• 한국세라믹학회지
• /
• 제42권12호
• /
• pp.865-871
• /
• 2005

Submicron thick solid electrolyte membrane is essential to the implementation of low temperature solid oxide fuel cell, and, therefore, development of new electrode structures is necessary for the submicron thick solid electrolyte deposition while providing functions as current collector and fuel transport channel. In this research, a nickel membrane with multi-stage nano hole array has been produced via modified two step replication process. The obtained membrane has practical size of 12mm diameter and $50{\mu}m$ thickness. The multi-stage nature provides 20nm pores on one side and 200nm on the other side. The 20nm side provides catalyst layer and $30\~40\%$ planar porosity was measured. The successful deposition of submicron thick yttria stabilized zirconia membrane on the substrate shows the possibility of achieving a low temperature solid oxide fuel cell.

• Bulletin of the Korean Chemical Society
• /
• 제34권4호
• /
• pp.1221-1224
• /
• 2013

The atomic layer deposition (ALD) of $ZrO_2$ was conducted in ultrahigh vacuum (UHV) conditions. The surface was exposed to $ZrCl_4$ and $H_2O$ in sequence and the surface species produced after each step were identified in situ with X-ray photoelectron spectroscopy (XPS). $ZrCl_4$ is molecularly adsorbed at 140 K on the $SiO_2$/Si(111) surface covered with OH groups. When the surface is heated to 300 K, $ZrCl_4$ loses two Cl atoms to produce $ZrCl_2$ species. Remaining Cl atoms of $ZrCl_2$ species can be completely removed by exposing the surface to $H_2O$ at 300 K followed by heating to 600 K. The layer-by-layer deposition of $ZrO_2$ was successfully accomplished by repeated cycles of $ZrCl_4$ dosing and $H_2O$ treatment.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2009년도 추계학술대회 논문집
• /
• pp.275-275
• /
• 2009

CdTe(331)/Si(211) and CdTe(400)/Si(100) thin films have been grown by MOCVD(metal organic chemical vapor deposition) system for large scale of IFPAs(IR focal plane arrays). We have investigated the effect of various growth parameters on the surface morphology and structural quality. Single crystalline CdTe(331) films were grown by two stage growth method - low temperature buffer layer step and high temperature growth step. In other case, single crystal of CdTe(400) films were grown on a few atomic layer thickness of GaAs which is grown on Si(100) substrate by molecular beam epitaxy. The crystalline quality of the films was analyzed by X-ray diffraction. The surface morphology and crystal structure of CdTe films were characterized by optical microscope.

• 한국진공학회지
• /
• 제12권S1호
• /
• pp.79-82
• /
• 2003

We present the investigation on P- and As-desorption process from the (001) InP surface in metal organic chemical vapor deposition using surface photoabsorption (SPA). The monochromatic SPA signal showed rapid initial increase to reach In-stabilized surface value after $PH_3$ was turned off, but in case of As-desorption, the signal showed clear existence of a metastable state after the $AsH_3$ was turned off. The SPA spectra at each stable surfaces were taken to confirm the interpretation. This result indicates that the As-desorption process should be understood as a two-step process, in contrast to P-desorption of one-step process.

• 한국전기전자재료학회논문지
• /
• 제14권12호
• /
• pp.1027-1031
• /
• 2001

A new constant growth technique to conserve an initial grating height of V-groove AlGaAs/InGaAs quantum nanostructures above 1.0 $\mu\textrm{m}$ thickness has been successfully embodied on submicron gratings using low pressure metalorganic chemical vapor deposition. A GaAs buffer prior to an AlGaAs barrier layer on submicron gratings plays an important role in overcoming mass transport effects and improving the uniformity of gratings. Transmission electron microscopy (TEM) image shows that high-density V-groove InGaAs quantum wires (QWRs) are well confined at the bottom of gratings. The photoluminescence (PL) peak of the InGaAs QWRs is observed in the temperature range from 10 to 280 K with a relatively narrow full width at half maximum less than 40 meV at room temperature PL. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystal.

• 한국항만학회지
• /
• 제14권4호
• /
• pp.451-461
• /
• 2000

The design and maintenance of navigation channel and water facilities of an harbor which is located at the mouth of river or at the estuary area are difficult due to the complexity of estuarial water and sediment circulation. Effects of deepening navigable waterways, of changing coastline configurations, or of discharging dredged material to the open sea are necessary to be investigated and predicted in terms of water quality and possible physical changes to the coastal environment. A borad analysis of the transport mechanism in the estuary area was made in terms of sediment property, falling velocity, concentration and flow characteristics. In order to simulate the transport processes, a two-dimensional finite element model is developed, which includes erosion, transport and deposition mechanism of suspended sediments. Galerkin’s weighted residual method is used to solve the transient convection-diffusion equation. The fluid domain is subdivided into a series of triangular elements in which a quadratic approximation is made for suspended sediment concentration. Model could deal with a continuous aggregation by stipulating the settling velocity of the flocs in each element. The model provides suspended sediment concentration, bed shear stress, erosion versus deposition rate and bed profile at the given time step.

• Membrane and Water Treatment
• /
• 제3권4호
• /
• pp.221-230
• /
• 2012

This study employed the modified fouling index (MFI) to determine the performance of a two-step recycling system - a membrane filtration integrated laminar flow water storage (LFWS) tank followed by an ion exchange process to reclaim ultrapure water (UPW) from the wastewater generated from semiconductor wafer backgrinding and sawing processes. The first step consisted of the utilization of either ultrafiltration (UF) or nanofiltration (NF) membranes to remove solids in the wastewater where the second step consisted of an ion exchanger to further purify the filtrate. The system was able to produce high purity water in a continuous operating mode. However, higher recycling cost could be incurred due to membrane fouling. The feed wastewater used for this study contained high concentration of fine particles with low organic and ionic contents, hence membrane fouling was mainly attributed to particulate deposition and cake formation. Based on the MFI results, a LFWS tank that was equipped with a turbulence reducer with a pair of auto-valves was developed and found effective in minimizing fouling by discharging concentrated wastewater prior to any membrane filtration. By comparing flux behaviors of the improved system with the conventional system, the former maintained a high flux than the latter at the end of the experiment.

• 센서학회지
• /
• 제30권5호
• /
• pp.279-285
• /
• 2021

Recently, cesium tellurium iodine (Cs₂TeI₆) has emerged as an inorganic halide perovskite material with potential application in optoelectronic devices due to its high absorption coefficient, suitable bandgap and because it consists of nontoxic and earth-abundant elements. However, studies on its fabrication process as well as photoresponse characteristics are limited. In this study, a simple and effective method is introduced for the synthesis of Cs₂TeI₆ thin films by a two-step dry process. A Cs₂TeI₆-based lateral photosensor was fabricated, and its photoresponse characteristics were explored under laser illuminations of four different wavelengths in the visible range: 405, 450, 520, and 655 nm. The initial photosensing results suggest potential application and can lead to more promising studies of Cs₂TeI₆ film in optoelectronics.

• Current Photovoltaic Research
• /
• 제7권1호
• /
• pp.1-8
• /
• 2019

The $Cu(In,Ga)Se_2$ (CIGS) thin film obtained by two-step process (metal deposition and Se annealing) has a rough surface morphology and many voids at the CIGS/Mo interface. To solve the problem a precursor that contains Se was employer by depositing a (In,Se)/(Cu,Ga) stacked layer. We devised a two-step annealing (vacuum pre-annealing and Se annealing) for the precursor because direct annealing of the precursor in Se environment resulted in the small grains with unwanted demarcation between stacked layers. After vacuum pre-annealing up to $500^{\circ}C$ the CIGS film consisted of CIGS phase and secondary phases including $In_4Se_3$, InSe, and $Cu_9(In,Ga)_4$. The secondary phases were completely converted to CIGS phase by a subsequent Se annealing. A void-free CIGS/Mo interface was obtained by the two-step annealing process. Especially, the CIGS film prepared by vacuum annealing $450^{\circ}C$ and subsequent Se annealing $550^{\circ}C$ showed a densely-packed grains with smooth surface, well-aligned bamboo grains on the top of the film, little voids in the film, and also little voids at the CIGS/Mo interface. The smooth surface enhanced the cell performance due to the increase of shunt resistance.

• 전자공학회논문지D
• /
• 제35D권2호
• /
• pp.60-69
• /
• 1998

Polysilicon surface mdoification tecnique is developed to reduce the sticking of microstructures fabricated by micromachining. Modified anti-sticking grain holes are simply formed by two-step dry eth without additional photolithography nor deposition of thin films. Both process-induced sticking and in-use sticking are successfully reduced more than two times by adopting grain holed polysilicon substrate. A sticking model for cantilever beam is derived. This model includes bending moment stems from stress gradient along the thickness directionof structural polysilicon. Because the surface tension of rinse liquid and the surface energy of the solids to be stuk tend to decrease in recently developed anti-sticking techniques, the effect of stress gradient will play an important role to analyze the sticking phenomena. Effect of the temperature during post-release rinse and dry is modelled and verified experimentally. Based on developed anti-sticking polysilicon structure and the sticking model, sticking of microstructure, fabricated by simple wet process including sacrificial layer etch and rinse with deionized water without special equimpment for post-release rinse and dry was alleviated more than 3.5 times.