• Korean Journal of Materials Research
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• v.19 no.3
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• pp.163-168
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• 2009

$Eu^{3+}$-doped $Y_2O_3$ red phosphor was synthesized in a flux method using the chemicals $Y_2O_3,\;Eu_2O_3,\;H_3BO_3$ and $BaCl_2{\cdot}2H_2O$. The effect of a flux addition on the preparation of $Y_2O_3:Eu_{3+}$ red phosphor used as a cold cathode fluorescence lamp was investigated. $H_3BO_3$ and $BaCl_2{\cdot}2H_2O$ fluxes were used due to their different melting points. The crystallinity, thermal properties, morphology, and emission characteristics were measured using XRD, TG-DTA, SEM, and a photo-excited spectrometer. Under UV excitation of 254 nm, $Eu_2O_3$ 3.7 mol% doped $Y_2O_3$ exhibited a strong narrow-band red emission, peaking at 612 nm. From this result, the phosphor synthesized by firing $Y_2O_3$ with 3.7 mol% of $Eu_2O_3$, 0.25 mol% of $H_3BO_3$ and 0.5 mol% of $BaCl_2{\cdot}2H_2O$ fluxes at $1400^{\circ}C$ for 2 hours had a larger particle size of $4{\mu}m$ on average compared to the phosphor of the $H_3BO_3$ flux alone. In addition, a phosphor synthesized by the two fluxes together had a rounder corner shape, which led to the maximum emission intensity.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.34-39
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• 2008

We have investigated the characteristics of $Al_{0.55}Ga_{0.45}N$/GaN heterostructures with and without low-temperature (LT) AlN interlayer grown by metalorganic chemical vapor deposition. The structural and optical properties were systematically studied by Rutherford backscattering spectroscopy (RBS), X-ray diffraction (XRD), optical microscopy (OMS), scanning electron microscopy (SEM), and photoluminescence (PL). The Al content (x) of 55% and the structural properties of $Al_xGa_{1-x}N$/GaN heterostructures were investigated by using RBS and XRD, respectively. We carried out OMS and SEM experiments and obtained a decrease of the crack network in $Al_{0.55}Ga_{0.45}N$ layer with LT-AlN interlayer. A two-dimensional electron gas (2DEG)-related PL peak located at ${\sim}3.437eV$ was observed at 10 K for $Al_{0.55}Ga_{0.45}N$/GaN with LT-AlN interlayer. The 2DEG-related emission intensity gradually decreased with increasing temperature and disappeared at temperatures around 100 K. In addition, with increasing the excitation power above 3.0 mW, two 2DEG-related PL peaks were observed at ${\sim}3.411$ and ${\sim}3.437eV$. The observed lower-energy and higher-energy side 2DEG peaks were attributed to the transitions from the sub-band level and the Fermi energy level of 2DEG at the AlGaN/LT-AlN/GaN heterointerface, respectively.