• JSTS:Journal of Semiconductor Technology and Science
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• v.9 no.2
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• pp.117-123
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• 2009

$Pb_{x}Cd_{1-x}S$ films are prepared in the composition range of 0.05${\leq}x{\leq}$0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg=0.41 eV) with CdS (Eg=2.4 eV)

• Electrical & Electronic Materials
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• v.1 no.3
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• pp.269-277
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• 1988

P형 Si(100)로 제작한 MOS 커패시터에 $Co^{60}$-.gamma.선을 주사한 후 고주파 C-V특성 곡선으로 부터 방사선 조사에 의해 유발된 산화막안의 트랩전하의 거동 및 Si- $SiO_{2}$계면에서의 트랩밀도 분포의 변화를 검토하였다. 산화막 느랩전하는 .gamma.선 흡수선량 증가와 더불어 증가하다가 $10^{7}$ rad 부근에서부터 서서히 포화하는 경향이 나타났으며 게면트랩밀도의 분포모양은 흡수선량의 증가와 더불어 전형적인 이그러진 W자형에서 넓혀진 V자형 분포로 변화하였으나 최소값은 항상 진성페르미준위( $E_{i}$)부근에 있었으며 그 밀도는 1.0*$10^{11}$~7.5*$10^{11}$[개/$cm^{2}$/eV]로 계산되었다. 또한, 일정 바이어스전압하에서의 조사선량에 따른 $V_{fb}$ 의 변화는 현저하지는 않았으나 바이어스 전압을 +12V로 인가할 때 변화방향의 반전상태가 관측되었다. 그 이유로는 Si측의 계면 부근에서 일어난 눈사태 전자가 산화막내로 주입됨에 따라 도너형 양전하의 수가 감소되기 때문으로 추정되었다.되었다.

• Bulletin of the Korean Chemical Society
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• v.17 no.3
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• pp.274-278
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• 1996

Vanadium oxide-zirconia catalysts were prepared by dry impregnation of powdered Zr(OH)4 with aqueous solution of NH4VO3. The characterization of prepared catalysts was performed using 51V solid state NMR, XRD, and DSC. The addition of vanadium oxide up to 9 mol% to zirconia shifted the phase transitions of ZrO2 from amorphous to tetragonal toward higher temperatures due to the interaction between vanadium oxide and zirconia. On the basis of results of XRD and DSC, it is concluded that the content of V2O5 monolayer covering most of the available zirconia was 9 mol%. The crystalline V2O5 was observed only with the samples containing V2O5 content exceeding the formation of complete monolayer (9 mol%) on the surface of ZrO2.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.299-299
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• 2016

SiC는 넓은 에너지갭 (Eg=~3.4 eV)을 갖는 반도체로써, 고전압, 고온에서 동작이 가능하여 기존의 Si기반의 파워디바이스를 대체하기 위한 물질로 많은 연구가 이루어지고 있다. 파워 디바이스의 성능 향상을 위해서는 기판과 절연체 사이의 계면에 생성되는 계면 결함을 감소시켜야 한다. 따라서 본 연구에서는 SiC 기판에 high-k 물질인 HfO2를 증착하여 HfO2/SiC 계면에 유도된 결함을 분석하고 이를 감소시킬 수 있는 방법에 대한 연구를 수행하였다. HfO2 박막은 atomic-layer-deposition (ALD) 방법을 이용하여 SiC 기판 위에 $200^{\circ}C$에서 증착하였다. HfO2 박막 증착 후 NH3 분위기에서 rapid thermal annealing 방법을 이용하여 $600^{\circ}C$에서 1분 동안 열처리 진행하였다. Current-voltage (I-V) 측정을 통해 열처리 전 HfO2/SiC의 절연파괴 전압이 약 8.3 V 임을 확인하였다. NH3 열처리 후 HfO2/SiC의 절연파괴 전압이 10 V로 증가하였으며 누설 전류가 크게 감소하는 것을 확인하였다. 또한 capacitance-voltage (C-V) 측정을 통해 열처리 후 flat band voltage가 negative 방향에서 positive 방향으로 이동함을 확인하였고, 이를 통해 NH3 열처리 방법이 HfO2/SiC 계면에 존재하는 결함을 감소시킬 수 있음을 확인하였다. 전자 구조상의 conduction band edge에 존재하는 결함 준위를 분석하기 위해 x-ray absorption spectroscopy (XAS) 분석을 실시하였고, 열처리 전 HfO2/SiC 계면에 많은 결함 준위가 존재함을 확인하였으며, x-ray photoelectron spectroscopy (XPS) 분석을 통해 이 결함 준위가 oxygen deficiency state과 관련됨을 알 수 있었다. NH3 열처리 후 결과와 비교해보면, oxygen deficiency state가 감소함을 확인하였으며 이로 인해 conduction band edge에 존재하는 결함 준위가 감소함을 알 수 있었다. 따라서, NH3 열처리 방법을 이용하여 HfO2/SiC 계면에 존재하는 결함을 감소시킬 수 있으며, HfO2/SiC의 물리적, 전기적 특성을 향상시킬 수 있다는 결과를 도출하였다.

• Publications of The Korean Astronomical Society
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• v.32 no.1
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• pp.197-199
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• 2017

Using the InfraRed Camera (IRC) on board the infrared astronomical satellite AKARI we study the ${3.3{\mu}m}$ polycyclic aromatic hydrocarbon (PAH) feature and its connection to active galactic nucleus (AGN) properties for a sample of 54 hard X-ray selected bright AGN, including both Seyfert 1 and Seyfert 2 type objects. The sample is selected from the 9-month Swift/BAT survey in the 14-195 keV band and all of the sources have known neutral hydrogen column densities ($N_H$). The ${3.3{\mu}m}$ PAH luminosity ($L_{3.3{\mu}m}$) is used as a proxy for star-formation (SF) activity and hard X-ray luminosity ($L_{14-195keV}$) as an indicator of the AGN power. We explore for possible difference of SF activity between type 1 (un-absorbed) and type 2 (absorbed) AGN. We use several statistical analyses taking the upper-limits of the PAH lines into account utilizing survival analysis methods. The results of our log($L_{14-195keV}$) versus log($L_{3.3{\mu}m}$) regression shows a positive correlation and the slope for the type 1/unobscured AGN is steeper than that of type 2/obscured AGN at a $3{\sigma}$ level. Also our analysis shows that the circum-nuclear SF is more enhanced in type 2/absorbed AGN than type 1/un-absorbed AGN for low $L_{14-195keV}$ luminosity/low Eddington ratio AGN, while there is no significant dependence of SF activity on the AGN type in the high $L_{14-195keV}$ luminosities/Eddington ratios.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• Journal of Korean Society for Atmospheric Environment
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• v.26 no.1
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• pp.1-9
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• 2010

In this study, the selective catalytic reduction of $NO_x$ with ammonia was carried out in a filter bag support reactor. The experiments were performed by powder type $MnO_x$ and $V_2O_5$/$TiO_2$ catalyst at low temperature between 130 and $250^{\circ}C$. Also, the effect of $SO_2$ and $H_2O$ on the NO conversion was investigated under our test conditions. The powder type catalysts were analyzed by X-ray photoelectron spectrum (XPS), X-ray diffraction(XRD), scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA). It was observed that NO removal efficiency of the powder type $V_2O_5$/$TiO_2$ catalyst was 85% at low temperature($200^{\circ}C$) under presence of oxygen and that of $MnO_x$ was 50% at the same condition. The powder type $V_2O_5$/$TiO_2$ catalyst, in conclusion, was found to be available for SCR reaction in a filter bag support system.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2017.05a
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• pp.153-153
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• 2017

The application of the coating supports the mechanical characteristics of the implant, and various materials and coatings are currently being used in the implant in a way to accelerate adhesion. Especially, plasma electrolytic oxidation (PEO) coating has been proposed continually with good surface treatment of titanium alloys. Also, the PEO process can incorporate Ca and P ions on the titanium surface through variables varied factor. PEO process for bioactive surface has carried out in electrolytes containing Ca and P ions. Natural bone is composed of mineral elements such as Mg, Si, Zn, Sr, and Mn, etc. Especially, Mg and Si of these elements play role in bone formation and growth after clinical implantation of bio-implants. In this study, corrosion charateristics of PEO-treated Ti-6Al-4V alloy in solution containing Si and Mg ions has been investigated using several experimental techniques. The PEO-treated surfaces were identified by X-ray diffraction, using a diffractometer (XRD, Philips X' pert PRO, Netherlands) with Cu $K{\alpha}$ radiation. The morphology was observed by field-emission scanning electron microscopy (FE-SEM, Hitachi 4800, Japan) and energy-dispersive X-ray spectroscopy (EDX, Oxford ISIS 310, England). The potentiodynamic polarization and AC impedance tests for electrochemical degradations were carried out in 0.9% NaCl solution at similar body temperature using a potentiostat with a scan rate of 1.67mV/s and potential range from -1500mV to + 2000mV.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.487-487
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• 2011

Recently graphene has emerged as a fascinating 2D system in condensed-matter physics as well as a new material for the development of nanotechnology. The unusual electronic band structure of graphene allows it to exhibit a strong ambipolar electric field effect with high mobility. These properties lead to the possibility of its application in high-performance transparent conducting films (TCFs). Compared to indium tin oxide (ITO) electrodes, which have a typical sheet resistance of ${\sim}60{\Omega}$/sq and ~85 % transmittance in the visible range (400?900 nm), the CVD-grown graphene electrodes have a higher/flatter transmittance in the visible to IR region and are more robust under bending. Nevertheless, the lowest sheet resistance of the currently available CVD graphene electrodes is higher than that of ITO. Here, we report an ingenious strategy, irradiation of MeV electron beam (e-beam) at room temperature under ambient condition, for obtaining size-homogeneous gold nanoparticle decorated on graphene. The nano-particlization promoted by MeV e-beam irradiation was investigated by transmission electron microscopy, electron energy loss spectroscopy elemental mapping, and energy dispersive X-ray spectroscopy. These results clearly revealed that gold nanoparticle with 10 ~ 15 nm in mean size were decorated along the surface of the graphene after 1.5 MeV-e-beam irradiation. A chemical transformation and charge transfer for the metal gold nanoparticle were systematically explored by X-ray photoelectron spectroscopy and Raman spectroscopy. This approach advances the numerous applications of graphene films as transparent conducting electrodes.

• Journal of The Korean Astronomical Society
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• v.34 no.4
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• pp.309-311
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• 2001

Strong thermal X-ray emission, called Galactic Ridge X-ray Emission, is observed along the Galactic plane (Koyama et al. 1986). The origin of hot ($\~$7 keV) component of GRXE is not known, while cool ($\~$0.8 keV) one is associated with supernovae (Kaneda et al. 1997, Sugizaki et al. 2001). We propose a possible mechanism to explain the origin; locally strong magnetic fields of $B_{local}\;\~30{\mu}G$ heat interstellar gas to $\~$7 keV via magnetic reconnection (Tanuma et al. 1999). There will be the small-scale (< 10 pc) strong magnetic fields, which can be observed as $(B)_{obs} \;\~3{\mu}G$ by integration of Faraday Rotation Measure, if it is localized by a volume filling factor of f $\~$ 0.1. In order to examine this model, we solved three-dimensional (3D) resistive magnetohydrodynamic (MHD) equations numerically to examine the magnetic reconnect ion triggered by a supernova shock (fig.l). We assume that the magnetic field is Bx = 30tanh(y/20pc) $\mu$G, By = Bz = 0, and the temperature is uniform, at the initial condition. We put a supernova explosion outside the current sheet. The supernova-shock, as a result, triggers the magnetic reconnect ion, and the gas is heatd to > 7 keV. The magnetic reconnect ion heats the interstellar gas to $\~$7 keV in the Galactic plane, if it occurs in the locally strong magnetic fields of $B_{local}\;\~30{\mu}G$. The heated plasma is confined by the magnetic field for $\~10^{5.5} yr$. The required interval of the magnetic reconnect ions (triggered by anything) is $\~$1 - 10 yr. The magnetic reconnect ion will explain the origin of X-rays from the Galactic ridge, furthermore the Galactic halo, and clusters of galaxies.