
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• 2014

The influence of electron irradiation and hydrogen adsorption on the electronic structure of the $SrTiO_3$ (001) surface was investigated by ultraviolet photoemission spectroscopy (UPS). Upon electron irradiation of the surface, UPS revealed an electronic state within the band gap (in-gap state: IGS) with the surface kept at $1{\times}1$. This is considered to originate from oxygen vacancies at the topmost surface formed by electron-stimulated desorption of oxygen. Electron irradiation also caused a downward shift of the valence band maximum indicating downward band-bending and formation of a conductive layer on the surface. With oxygen dosage on the electron-irradiated surface, on the other hand, the IGS intensity was decreased along with upward band-bending, which points to disappearance of the conductive layer. The results indicate that electron irradiation and oxygen dosage allow us to control the surface electronic structure between semiconducting (nearly-vacancy free: NVF) and metallic (oxygen de cient: OD) regimes by changing the density of the oxygen vacancy. When the NVF surface was exposed to atomic hydrogen, in-gap states were induced along with downward band bending. The hydrogen saturation coverage was evaluated to be $3.1{\pm}0.8{\times}10^{14}cm^{-2}$ with nuclear reaction analysis. From the IGS intensity and H coverage, we argue that H is positively charged as $H^{{\sim}0:3+}$ on the NVF surface. On the OD surface, on the other hand, the IGS intensity due to oxygen vacancies was found to decrease to half the initial value with molecular hydrogen dosage. H is expected to be negatively charged as $H^-$ on the OD surface by occupying the oxygen vacancy site.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.134-134
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• 2010

Ga-In-Zn-O 물질은 비정질상태에서 높은 전하 운동성을 가지고 있으며 차세대 투명전극 thin film transistor 대안 소재로 각광받고 있다. 그런데 이 물질은 ion sputtering에 따라 전기적인 특성에 큰 변화가 관찰되고 있으며, 이는 표면에서의 화학적 상태가 전기적 특성을 좌우할 것이라는 것을 의미한다. 또한 보다 안정적이고 신뢰적인 소자를 구현하기 위해서는 ion sputtering에 의한 표면에서의 화학적 특성 변화를 이해하는 것이 매우 중요하다는 것을 의미한다. 본 연구에서는 $Ga_2O_3:In_2O_3$:ZnO의 비율이 각각 1:1:1, 2:2:1, 3:2:1 그리고 4:2:1인 시료를 $Ne^+$이온을 이용하여 sputtering하면서 표면에 민감한 분광분석 기법인 x-ray photoelectron spectroscopy와 x-ray absorption spectroscopy를 이용하여 분광정보의 변화들을 연구하였다. 실험에 의하면, Ga 3d의 양에 비해서 In 4d, Zn 3d의 양은 sputtering 시간에 따라서 각 각 양이 줄어들었으며, 전체적으로 보다 산화가가 높은 경향을 보였으며, valence band maximum 근처에 subgap state를 형성하는 것을 관찰하였다. 또한 sputtering을 계속하는 경우 In 3d, In 4d, 및 Fermi energy 근처에 metallic state가 형성되는 것을 관찰하였다. 이러한 subgap state와 metallic state의 관측은 각기 sputtering에 따라서, 아직 명확하지는 않지만, surface state의 형성 및/혹은 oxygen interstitial의 형성 그리고 metallic In의 형성 및/혹은 oxygen defect의 형성이 이루어지는 것을 의미한다.

• Bulletin of the Korean Chemical Society
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• v.17 no.12
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• pp.1127-1131
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• 1996

[FeⅡ2(N-Et-HPTB)Cl2]BPh4(1), where N-Et-HPTB is the anion of N,N,N',N'-tetrakis(N-ethyl-2-benzimidazolylmethyl)-2-hydroxy-l,3-diaminopropane, has been synthesized to model dioxygen binding to the diferrous centers of proteins. 1 has a singly bridged structure with a μ-alkoxo of N-Et-HPTB and contains two five-coordinate iron(Ⅱ) centers with two chloride ligands as exogenous ligands. 1 exhibits an electronic spectrum with a λmax at 336 nm in acetone. 1 in acetone exhibits no EPR signal at 4 K, indicating diiron(Ⅱ) centers are antiferromagnetically coupled. Exposure of acetone solution of 1 to O2 at -90 ℃ affords an intense blue color intermediate showing a broad band at 586 nm. This absorption maximum of the dioxygen adduct(1/O2) was found in the same region of μ-l,2-peroxo diiron(Ⅲ) intermediates in the related complexes with pendant pyridine or benzimidazole ligand systems. However, this blue intermediate exhibits EPR signals at g = 1.93, 1.76, and 1.59 at 4 K. These g values are characteristic of S = 1/2 system derived from an antiferromagnetically coupled high-spin Fe(Ⅱ)Fe(Ⅲ) units. 1 is the unique example of a (μ-alkoxo)diferrous complex which can bind dioxygen and form a metastable mixed-valence intermediate. At ambient temperature, most of 1/O2 intermediate decays to form a diamagnetic species. It suggests that the dacay reaction of the intermediate might be bimolecular, implying the formation of mixed-valence tetranuclear species in transition state.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.128.1-128.1
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• 2016

Nitrided-metal gates on the high-${\kappa}$ dielectric material are widely studied because of their use for sub-20nm semiconductor devices and the academic interest for the evanescent states at the Si/insulator interface. Issues in these systems with the Si substrate are the electron mobility degradation and the reliability problems caused from N defects that permeates between the Si and the $SiO_2$ buffer layer interface from the nitrided-gate during the gate deposition process. Previous studies proposed the N defect structures with the gap states at the Si band gap region. However, recent experimental data shows the possibility of the most stable structure without any N defect state between the bulk Si valence band maximum (VBM) and conduction band minimum (CBM). In this talk, we present a new type of the N defect structure and the electronic structure of the proposed structure by using the first-principles calculation. We find that the pair structure of N atoms at the $Si/SiO_2$ interface has the lowest energy among the structures considered. In the electronic structure, the N pair changes the eigenvalue of the silicon-induced gap state (SIGS) that is spatially localized at the interface and energetically located just above the bulk VBM. With increase of the number of N defects, the SIGS gradually disappears in the bulk Si gap region, as a result, the system gap is increased by the N defect. We find that the SIGS shift with the N defect mainly originates from the change of the kinetic energy part of the eigenstate by the reduction of the SIGS modulation for the incorporated N defect.

• Clean Technology
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• v.15 no.3
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• pp.202-209
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• 2009

N-incorporated $WO_3$ ($WO_3$:N) films were synthesized using a reactive RF magnetron sputtering on unheated substrate and then post-annealed at different temperatures from 300 to $500^{\circ}C$ in air. The N anion narrowed optical band gap, due to its mixing effect with the O 2p valence states. Furthermore, it was found that the crystallinity of the $WO_3$:N films was significantly improved by the post-annealing at $350^{\circ}C$ and higher. As a result, the $WO_3$:N films exhibited much better photoelectrochemical performance, compared with pure $WO_3$ films post-annealed at the same temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.691-696
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• 2004

The electronic state and chemical bonding of $\beta$-MnO$_2$ with transition metal dopants were theoretically investigated by DV-X$_{\alpha}$ (the discrete variational X$_{\alpha}$) method, which is a sort of the first principles molecular orbital method using the Hartree-Fock-Slater approximation. The calculations were performed with a $_Mn_{14}$ MO$_{56}$ )$^{-52}$ (M = transition metals) cluster model. The electron energy level, the density of states (DOS), the overlap population, the charge density distribution, and the net charges, were calculated. The energy level diagram of MnO$_2$ shows the different band structure and electron occupancy between the up spin states and down spin states. The dopant levels decrease between the conduction band and the valence band with the increase of the atomic number of dopants. The covalency of chemical bonding was shown to increase and ionicity decreased in increasing the atomic number of dopants. Calculated results were discussed on the basis of the interaction between transition metal 3d and oxygen 2p orbital. In conclusion it is expected that when the transition metals are added to MnO$_2$ the band gap decreases and the electronic conductivity increases with the increase of the atomic number of dopants. the atomic number of dopants.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.142.2-142.2
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• 2016

The metal intercalation to an organic semiconductor is of importance since the charge transfer between a metal and an organic semiconductor can induce the highly enhanced conductivity for achieving efficient organic electronic devices. In this regard, the changes of the electronic structure of copper phthalocyanine (CuPc) caused by the intercalation of potassium are studied by ultraviolet photoemission spectroscopy (UPS) and density functional theory (DFT) calculations. Potassium intercalation leads to the appearance of an intercalation-induced peak between the highest molecular occupied orbital (HOMO) and the lowest molecular unoccupied orbital (LUMO) in the valence-band spectra obtained using UPS. The DFT calculations show that the new gap state is attributed to filling the LUMO+1, unlike a common belief of filling the LUMO. However, the LUMO+1 is not conductive because the ${\pi}$-conjugated macrocyclic isoindole rings on the molecule do not make a contribution to the LUMO+1. This is the origin of a metal-insulator transition through heavily potassium doped CuPc.

• Journal of the Korean Chemical Society
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• v.34 no.6
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• pp.593-599
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• 1990

A series of new, square planar, and mixed-ligand complexes of Ni(Ⅱ), Pd(Ⅱ), and Pt(Ⅱ) have been prepared. From the observation of electronic spectrum for the variation of the ligand substituents, the very intense absorption band in the visible range is by the electronic transition of dithiolene to diimine ligand, HOMO to LUMO. In the various solvent systems the IT band shows the similar behavior to IT transition of mixed-valence dinuclear complexes followed with Hush theory, happens rto dominently by the inner sphere charge transfer transition. The negative solvatochromism represents that the excited-state electric dipole is reduced or reversed by the electronic transition.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.17 no.1
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• pp.58-67
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• 1992

Optical absorption and photoluminescences(PL) of MgGa2Se4 and MgGa2Se4 : Co2+ single crustals were guown by the Bridgman method have been investigated in the visible and near-in frared regions. The optical absorption spectrum showed three absorption peak at 760 nm(13158nm, -1, 1.63eV), 1640nm(6097cm-1, 0.75eV).and 2500nm(4000cm-1,0.49eV) which are assigned the electronic transitions between the ground state and excited states of Co2+ ions with Td sym-metry in MgGa2Se4 host lattice. In PL spectrum the visible emission bands as well as the infrared emission band in these single cuystals are obserned. The visible emission bands are explained due to the radiative transitions of electrons from quasi continusly distributed tarps below the bottom of the conduction band to acceptor levels above the top of the valence band in the proposed energy level scheme. At the same time, it is considered that the infrated emission bands are attributed to electron transitions from the deep levels to the acceptor levels. The mechanism of the optical transition os well explained in terms of the energy diagram of MgGa2Se4.