• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.265-265
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• 2012

The adsorption of molecular $NH_3$ on rutile $TiO_2(110)-1{\times}1$ surfaces was investigated using a temperature-programmed desorption (TPD) technique combined with a molecular beam apparatus. A quantitative investigation into the TPD spectra of $NH_3$ was made for $NH_3$ adsorbed on two kinds of rutile $TiO_2(110)-1{\times}1$ surfaces with the oxygen vacancy ($V_O$) concentration of ~0% (p-$TiO_2(110)$) and ~5% (r-$TiO_2(110)$), respectively. On both surfaces, non-dissociative adsorption of $NH_3$ was inferred from a quantitative analysis on the amount of adsorbed $NH_3$ and those desorbed. With increasing coverage, the monolayer desorption feature shifted from 400 K toward lower temperatures until it saturates at 160 K, suggesting a repulsive nature in the interaction between $NH_3$ molecules. At the very low coverage regime, the desorption features were found to extend up to 430 K and 400 K on p-$TiO_2(110)$ and p-TiO(110), respectively. As a result, the saturation coverage of monolayer of $NH_3$ was higher on the p-$TiO_2(110)$ surface than on the p-TiO(110) by about 10%. The desorption energy ($E_d$) of $NH_3$ obtained by inversion of the Polanyi-Wigner equation indicated that the difference between the $E_d$'s of $NH_3$ (that is, $E_d(on\;p-TiO_2(110)$) - $E_d$(on p-TiO(110)) was 14 kJ/mol at ${\theta}(NH_3)=0$ and decreased to 0 as the coverage approached to a monolayer. The observed adsorption behavior of $NH_3$ was interpreted using an interaction model between $NH_3$ and surface defects on $TiO_2$ such as VO's and $Ti^{3+}$ interstitials.

• Journal of the Korean Chemical Society
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• v.30 no.1
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• pp.27-32
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• 1986

Electrical conductivities of NiO-$Y_2O_3$ systems containing 0.8, 1.6, and 3.2 mol% NiO have been measured in the temperature range of 400 to 1100$^{\circ}$C at $PO_2$'s of 1 ${\times}10^{-5}$ to 2 ${\times}10^{-1}$ atm. Plots of $log\sigma$ vs 1/T at constant $PO_2$'s are found to be linear with an inflection at temperature around 650$^{\circ}$C. The slopes are steeper in the high temperature region above 650$^{\circ}$C than in the low temperature region below 650$^{\circ}$C. The average activation energies are 41.8kcal/mol in the high temperature region and 12.5kcal/mol in the low temperature region. $PO_2$'s dependence value, 1/n, is 1/5.1~1/5.4 in the high temperature region and 1/5.9~1/6.2 in the low temperature region. The NiO-$Y_2O_3$ systems are found to be an electronic p-type semiconductor. The predominant defects in the systems are believed to be triply ionized yttrium vacancy in the high temperature region and doubly ionized oxygen interstitial in the low temperature region. Ionic contribution to the total conductivity is found from ${\sigma}^{\propto}PO_2$ in the temperatures below 650$^{\circ}$C.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.249-254
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• 2023

La_0.7-xCe_xSr_0.3MnO₃ specimens were fabricated by a solid state reaction method and structural and electrical properties with variation of Ce⁴⁺ contents were measured. All specimens exhibited a polycrystalline rhombohedral crystal structure, and the (110) peaks were shifted to low angle side with increasing the amount of Ce⁴⁺ contents. As Ce⁴⁺ ions with different ion radii and charges are substituted with La³⁺ ions, electrical properties are thought to be affected by changes in the double exchange interaction between Mn³⁺-Mn⁴⁺ ions due to distortion of the unit lattice, a decrease in oxygen vacancy concentration, and an increase in lattice defects. Resistivity gradually decrease as the amount of Ce⁴⁺ added increased, and negative temperature coefficient of resistance (NTCR) properties were shown in all specimens. In the La_0.5Ce_0.2Sr_0.3MnO₃ specimens, electrical resistivity, TCR and B-value were 31.8 Ω-cm, 0.55%/℃ and 605 K, respectively.