• Journal of the Korean Society for Precision Engineering
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• v.18 no.1
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• pp.89-97
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• 2001

A microgyroscope, which vibrates in two orthogonal axes on the substrate plane, is designed and fabricated. The shuttle mass of the vibrating gyroscope consists of two parts. The one is outer shuttle mass which vibrates in driving mode guided by four folded springs attached to anchors. And the other is inner shuttle mass which vibrates in driving mode as the outer frame does and also can vibrate in sensing mode guided by four folded springs attached to the outer shuttle mass. Due to the directions of vibrating mode, it is possible to fabricate the gyroscope with simplified process by using polysilicon on insulator structure. Fabrication processes of the microgyroscope are composed of anisotropic silicon etching by RIE, gas-phase etching (GPE) of the buried sacrificial oxide layer, metal electrode formation. An eletromechanical model of the vibrating microgyroscope was modeled and bandwidth characteristics of the gyroscope operates at DC 4V and AC 0.1V in a vacuum chamber of 100mtorr. The detection circuit consists of a discrete sense amplifier and a noise canceling circuit. Using the evaluated electromechanical model, an operating condition for high performance of the gyroscope is obtained.

• Tribology and Lubricants
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• v.37 no.6
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• pp.203-207
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• 2021

This study presents the development of dielectric constant sensors to measure lubricant properties. The lubricant oil sensor is used to measure oil properties and machine conditions. Various condition monitoring methods are applied to diagnose machine conditions. Machine condition monitoring using oil sensors has advantage over other machine condition monitoring methods. The fault conditions can be noticed at the early stages by the detection of wear particles using oil sensors. Therefore, it provides an early warning in the failure procedure. A variety of oil sensors are applied to check the machine condition. Among all oil sensors, only one sensor can measure the tendency of several properties such as acidity and water content. A dielectric constant sensor is also used to measure various oil properties; therefore, it is very useful. The dielectric constant is the ratio of the capacitance of a capacitor using that material as a dielectric to that of a similar capacitor using vacuum as its dielectric. The dielectric constant has an effect on water content, contaminants, base oil, additive, and so forth. In this study, the dielectric constant sensor is fabricated using MEMS process. In the fabrication process, the shape, gap of the electrode array, and thickness of the insulation material are considered to improve the sensitivity of the sensor.

• Nuclear Engineering and Technology
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• v.54 no.8
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• pp.2999-3005
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• 2022

The new experimental setup has been built at the 11b channel of the IBR-2 research reactor at FLNP, JINR, to study the elemental composition of samples by registration of prompt gamma emission during thermal neutron capture. The setup consists of a curved mirror neutron guide and a radiation-resistant HPGe high-purity germanium detector. The detector is surrounded by lead shielding to suppress the natural background gamma level. The sample is placed in a vacuum channel and surrounded by a LiF shield to suppress the gamma background generated by scattered neutrons. This work presents characteristics of the experimental setup. An example of hydrogen concentration determining in a diamond powder made by detonation synthesis is given and on its basis, the sensitivity of the setup is calculated being ~4 ㎍.

• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.475-480
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• 2001

Diffusion of Cu into the low-k para-xylene based plasma polymer (pXPP) thin films deposited by plasma-enhanced chemical vapor deposition using the para-xylene precursor was comparatively measured using various methods. Cu layer was deposited on the surfaces of pXPPs treated by $N_2$ plasma generated in a magnetically enhanced inductively coupled plasma reactor. Diffusion characteristics of Cu into pXPPs were measured using Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), cross-sectional transmission electron microscopy (XTEM), and current-voltage (I-V) measurements for the vacuum-annealed Cu/pXPPs for 1 hour at $450^{\circ}C$ and were compared. The results showed a correlation between the I-V measurement and SIMS data are correlated and have a sensitivity enough to evaluate the dielectric properties but the RBS or XTEM measurements are not sufficient to conclude the electrical properties of low-k dielectrics with Cu in the film bulk. The additional results indicate that the pXPP layers are quite resistant to Cu diffusion at the annealing temperature of $450^{\circ}C$ compared to the other previously reported organic low-k materials.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.37.1-37.1
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• 2021

For the first time in Korea, we are developing technology for gravitational wave (GW) detectors as a major R&D program. Our main research target is quantum noise reduction technology which can enhance the sensitivity of a GW detector beyond its limit by classical physics. Technology of generating squeezed vacuum state of light (SQZ) can suppress quantum noise (shot noise at higher frequencies and radiation pressure noise at lower frequencies) of laser interferometer type GW detectors. Squeezing technology has recently started being used for GW detectors and becoming necessary and key components. Our ultimate goal is to participate and make contribution to international collaborations for upgrade of existing GW detectors and construction of next generation GW detectors. This presentation will summarize our results in 2020 and plan for the upcoming years. Technical details will be presented in other family talks.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.327-328
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• 2012

의료분야의 진단 방사선 장비는 초기의 필름방식 및 카세트에서 진보되어 현재는 디지털방식의 DR (Digital Radiography)이 널리 사용되며 이에 관한 연구개발이 활발히 진행 되고 있다. DR은 일반적으로 직접방식과 간접방식으로 나눌 수 있다. 직접방식의 원리는 X선을 흡수하면 전기적 신호를 발생 시키는 광도전체(Photoconductor)를 사용하여 광도전체 양단 전극에 전압을 인가하여 전기장을 유도한 가운데, X선을 조사하면 광도전체 내부에서 전자-전공쌍(Electron-hole pair)이 생성된다. 이것은 양단에 유도된 전기장의 영향으로 전자는 +극으로, 전공은 -극으로 이동하여 아래에 위치한 하부기판을 통하여 이미지로 변조된다. 간접방식은 X선을 흡수하면 가시광선으로 전환하는 형광체(Scintillator)를 사용하여 조사된 X선을 형광체에서 가시광선으로 전환하고, 이를 Photodiode와 같은 광변환소자로 전기적 신호로 변환하여 방사선을 검출하는 방식을 말한다. 본 연구에서는 직접방식에서 이용되는 광도전체 중 흡수효율이 높고 Mobility가 뛰어난 CdTe를 선정하여 PVD (Physical vapor deposition)방식으로 300 m의 두께를 목표로 하여 증착을 진행하였다. Chamber의 진공도가 $2.5{\times}10^{-2}$ Torr로 도달 시점부터, Substrate와 Boat에 열을 가하였다. Substrate온도는 $350^{\circ}C$, Boat온도는 $300^{\circ}C$도로 설정하여 11시간 동안 진행하였다. Substrate온도는 $303^{\circ}C$, Boat온도는 $297^{\circ}C$도부터 증착이 시작되어 선형적인 증가세 추이를 나타내어 Substrate 및 Boat온도가 설정 값에 도달 하였을 때, $25{\sim}34.4{\AA}/s$ 증착율을 나타내었다. 하부전극의 물질에 따른 CdTe증착 효율성 평가를 진행한 후, 그에 따른 전기적 특성을 알아보았다. 하부전극의 물질로는 ITO (Indium Tin Oxide), Parylene이 코팅 된 ITO, Au, Ag를 사용하였다. 하부전극의 물질 상단에 Thermal Evaporation System을 사용하여 CdTe를 증착한 후, Cdte 상단에 Au를 증착 시켜 민감도(Sensitivity)와 암전류(Dark current)를 측정하였다. 증착 결과 ITO와 Ag상단에 증착시킨 CdTe박막은 박리가 되었고, Au와 Parylene이 코팅 된 ITO에는 CdTe박막이 안정적이게 형성이 되었다. 이 두 샘플에 대하여 동일한 조건으로 민감도와 암전류를 측정 시, Parylene이 코팅된 ITO를 하부전극으로 사용한 CdTe박막은 0.1021 pA/$cm^2$의 암전류와 1.027 pC/$cm^2$의 민감도를 나타낸 반면, Au를 하부전극으로 사용한 CdTe박막은 0.0381 pA/$cm^2$의 암전류와 1.214 pC/$cm^2$의 민감도를 나타내어 Parylene이 코팅된 ITO보다 우수한 전기적 특성을 나타내었다. 따라서 Au는 CdTe박막 증착 시, 하부전극 기판으로서 뛰어난 특성을 나타내는 것을 알 수 있었다.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.220-226
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• 1997

An optical intensity-type pressure sensor has been fabricated by coupling multimode optical fiber with 100 nm-Au/30 nm-NiCr/150 nm-$Si_3N_4/300 nm-SiO_2/150 nm-Si_3N_4$ optical reflection layer supported by micromachined frame-shape silicon substrate, and its characteristics was investigated. For the application of $Si_3N_4/SiO_2/Si_3N_4$ diaphragm to the optical reflection layer of the sensor, NiCr and Au films were deposited on the backside of the diaphragm by thermal evaporation , respectively, and thus optical low caused by transmission in the reflection layer could be decreased to a few percents. Dielectric diaphragms with uniform thickness were able to be also reproduced because top- and bottom-$Si_3N_4$ layer of the diaphragm could automatically stop silicon anisotropic etching. The respective pressure ranges in which the sensor showed linear optical output power-pressure characteristics were 0~126.64 kPa, 0~79. 98 kPa, and 0~46.66 kPa, and the respective pressure sensitivities of the sensor were about 20.69 nW/kPa, 26.70 nW/kPa, and 39.33 nW/kPa, for the diaphragm sizes of 3$\times$3 $\textrm{mm}^2$, 4$\times$4 $\textrm{mm}^2$, and 5$\times$5 $\textrm{mm}^2$, indicating that the sensitivity increases as diaphragm size increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.348-348
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• 2011

Carbon nanotube (CNT) field effect transistors and sensors use CNT as a current channel, of which the resistance varies with the gate voltage or upon molecule adsorption. Since the performance of CNT devices depends very much on the CNT/metal contact resistance, the CNT/electrode contact must be stable and the contact resistance must be small. Depending on the geometry of CNT/electrode contact, it can be categorized into the end-contact, embedded-contact (top-contact), and side-contact (bottom-contact). Because of difficulties in the sample preparation, the end-contact CNT device is seldom practiced. The embedded-contact in which CNT is embedded inside the electrode is desirable due to its rigidness and the low contact resistance. Fabrication of this structure is complicated, however, because each CNT has to be located under a high-resolution microscope and then the electrode is patterned by electron beam lithography. The side-contact is done by depositing CNT electrophoretically or by precipitating on the patterned electrode. Although this contact is fragile and the contact resistance is relatively high, the side-contact by far has been widely practiced because of its simple fabrication process. Here we introduce a simple method to embed CNT inside the electrode while taking advantage of the bottom-contact process. The idea is to utilize a eutectic material as an electrode, which melts at low temperature so that CNT is not damaged while annealing to melt the electrode to embed CNT. The lowering of CNT/Au contact resistance upon annealing at mild temperature has been reported, but the electrode in these studies did not melt and CNT laid on the surface of electrode even after annealing. In our experiment, we used a eutectic Au/Al film that melts at 250$^{\circ}C$. After depositing CNT on the electrode made of an Au/Al thin film, we annealed the sample at 250$^{\circ}C$ in air to induce eutectic melting. As a result, Au-Al alloy grains formed, under which the CNT was embedded to produce a rigid and low resistance contact. The embedded CNT contact was as strong as to tolerate the ultrasonic agitation for 90 s and the current-voltage measurement indicated that the contact resistance was lowered by a factor of 4. By performing standard fabrication process on this CNT-deposited substrate to add another pair of electrodes bridged by CNT in perpendicular direction, we could fabricate a CNT cross junction. Finally, we could conclude that the eutectic alloy electrode is valid for CNT sensors by examine the detection of Au ion which is spontaneously reduced to CNT surface. The device sustatined strong washing process and maintained its detection ability.

• Nuclear Engineering and Technology
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• v.21 no.2
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• pp.89-98
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• 1989

The expanding copper mandrel test performed at three strain rates (3.2$\times$10E -5/s, 2.0$\times$10E-6/s and 1.2$\times$10E-7/s) over 553-873 K temperature range by varying the heating rates (8-1$0^{\circ}C$/s, 1-2$^{\circ}C$/s and 0.5$^{\circ}C$/s) in air and in vacuum (5$\times$10E-5 torr). The yield stress peak, the strain rate sensitivity minimum and the activation volume peaks could be explained in terms of the dynamic strain aging. The activation energy for dynamic strain aging obtained from the yield stress peak temperature and strain rate was 196 KJ/mol and this value was in good agreement with the activation energy for oxygen diffusion in $\alpha$-zirconium and Zircaloy-2 (207-220 KJ/mol). Therefore, oxygen atoms are responsible for the dynamic strain aging which appeared between 573 K and 673 K. The yield stress increase due to the oxidation was obtained by comparing the yield stress in air with that in vacuum and represented by the percentage increase of yield stress ( $\sigma$$^{a}$ $_{y}$ - $\sigma$$^{v}$ $_{y}$ / $\sigma$$^{v}$ $_{y}$ ). The slower the strain rate, the greater the percentage increase occurs. In order to estimate the yield stress of PWR fuel cladding material under the service environment, the yield stress in water was obtained by comparing the oxidation rate in air that in water assuming the relationship between the oxygen pick-up amount and the yield stress increase.