• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.114-114
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• 2010

In this study, structural properties and photoluminescent characteristics of thin film rhombohedral zinc orthosilicate doped with manganese ($Zn_2SiO_4:Mn$) were investigated. The $Zn_2SiO_4:Mn$ films showed a pronounced absorption edge in the near ultraviolet wavelength region and a high optical transparency in the visible spectral range. The maximum transmittance reached 0.922 at 597 nm, which was very close to the transmittance of the fused quartz substrate alone (0.935). The $Zn_2SiO_4:Mn$ films were composed of rhombohedral polycrystalline grains with random crystallographic orientation. The broad-band photoluminescence emission peaked at around 525 nm was observed from the $Zn_2SiO_4:Mn$ films, which was ascribed to the radiative relaxation from the $^4T_1$ lowest excitation state to $^6A_1$ ground state of 3d5 electrons in divalent manganese ion. The excitation band exhibited a peak maximum at 259 nm in the near ultraviolet region, which was considered to be associated with the charge transfer transition of divalent Mn ion in the $Zn_2SiO_4$ system.

• Korean Journal of Materials Research
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• v.18 no.11
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• pp.623-627
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• 2008

For possible applications as luminescent materials for white-light emission using UV-LEDs, $Ba_2Mg(PO_4)_2:Eu^{2+}$ phosphors were prepared by a solid state reaction. The photoluminescence properties of the phosphor were investigated under ultraviolet ray (UV) excitation. The prepared phosphor powders were characterized to from a single phase of a monoclinic crystalline structure by a powder X-ray diffraction analysis. In the photoluminescence spectra, the $Ba_2Mg(PO_4)_2:Eu^{2+}$ phosphor showed an intense emission band centered at the 584 nm wavelength due to the f-d transition of the $Eu^{2+}$ activator. The optimum concentration of $Eu^{2+}$ activator in the $Ba_2Mg(PO_4)_2$ host, indicating the maximum emission intensity under the excitation of a 395 nm wavelength, was 5 at%. In addition, it was confirmed that the $Eu^{2+}$ ions are substituted at both $Ba^{2+}$ sites in the $Ba_2Mg(PO_4)_2$ crystal. On the other hand, the critical distance of energy transfer between $Eu^{2+}$ ions in the $Ba_2Mg(PO_4)_2$ host was evaluated to be approximately 19.3 A. With increasing temperature, the emission intensity of the $Ba_2Mg(PO_4)_2$:Eu phosphor was considerably decreased and the central wavelength of the emission peak was shifted toward a short wavelength.

• Journal of Korean Ophthalmic Optics Society
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• v.13 no.3
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• pp.73-77
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• 2008

Purpose: This research is that prepare amorphous or crystalline ZnO thin films with pure strong UV emission on soda-lime-silica glass (SLSG) substrates by low-temperature annealing. Methods: Growth characteristic and optical properties of the amorphous or nano-crystalline ZnO thin films prepared on soda - lime - silica glass substrates by chemical solution deposition at 100, 150, 200, 250 and $300^{\circ}C$ were investigated using X-ray diffraction analysis, ultraviolet - visible - near infrared spectrophotometer, and photoluminescence. Results: The films exhibited an amorphous pattern even when finally annealed at $100^{\circ}C{\sim}200^{\circ}C$ for 60 min, while crystalline ZnO was obtained by prefiring at 250 and $300^{\circ}C$. The photoluminescence spectrum of amorphous ZnO films shows a strong NBE emission, while the visible emission is nearly quenched. Conclusions: These results indicate it should be possible to cheaply and easily fabricate ZnO-based optoelectronic devices at low temperature, below $200^{\circ}C$, in the future.

• Journal of the Korean Ceramic Society
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• v.44 no.5 s.300
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• pp.155-159
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• 2007

Blue light-emitting phosphors having the excitation spectrum range of the medium-long ultraviolet ($280nm{\sim}400nm$) have been prepared by solid state reaction method. As a starting material the natural alkaline feldspar powder produced from the domestic mine field in Buyeo, Chungnam-do. The photoluminescence characteristics and crystal structures have been analyzed for the phosphor samples. The powder mixture of the natural alkaline feldspar and the rare-earth oxide was calcined at $800{\sim}1000^{\circ}C\;for\;3{\sim}4h$ in air. The calcined samples we fully ground at room temperature and then heat-treated in the mild reducing gas atmosphere of $5%H_2-95%N_2$ mixture at $1100{\sim}1150^{\circ}C\;for\;3{\sim}4h$. The natural alkaline feldspar material consists of the monoclinic orthoclase ($KAlSi_3O_8$) and the triclinic albite ($NaAlSi_3O_8$) phases. At the $0.5wt%Eu_2O_3$ addition the PL spectrum showed the maximum intensity and with further increase of $Eu_2O_3$ the PL intensity decreased. The albite phase disappeared in the $Eu_2O_3$ doped phosphors. The effect of the co-doped activator on the PL characteristics have been also discussed.

• Journal of the Korean institute of surface engineering
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• v.48 no.3
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• pp.82-86
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• 2015

$Dy^{3+}$- and $Eu^{3+}$-codoped $CaMoO_4$ Phosphors were synthesized by using the solid-state reaction method. The crystal structure, morphology, and optical properties of the resulting phosphor particles were investigated by using the X-ray diffraction, field-emission scanning electron microscopy, and photoluminescence spectroscopy. XRD patterns exhibited that all the synthesized phosphors showed a tetragonal system with a main (112) diffraction peak, irrespective of the content of $Eu^{3+}$ ions. As the content of $Eu^{3+}$ ions increased, the grains showed a tendency to agglomerate. The excitation spectra of the synthesized powders were composed of one strong broad band centered at 305 nm in the range of 220 - 350 nm and several weak peaks in the range of 350 - 500 nm resulting from the 4f transitions of activator ions. Upon ultraviolet excitation at 305 nm, the yellow emission line due to the $^4F_{9/2}{\rightarrow}^6H_{13/2}$ transition of $Dy^{3+}$ ions and the main red emission spectrum resulting from the $^5D_0{\rightarrow}^7F_2$ transition of $Eu^{3+}$ ions were observed. With the increase of the content of $Eu^{3+}$, the intensity of the yellow emission band gradually decreased while that of the red emission increased. These results indicated that the emission intensities of yellow and red emissions could be modulated by changing the content of the $Dy^{3+}$ and $Eu^{3+}$ ions incorporated into the host crystal.

• Korean Journal of Materials Research
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• v.12 no.9
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• pp.761-766
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• 2002

Fine $LaPO_4$:Tb phosphor particles with spherical shape were prepared by spray pyrolysis. The influence of the precursor type of phosphorous such as ($NH_4$)$_2$$HPO_4$, $NH_4$$H_2$$PO_4$, ($NH_4$)$_3$$PO_4$ and $H_3$$PO_4$ on the morphology and brightness of particles was investigated. As-prepared particles by spray pyrolysis had spherical shape when ($NH_4$)$_2$ $HPO_4$ and $NH_4$$H_2$$PO_4$ were used as the precursor of phosphorous. The precursor type of phosphorous affected the photoluminescence intensity of $LaPO_4$:Tb phosphor particles, but not significant. With changing the content of activator(Tb) and excess of phosphorous, the optimal composition giving the highest photoluminescence intensity was found. The spherical morphology of prepared $LaPO_4$:Tb particles was completely maintained even after the posttreatment up to $1050^{\circ}C$. When the posttreatment temperature was over $1100^{\circ}C$, the particles did not have the spherical shape anymore. However, the highest photoluminescence intensity of prepared $LaPO_4$:Tb particles was obtained at $1050^{\circ}C$. The photoluminescence characteristics of prepared $_LaPO4$:Tb under the vacuum ultraviolet(VUV) illumination was comparable with that of the commercial $Zn_2$$V_4$:Mn and (La,Ce)PO$_4$:Tb phosphor particles. At the optimal condition, the decay time of prepared spherical $LaPO_4$:Tb phosphor particles was about 6.8ms.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.22-22
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• 2003

Studies on the optical properties related to the built-in internal field and the carrier localization present in various GaN-based structures are essential not only for the physical interest but in designing practical visible and ultraviolet light emitting device applications with better performance and quantum efficiency. We report on the optical characteristics of various dimensional GaN-based structures such as (i) GaN self-assembled quantum dots grown in Stranski-Krastanov mode (OD), vertically-aligned GaN nanorods (1D), graded-In-content InGaN quantum wells (2D), laterally-overgrown GaN pyramids (3D), and GaN epilayers grown on various substrates. We used a wide variety of optical techniques, such as photoluminescence (PL), PL excitation, micro-PL, cathodoluminescence, optically-pumped stimulated emission, and time-resolved PL spectroscopy. An overview and comparison of the optical characteristics of the above GaN-based structures will be given.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.122-122
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• 2003

In recent years, there has been increasing interest in quasi one-dimensional nanostructural systems, because of their numerous potential applications in various areas, such as materials sciences, electronics, optics, magnetism and energy storage. Specifically, zinc oxide (ZnO) is recognized as one of the most promising oxide semiconductor materials, because of its good optical, electrical, and piezoelectrical properties. The ZnO nanorods were synthesized using vapor-solid (VS) mechanism on soda lime glass substrate without the presence of metal catalyst. ZnO nanorods were prepared thermal evaporation of a Zn powder at 500. As-fabricated ZnO nanorods had an average diameter and length of 40nm and 3$\mu\textrm{m}$. Transmission electron microscopy revealed that the ZnO nanorods were single crystalline with the growth direction perpendicular to the (101) lattice plane. The influences of reaction time on the formation of the ZnO nanorods were investigated. The Photoluminescence measurements showed that the ZnO nanorods had a strong ultraviolet emission at around 380nm and a green emission at around 500nm.

• Journal of Integrative Natural Science
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• v.3 no.3
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• pp.133-137
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• 2010

New synthetic route and characterization of alkyl-capped nanocrystalline silicon (R-n-Si) were achieved from the reaction of silicon tetrachloride with sodium/benzophenone ketal reducing agent followed by n-butyllithium. Surface of silicon nanoparticles was derivatized with butyl group. Effect of oxidation of silicon nanoparticle with benzophenone was investigated for their stabilization. Optical characteristics of silicon nanoparticles were characterized by fourier transform infrared spectroscopy (FT-IR), ultraviolet-visible spectroscopy (UV-vis), and photoluminescence (PL) spectroscopy. Butyl-capped silicon nanoparticles exhibited an emission band at 410 nm with excitation wavelength of 360 nm. Average size of n-butyl-capped silicon nanoparticles was obtained by particle size analyzer (PSA) and transmission electron microscopy (TEM). Average size of n-butyl-capped Si nanoparticles was about 6.5 nm.

• Journal of Information Display
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• v.1 no.1
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• pp.35-41
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• 2000

Manganese-doped $Zn_2SiO_4$ phosphors well known as a green emitter with high luminescence efficiency were prepared by the homogeneous precipitation method, and their photoluminescence properties under vacuum-ultraviolet (VUV) excitation were investigated. $Zn_2SiO_4$:Mn phosphors obtained by this method have exhibited a high luminance of property and a spherical shape of particles. In particular, the green emission intensity of zinc orthosilicate prepared as containing around 2 mole% of manganese was much stronger than that of the commercial $Zn_2SiO_4$:Mn phosphor, while the decay time was longer. However, addition of $Al^{3+}$ and $Li^+$ into $Zn_2SiO_4$:Mn composition has significantly diminished the decay time of the phosphor without much degradation of the emission intensity.