• E2M - 전기 전자와 첨단 소재
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• 제7권1호
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• pp.25-31
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• 1994

Properties of oxynitride films reoxidized by $N_2{O}$ gas after thermal oxidation and $N_2{O}$ oxide films directly oxidized by using $N_2{O}$ gas on the bare silicon wafer have been studied. From the AES analysis, nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2{O}$ oxide has observed. $N_2{O}$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces of Si/oxynitride and Si/$N_2{O}$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of N20 oxide and oxynitride films have somewhat higher than those of thermal $SiO_2{O}$, $N_2{O}$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.

• 한국재료학회지
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• 제10권7호
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• pp.459-463
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• 2000

순수한 동적 결합반응이고 전하 누적이 없는 이온 임플란테이션, 새로운 재료 개발 등에 음이온을 직접 사용하는 새로운 연구가 진행되고 있으며, 이러한 관점에서 새로운 고체상의 Cs이온 법이 실험실 규모로 연구되고 있다. 본 논문에서는 음이온 Cs gun으로 DLC 박막을 실리콘 위에 제조하였다. 이 시스템은 가스가 필요없으므로, 고 진공에서 증착이 일어난다. C(sup)-빔 에너지는 80~150eV 사이에서 조절이 우수하였다. Raman 분석결과 박막의 DLC 지수, 즉$sp^3$비율은 이온 에너지 증가에 따라 증가하였으며, 미소 경도값 또한 7에서 14GPa로 증가하였다. DLC박막의 표면 평균거칠기(Ra)는 ~1$\AA$정도로 아주 매끈하였으며, 불순물이 내재되지 않는 박막을 얻을 수 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1993년도 하계학술대회 논문집 B
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• pp.1295-1297
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• 1993

Properties of oxynitride films oxidized by $N_2O$ gas after thermal oxidation and $N_2O$ oxide films directly oxidized using $N_2O$ gas on the bare silicon wafer have been studied. Through the AES analysis, Nitrogen pile-up at the interface of Si/oxynitride and Si/$N_2O$ oxide has observed. Also, it could be presumed that there are differences in the mechanism of the growth of film by observing film growth. $N_2O$ oxide and oxynitride films have the self-limited characteristics. Therefore, it will be possible to obtain ultra-thin films. Nitrogen pile-up at the interfaces Si/oxynitride and Si/$N_2O$ oxide strengthens film structure and improves dielectric reliability. Although fixed charge densities and interface trap densities of $N_2O$ oxide and oxynitride films has somewhat higher than those of thermal $SiO_2,\;N_2O$ oxide and oxynitride films showed improved I-V characteristics and constant current stress.