통합 검색 | Korea Science

이원호;김철수;이종철
- 한국진공학회:학술대회논문집
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- 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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- pp.196.2-196.2
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- 2016
The design and development procedures of SF6 gas circuit breakers are still largely based on trial and error through testing although the development costs go higher every year. The computation cannot cover the testing satisfactorily because all the real processes arc not taken into account. But the knowledge of the arc behavior and the prediction of thermal plasmas inside SF6 interrupters by numerical simulations are more useful than those by experiments due to the difficulties to obtain physical quantities experimentally and the reduction of computational costs in recent years. In this paper, in order to get further information into the interruption process of a SF6 self-blast interrupter, which is based on the combination of thermal expansion and arc rotation, gas flow simulations with a CFD-arc modeling are performed during the whole switching process such as high-current period, pre-current zero period, and current-zero period. Through the complete work, the temperature of residual arcs as well as the breakdown index after current zero should be a good criterion to predict the dielectric capability of interrupters.
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방선배;박종연
- 전기학회논문지
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- 제57권3호
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- pp.494-500
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- 2008
This paper presents the analyzed result of the series arc fault current by using the discrete wavelet transform. The series arcing is caused by a loose connection in series with the load circuit. The series arc current is limited to a moderate value by the resistance of the device connected to the circuit, such as an appliance or a lighting system. The amount of energy in the sparks from the series arcing is less than in the case of parallel arcing but only a few amps are enough to be a fire hazard. Therefore, it is hard to detect the distinctive difference between a normal current and a intermittent arc current. This paper, presents the variation of the ratio of peak values and RMS values of the series arc fault current, and proposes the novel series arc fault detecting method by using the discrete wavelet transform. Loads such as a CFL lamp, a vacuum cleaner, a personal computer, and a television, which has the very similar normal current with the arc current, were selected to confirm the novel method.
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신기수;김재영
- 한국진공학회지
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- 제7권2호
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- pp.155-160
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- 1998
256M DRAM급에 해당하는 0.25$\mu\textrm{m}$의 회로선 폭을 가공하기 위해 Arc layer & DUV resist 사용이 필수적이다. Poly-Si 식각시 Arc layer 적용여부 및 resist 종류에 따른 차이 를 TCP-9408 etcher(Lam Research Co.)에서 $Cl_2/O_2, Cl_2/N_2, Cl_2$/HBr 3가지 gas chemistry 를 변화시키면서 조사하였다. 동일한 식각 조건에서 DUV resist사용의 경우에 I-line resist 에 비해 식각 profile이 profile이 positive하고 CD gain도 크게 나왔다. 이것은 resist손실에 의한 polymer생성의 증가가 식각시 측벽 보호막을 강화시키기 때문이다. Arc layer 적용의 경우 Arc layer 식각시 생기는 fluorine계 polymer가 poly-Si 식각시 mask역할을 하므로 CD gain이 증가하는 것으로 나타났다. Gas chemistry에 의한 영향은 $Cl_2/O_2$의 경우가 식각 시 polymer형성을 촉진시켜 positive profile 및 CD gain을 초래하였다. $Cl_2$/HBr의 경우에는 profile이 vertical 하였고 CD gain도 거의 없었다. 또한 dense pattern 과 isolated pattern 사이의 profile 및 CD 차이도 가정 작게 나타났다. HBr gas 사용이 식각시 pattern density 에 따른 측벽 보호막 형성의 불균일성을 최소화 시켜 양호한 특성을 보여주었다.
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