• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.190.1-190.1
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• 2015

Graphite has excellent mechanical and physical properties. It is known to advanced materials and is used to materials for molds, thermal treatment of furnace, sinter of diamond and cemented carbide tool etc. SiC materials are coated on the surface and holes of graphite to protect particles emitted from porous graphite with 5%~20% porosity and make graphite hard surface. SiC materials have high durability and thermal stability. Thermal CVD method is widely used to manufacture SiC thin films but high cost of machine investment and production are required. SiC thin films manufactured by Si reaction liquid and vapore with carbon are effective because of low cost of machine and production. SiC thin films made by vapor silicon infiltration into porous graphite can be obtained for shorter time than liquid silicon. Si materials are evaporated to the graphite surface in about $10^{-2}$ torr and high temperature. Si materials are melted in $1410^{\circ}C$. Si vapor is infiltrated into the surface hole of porous graphite and $Si_xC_y$ compound is made. $Si_x$ component is proportional to the Si vapor concentration. Si diffusion coefficient is estimated from quadratic equation obtained by Fick's second law. The steady stae is assumed. Si concentration variation for the depth from graphite surface is fitted to quadratic equation. Diffusion coefficient of Si vapor is estimated at about $10^{-8}cm^2s^{-1}$.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.497-497
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• 2013

Semiconducting amorphous InGaZnO (a-IGZO) has attracted significant research attention as improved deposition techniques have made it possible to make high-quality a-IGZO thin films. IGZO thin films have several advantages over thin film transistors (TFTs) based on other semiconducting channel layers.The electron mobility in IGZO devices is relatively high, exceeding amorphous Si (a-Si) by a factor of 10 and most organic devices by a factor of $10^2$. Moreover, in contrast to other amorphous semiconductors, highly conducting degenerate states can be obtained with IGZO through doping, yet such a state cannot be produced with a-Si. IGZO thin films are capable of mobilities greaterthan 10 $cm^2$/Vs (higher than a-Si:H), and are transparent at visible wavelengths. For oxide semiconductors, carrier concentrations can be controlled through oxygen vacancy concentration. Hence, adjusting the oxygen partial pressure during deposition and post-deposition processing provides an effective method of controlling oxygen concentration. In this study, we deposited IGZO thinfilms at optimized conditions and then analyzed the film's electrical properties, surface morphology, and crystal structure. Then, we explored how to generate IGZO thin films using DC magnetron sputtering. We also describe the construction and characteristics of a bottom-gate-type TFT, including the output and transfer curves and bias stress instability mechanism.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.339.1-339.1
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• 2014

In this paper we studied the application of inter-poly dielectric as silicon dioxide-like film was deposited by the higher energy assisting deposition (HEAD) process the modified CCP process, which enables low temperature (LT) process and improving film density. In these experiments the relative hydrogen concentration of $SiO_2$-like films deposited on silicon substrate were analyzed by the secondary ion mass spectroscopy (SIMS) and it was shown that our lower hydrogenated oxide (LHO) film prepared by HEAD process with the precursor contained the siloxane species had lower hydrogen concentration, $8{\times}10{\cdot}^{22}cm{\cdot}^3$ than that of the commercial undoped silicon glass (USG) film ($1{\times}10{\cdot}^{21}cm{\cdot}^3$) prepared by the high density plasma-chemical vapor deposition (HDP-CVD). We consider that the LHO film deposited by HEAD process used as high performance material into Flash memory devices.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.369.1-369.1
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• 2014

Au-functionalized $WO_3$ nanotubes were synthesized using ZnO nanowire templates. Transmission electron microscopy revealed the Au nanoparticles on the outer surface of a typical $WO_3$ nanotube ranged from 5 to 25 nm. The multiple networked Au-functionalized $WO_3$ nanotube sensors showed responses of 820-3, 924% in the $NO_2$ concentration range of 1-5 ppm at $300^{\circ}C$. These responses were approximately 5-12 fold higher than those observed for pristine $WO_3$ nanotube sensors over the same $NO_2$ concentration range. A model describing the gas sensing mechanism of Au-functionalized $WO_3$ nanotubes is discussed.

• 한국진공학회지
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• 제14권3호
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• pp.115-118
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• 2005

모델 고분자 미셀(서로 결합하거나, 결합하지 않는 두 경우)의 구조를 분석하기 위해 중성자 소각 산란(small angle neutron scattering)법을 이용하였다. 소수성 결합체의 응집수와 농도의 증가에 따른 정렬상태의 변화를 폴리에틸렌글라이콜(PEG, 6 K나 10 K고몰 분자량) 끝에 불화알킬그룹(pefluoroalkyl groups $(-(CH_2)_2C_OnF_{2n+1}$, (n = 6, 8,혹은 10)이 붙은 고분자용액을 이용하여 분석하였다. 결합체의 응집수는 소수성 말단기의 길이에 의해서만 주로 결정이 되고, 고분자의 농도나 온도에 의해 영향을 받지 않는다. 또한, 서로 결합하는 고분자 미셀과, 서로 결합하지 않는 고분자 미셀간에도 결합수에는 차이가 없다. 이러한 모델계는 농도가 증가함에 따라서 체심 입방구조로 정렬된다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.107-107
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• 2011

오늘 날 transparent conductive oxide는 다양한 분야에서 활용되고 있다. 최근에는 태양전지 분야에서도 많이 활용되고 있으며, 초기에는 transmittance 및 낮은 sheet resistance 특성을 가지는 ITO가 많이 활용되었지만 thin film solar cell와 같이 hydrogenation 공정에 약한 ITO보다는 Al-doped ZnO가 사용되기 시작하면서 많은 연구가 진행되고 있다. 본 연구에서는 thin film solar cell 및 silicon heterojunction solar cell에 적용 가능한 Al-doped ZnO에 관한 연구로써 a-Si:H의 Si-H bonds에 영향을 주지 않는 낮은 영역의 substrate temperature와 power로 Al-doped ZnO를 형성하고 상기 parameter에 따른 Al-doped ZnO의 특성 변화에 대해서 분석하였다. 특히 substrate temperature가 변화할수록 carrier concentration 및 sheet resistance가 많은 변화를 보였으며 이로 인하여 transmittance 특성이 온도에 따라 좋아지다가 너무 높은 온도에서는 오히려 좋지 않게 되었다. 이는 너무 높은 carrier concentration은 free carrier absorption에 의해 transmittance 특성을 오히려 좋지 않게 한다. 우리는 본 연구를 통해 92.677% (450 nm), 90.309% (545 nm), 94.333% (800 nm)의 transmittance를 얻을 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.401-401
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• 2011

In this work, we deposited Al2O3doped ZnO (AZO) thin films by direct current (DC) magnetron sputtering method with a $40^{\circ}$ tilted target, for application in the front layer of thin film solar cell. Wet chemical etching behavior of AZO films was also investigated. In order to optimize textured AZO films, oxalic acid ($C_2H_2O_4$)has been used as wet etchant of AZO film. In this experiment we used 0.001% concentration of oxalic acid various etching time, that showed an anisotropy in etching texture of AZO films. Electrical resistivity, Hall mobility and carrier concentration measurements are performed by using the Hall measurement, that are $6{\times}10^{-4}{\Omega}cm$, $20{\sim}25cm^2/V-s$ and $4{\sim}6{\times}10^{20}$, respectively.

• Bulletin of the Korean Chemical Society
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• 제32권3호
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• pp.939-942
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• 2011

Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from $400^{\circ}C$ to $700^{\circ}C$ in increments of $100^{\circ}C$ using a rapid thermal annealing method by vacuum furnace in vacuum ambient. The increase of annealing temperature contributed to the increase of the ordering and formation of aromatic rings in the carbon film. Consequently, with increasing annealing temperature the tribological properties of sputtered carbon films are deteriorated while the resistivity of carbon films significantly decreased from $4.5{\times}10^{-3}$ to $1.0{\times}10^{-6}\;{\Omega}-cm$ and carrier concentration as well as mobility increased, respectively. This behavior can be explained by the increase of sp2 bonding fraction and ordering $sp^2$ clusters in the carbon networks caused by increasing annealing temperature.

• 한국진공학회지
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• 제9권1호
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• pp.30-35
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• 2000

Indium-Tin Oxide (ITO) thin films were deposited on the commercial glass substrate by rf-magnetron sputtering. The ITO films with the thickness of 2,000~2,400 $\AA$ were prepared by changing the oxygen partial pressures of 2, 3, and 5%, as well as by changing the substrate temperature of $300^{\circ}C$ and $500^{\circ}C$. spectrophotometer, XRD, SEM, AFM, 4-point probe and Hall effect system were employed to characterize the ITO films. The optimum deposition conditions were the substrate temperature of $500^{\circ}C$ and oxygen partial pressure of 2-3%. At theses conditions, the ITO film showed the transmittance of 91%, the resistivity of $5.4\times10^{-3}\Omega$cm, the carrier concentration of $1.0\times10^{19}\textrm{cm}^{-3}$, and the carrier mobility of 150$\textrm{cm}^2$/Vsec. In XRD spectra, the (222) and (400) $In_2O_3$ planes were dominant under the optimum deposition conditions When the substrate was cleaned only by the method of ultrasonic cleaning without both pre-annealing and chemical treatment of the substrate, the ITO film exhibited the transmittance of 86%, the carrier concentration of $5.4\times10^{19}\textrm{cm}^{-3}$ and the mobility of 24$\textrm{cm}^2$/Vsec.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.213-213
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• 2010

Magnetic random access memory (MRAM), based on magnetic tunnel junction (MTJ) and CMOS, is one of the best semiconductor memories because it can provide nonvolatility, fast access time, unlimited read/write endurance, low operating voltage and high storage density. For the realization of high density MRAM, the etching of MTJ stack with good properties is one of a key process. Recently, there has been great interest in the MTJ stack using MgO as barrier layer for its huge room temperature MR ratio. The use of MgO barrier layer will undoubtedly accelerate the development of MTJ stack for MRAM. In this study, high-density plasma reactive ion etching of MgO films was investigated in an inductively coupled plasma of $Cl_2$/Ar gas mixes. The etch rate, etch selectivity and etch profile of this magnetic film were examined on vary gas concentration. As the $Cl_2$ gas concentration increased, the etch rate of MgO monotonously decreased and etch slop was slanted. The effective of etch parameters including coil rf power, dc-bais voltage, and gas pressure on the etch profile of MgO thin film was explored, At high coil rf power, high dc-bais voltage, low gas pressure, the etching of MgO displayed better etch profiles. Finally, the clean and vertical etch sidewall of MgO films was achieved using $Cl_2$/Ar plasma at the optimized etch conditions.