• Journal of Welding and Joining
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• v.11 no.3
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• pp.22-33
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• 1993

Arc sensor is indispensable to arc welding robot systems for compensating the joint misalignment such as mismatch of the workpiece, ill-conditioned positioner and thermal deformation during welding. Furthermore, the amount of these mismatches cannot be preivously expected, and changes from time to time. There are many kinds of seam trackers for correcting the welding path of the robot, where non-contact type sensors arc prevalently used in arc welding robot systems. In this study, an arc sensor was developed for GMA and FCA welding robot system. Since the arc sensor uses the arc characteristics during welding, the operating principle of the arc sensor must be adjusted according to the welding condition. Especially in GMA welding with the $CO_{2}$ shielding gas, the welding arc is not stable because of the short circuit and non-axial globular transfer mode of the molten droplet. In this study, the 2nd order least square curve fitting algorithm was adopted and the applicability of this algorithm was investigated for robot welding systems. For easy usage of the arc sensor, the operating parameters for arc sensor were limited to eight which can be easily determined by the operator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.66-69
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• 1997

The p-GaN fins doped with the impurity of Zn were grown on n-GaN films to prevent the defects from the lattice mismatch with sapphire substrates by HVPE. For growth of the high quality n-GaN, the optimized conditions were at first deduced from the results of various HCI gas flow rates and growth temperatures. On the basis of these conditions, p-GaN films were grown and investigated of the characteristics. The FWHM of the double crystal rocking curve of n-GaN was decreased and the hexagonal phases on the surface of GaN films were tend to be vivid with the inoement of HCI gas flow rates. Finally the n-type GaN films with FWHM of 648arcsec were obtained at 10cc/min of HCI gas. As the GaN films were grown with the above conditions, Zn was introduced in the form of vapor as a dopant for p-GaN films. But when Zn vaporized at 77$0^{\circ}C$ was doped to the films, the crystallites of Zn were distributed uniformly on the surface of the GaN film due to the over-doped.

• Journal of the Korean Institute of Telematics and Electronics
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• v.26 no.11
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• pp.1672-1678
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• 1989

Major problems preventing the device-quality GaAs/Si heterostructure are the lattice mismatch of about 4% and difference in thermal expansion coefficient by a factor of 2.64 between Si and GaAs. Ge is a good candidate for the buffer layer because its lattice parameter and thermal expansion coefficient are almost the same as those of GaAs. As a first step toward developing heterostructure such as GaAs/Ge/Si entirely by a home-built PAE (plasma-assisted epitaxy), Ge films have been deposited on p-type Si (100)substrate by the plasma assisted evaporation of solid Ge source. The characteristics of these Ge/Si heterostructure were determined by X-ray diffraction, SEM and Auge electron spectroscope. PAE system has been successfully applied to quality-good Ge layer on Si substrate at relatively low temperature. Furthermore, this system can remove the native oxide(SiO2) on Si substrate with in-situ cleaning procedure. Ge layer grown on Si substrate by PAE at substrate temperature of 450\ulcorner in hydrogen partial pressure of 10mTorr was expected with a good buffer layer for GaAs/Ge/Si heterostructure.

• Asian Pacific Journal of Cancer Prevention
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• v.14 no.3
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• pp.1995-1998
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• 2013

Objective: To study the expression of the mismatch repair proteins hMSH2 and nm23 in sporadic colorectal cancer, determine any inter-relationship, and further investigate any clinical significance. Methods: Expression of hMSH2 and nm23 proteins was assessed in 87 colorectal cancer tissues by SP immunohistochemistry, with analysis of survival using follow-up data. Results: In the sporadic colorectal cancer tissues, nm23 protein expression appeared independent of the histological type (P>0.05), but correlated with the invasion depth and lymphatic metastasis (P<0.05). In contrast, hMSH2 protein expression was not significantly correlated with these clinicopathologic features (P>0.05), although it positively correlated with that of nm23 protein in the sporadic colorectal cancers (rs=0.635, P<0.05). Combined expression of the two was found to be related with invasion depth, lymphatic metastasis and prognosis of sporadic colorectal cancer (P<0.05). Conclusion: nm23 protein level was related with the degree of malignancy, and could be used as an index to predict the invasion and metastasis potential. The expression of hMSH2 protein is positively correlated that of nm23 protein, and the combined expression of the two has certain guiding significance for the prognosis of sporadic colorectal cancer.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1638-1641
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• 2008

We have investigated the effectiveness of a gravure printing method for the fabrication of organic light-emitting diode (OLED) and Organic Thin Film Transistor (OTFT). Printing of the organic layers was performed with a small-scale gravure coating machine, while the metallic layers were vacuum-evaporated. Devices with gravure-printed layers are at least comparable with the spin-coated devices. Effects of the solvent formulation and surface energy mismatch between the organic layer materials on the printed patterns and device performance were discussed. We will present the initial design and experimental data of OTFT fabricated by roll-type soft contact transfer process.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.326-329
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• 2002

In this paper, we investigated a feasibility of cerium oxide(CeO$_2$) films as a buffer layer of MFIS(metal ferroelectric insulator semiconductor) type capacitor. CeO$_2$ layer were Prepared by two step process of a low temperature film growth and subsequent RTA (rapid thermal annealing) treatment. By app1ying an ultra thin Ce metal seed layer and N$_2$ Plasma treatment, dielectric and interface properties were improved. It means that unwanted SiO$_2$ layer generation was successfully suppressed at the interface between He buffer layer and Si substrate. The lowest lattice mismatch of CeO$_2$ film was as low as 1.76% and average surface roughness was less than 0.7 m. The Al/CeO$_2$/Si structure shows breakdown electric field of 1.2 MV/cm, dielectric constant of more than 15.1 and interface state densities as low as 1.84${\times}$10$\^$11/ cm$\^$-1/eV$\^$-1/. After N$_2$ plasma treatment, the leakage current was reduced with about 2-order.

• BMB Reports
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• v.38 no.5
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• pp.555-562
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• 2005

Single nucleotide polymorphisms (SNPs) are becoming the most common type of markers used in genetic analysis. In the present report a SNP has been chosen to test the applicability of Real Time PCR to discriminate and quantify SNPs alleles on DNA pools. Amplification Refractory Mutation System (ARMS) and Mismatch Amplification Mutation Assay (MAMA) has been applied. Each assay has been pre-validated testing specificity and performances (linearity, PCR efficiency, interference limit, limit of detection, limit of quantification, precision and accuracy). Both the approaches achieve a precise and accurate estimation of the allele frequencies on pooled DNA samples in the range from 5% to 95% and don't require standard curves or calibrators. The lowest measurement that could be significantly distinguished from the background noise has been determined around the 1% for both the approaches, allowing to extend the range of quantifications from 1% to 99%. Furthermore applicability of Real Time PCR assays for general diagnostic purposes is discussed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.98-106
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• 1998

Efficient power transmission from a single mode fiber to a thin-film waveguide devices is one of the most fundamental and inevitable subject that should be first solved toward the realization of the integrated optic system. In this paper, fiber-waveguide coupling structure is considered and the large mismatch of field profiles at the fiber-waveguide interface is well avoided by using to the coupling guide which is intentionally developed on the top of the thin-film guuide. From the simulation, the taper-type structure are shown to be easier realizeable than the uniform one, since optical coupling between the guides in the latter has a stronger tolerance to the deviation of waveguide parameters.

• Proceedings of the SAREK Conference
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• 2009.06a
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• pp.967-972
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• 2009

A dynamic model has been developed to investigate the operability of a single and double-effect solar energy assisted parallel type absorption chiller. In the study, main components and fluid transport mechanism were modeled. And solar radiation and the solar collector also were also modeled along with its control design. The model was run for the single mode with solar energy supply only and the solar/gas driving double effect mode. From the simulation results, it was found that the present configuration of the chiller is not capable of regulating solution flow rates according to variable solar energy input. And the issues of the excessive circulation flowrate and the mismatch between available solar power and cooling load discourages the use of the single mode, but the dual use of gas and solar power is recommendable in view of controllability and enhanced COP.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.11 s.176
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• pp.165-172
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• 2005

In MEMS (Micro-Electro-Mechanical System), packaging induced stress or stress induced structure deformation becomes increasing concerns since it directly affects the performance of the device. In the decoupled vibratory MEMS gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, packaged using the anodic bonding at the wafer level and EMC (epoxy molding compound) molding, has a deformation of MEMS structure caused by thermal expansion mismatch. This effect results in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) process technology. It uses a silicon wafer and two glass wafers to minimize the wafer warpage. Thus the warpage of the wafer is greatly reduced and the frequency difference is more uniformly distributed. In addition. in order to increase robustness of the structure against deformation caused by EMC molding, a 'crab-leg' type spring is replaced with a semi-folded spring. The results show that the frequency shift is greatly reduced after applying the semi-folded spring. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.