• Journal of the Korean Society of Fisheries and Ocean Technology
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• v.21 no.1
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• pp.75-81
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• 1985

The tensile and dielctric strength of the epoxied resin with bi-directional woven glass fibers with a laminate of two layers(G-10) are studied, and the test parameter is the angle between fiber orientation and the tensile axis. The obtained results may be summaried as follows: 1) when the angle between fiber orientation and tensile axis was varied from 0$^{\circ}$ to 45$^{\circ}$ the yield and fracture stresses have a tendency to decrease with increase in the angle. Especially, the decrease rates in the yield and fracture stresses are changed remarkably in the range of 0$^{\circ}$ to 15$^{\circ}$. 2) The fracture strain has showed the maximum value when the angle between fiber orientation and tensile axis is 45$^{\circ}$, and showed the rapid rate of change from 15$^{\circ}$ to 45$^{\circ}$. 3) For the sample with same angle between fiber orientation and tensile axis the maximum dielectric strength under compressive stress is decreased with increase in tensile stress, when the compressive stress is increased as a parameter of tensile stress. 4) When the angle between fiber orientation and tensile axis is 45$^{\circ}$, the dielectric strength showed the worst value, as the mechanical strength did.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.470-470
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• 2013

Recently, active materials such as amorphous silicon (a-Si), poly crystalline silicon (poly-Si), transition metal oxide semiconductors (TMO), and organic semiconductors have been demonstrated for flexible electronics. In order to apply flexible devices on the polymer substrates, all layers should require the characteristic of flexibility as well as the low temperature process. Especially, pentacene thin film transistors (TFTs) have been investigated for probable use in low-cost, large-area, flexible electronic applications such as radio frequency identification (RFID) tags, smart cards, display backplane driver circuits, and sensors. Since pentacene TFTs were studied, their electrical characteristics with varying single variable such as strain, humidity, and temperature have been reported by various groups, which must preferentially be performed in the flexible electronics. For example, the channel mobility of pentacene organic TFTs mainly led to change in device performance under mechanical deformation. While some electrical characteristics like carrier mobility and concentration of organic TFTs were significantly changed at the different temperature. However, there is no study concerning multivariable. Devices actually worked in many different kinds of the environment such as thermal, light, mechanical bending, humidity and various gases. For commercialization, not fewer than two variables of mechanism analysis have to be investigated. Analyzing the phenomenon of shifted characteristics under the change of multivariable may be able to be the importance with developing improved dielectric and encapsulation layer materials. In this study, we have fabricated flexible pentacene TFTs on polymer substrates and observed electrical characteristics of pentacene TFTs exposed to tensile and compressive strains at the different values of temperature like room temperature (RT), 40, 50, $60^{\circ}C$. Effects of bending and heating on the device performance of pentacene TFT will be discussed in detail.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1202-1203
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• 2015

This paper describes the development of HVDC ${\pm}500kV$ polypropylene laminated paper (PPLP) mass-impregnated (MI) type cable system for HVDC transmission lines. As you know, mass-impregnated type cable generally has only insulating layer with the Kraft paper impregnated with a high-viscosity insulating compound. But polypropylene laminated paper is made of a layer of extruded polypropylene (PP) film sandwiched between two layers of Kraft paper. Thanks to PP film and its combination with Kraft paper, PPLP has higher AC, Impulse (Imp.) and DC breakdown (BD) strengths as well as lower dielectric loss than conventional Kraft paper insulation. In addition, Kraft MI cable has a limitation for the maximum conductor temperature as $55^{\circ}C$ But this PPLP MI cable has higher maximum conductor temperature than that of Kraft MI cable due to advantage of oil drainage characteristics. It is the most economic type of cable for HVDC transmission. Also HVDC ${\pm}500kV$ PPLP MI cable system was developed including land joints and outdoor-terminations. In order to prove the mechanical and electrical performances, the type test was carried out according to CIGRE recommendations. A full scale cable system has been tested successfully. And additional load cycle and polarity reversal tests on the cable system showed a higher performance compared with a similar mass impregnated paper cable.

• Korean Journal of Remote Sensing
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• v.26 no.1
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• pp.21-27
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• 2010

This paper presents a numerical simulation of the radar backscattering from oil spills on ocean surface. At first, a one-dimensionally rough sea surface is numerically generated for a given wind speed at HEBEI SPIRIT accident. Then, an oil-spilled sea surface is represented with a two-layered medium, which is generated by adding a thin low-dielectric oil layer on the randomly-rough highdielectric sea surface. The backscattering coefficients of various oil-spilled sea surfaces are obtained using the Method of Moments and Monte Carlo technique for various surface roughness, oil-layer thicknesses, frequencies, polarizations and incidence angles. The numerical method is verified with theoretical models for simple structures. The reduction of the backscattering coefficients due to the lowdielectric oil-layers on sea surfaces has been analyzed. These numerical results will help to detect any oil spills on sea surfaces, and consequently, to classify SAR images.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.171.2-171.2
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• 2016

The 2-dimensiona electron gas (2DEG) layers have opened tremendous interests in the heterooxide interfaces formed between two insulating materials, especially between LaAlO3 and $SrTiO_3$. The 2DEG layers exhibit extremely high mobility and carrier concentrations along with metallic transport phenomena unlike the constituent oxide materials, i.e., $LaAlO_3$ and $SrTiO_3$. The current work inserted artificially the interfacial layer, $Sr_xCa_{1-x}TiO_3$ between $LaAlO_3$ and $SrTiO_3$, with the aim to controlling the 2-dimensional transports. The insertion of the additional materials affect significantly their corresponding electrical transports. Such features have been probed using DC and AC-based characterizations. In particular, impedance spectroscopy was employed as an AC-based characterization tool. Frequency-dependent impedance spectroscopy have been widely applied to a number of electroceramic materials, such as varistors, MLCCs, solid electrolytes, etc. Impedance spectroscopy provides powerful information on the materials system: i) the simultaneous measurement of conductivity and dielectric constants, ii) systematic identification of electrical origins among bulk-, grain boundary-, and electrode-based responses, and iii) the numerical estimation on the uniformity of the electrical origins. Impedance spectroscopy was applied to the $LaAlO_3/Sr_xCa_{1-x}TiO_3/SrTiO_3$ system, in order to understand the 2-dimensional transports in terms of the interfacial design concepts. The 2-dimensional conduction behavior system is analyzed with special emphasis on the underlying mechanisms. Such approach is discussed towards rational optimization of the 2-dimensional nanoelectronic devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.284-284
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• 2016

Topological insulator (TI) is a bulk-insulating material with topologically protected Dirac surface states in the band gap. In particular, $Bi_2Se_3$ attracted great attention as a model three-dimensional TI due to its simple electronic structure of the surface states in a relatively large band gap (~0.3 eV). However, experimental efforts using $Bi_2Se_3$ have been difficult due to the abundance of structural defects, which frequently results in the bulk conduction being dominant over the surface conduction in transport due to the bulk doping effects of the defect sites. One promising approach in avoiding this problem is to reduce the structural defects by heteroepitaxially grow $Bi_2Se_3$ on a substrate with a compatible lattice structure, while also preventing surface degradation by encapsulating the pristine interface between $Bi_2Se_3$ and the substrate in a clean growth environment. A particularly promising choice of substrate for the heteroepitaxial growth is hexagonal boron nitride (h-BN), which has the same two-dimensional (2D) van der Waals (vdW) layered structure and hexagonal lattice symmetry as $Bi_2Se_3$. Moreover, since h-BN is a dielectric insulator with a large bandgap energy of 5.97 eV and chemically inert surfaces, it is well suited as a substrate for high mobility electronic transport studies of vdW material systems. Here we report the heteroepitaxial growth and characterization of high quality topological insulator $Bi_2Se_3$ thin films prepared on h-BN layers. Especially, we used molecular beam epitaxy to achieve high quality TI thin films with extremely low defect concentrations and an ideal interface between the films and substrates. To optimize the morphology and microstructural quality of the films, a two-step growth was performed on h-BN layers transferred on transmission electron microscopy (TEM) compatible substrates. The resulting $Bi_2Se_3$ thin films were highly crystalline with atomically smooth terraces over a large area, and the $Bi_2Se_3$ and h-BN exhibited a clear heteroepitaxial relationship with an atomically abrupt and clean interface, as examined by high-resolution TEM. Magnetotransport characterizations revealed that this interface supports a high quality topological surface state devoid of bulk contribution, as evidenced by Hall, Shubnikov-de Haas, and weak anti-localization measurements. We believe that the experimental scheme demonstrated in this talk can serve as a promising method for the preparation of high quality TI thin films as well as many other heterostructures based on 2D vdW layered materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.431-432
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• 2012

In the era of 20 nm scaled semiconductor volume manufacturing, Microelectronics Manufacturing Engineering Education is presented in this paper. The purpose of microelectronic engineering education is to educate engineers to work in the semiconductor industry; it is therefore should be considered even before than technology development. Three Microelectronics Manufacturing Engineering related courses are introduced, and how undergraduate students acquired hands-on experience on Microelectronics fabrication and manufacturing. Conventionally employed wire bonding was recognized as not only an additional parasitic source in high-frequency mobile applications due to the increased inductance caused from the wiring loop, but also a huddle for minimizing IC packaging footprint. To alleviate the concerns, chip bumping technologies such as flip chip bumping and pillar bumping have been suggested as promising chip assembly methods to provide high-density interconnects and lower signal propagation delay [1,2]. Aluminum as metal interconnecting material over the decades in integrated circuits (ICs) manufacturing has been rapidly replaced with copper in majority IC products. A single copper metal layer with various test patterns of lines and vias and $400{\mu}m$ by $400{\mu}m$ interconnected pads are formed. Mask M1 allows metal interconnection patterns on 4" wafers with AZ1512 positive tone photoresist, and Cu/TiN/Ti layers are wet etched in two steps. We employed WPR, a thick patternable negative photoresist, manufactured by JSR Corp., which is specifically developed as dielectric material for multi- chip packaging (MCP) and package-on-package (PoP). Spin-coating at 1,000 rpm, i-line UV exposure, and 1 hour curing at $110^{\circ}C$ allows about $25{\mu}m$ thick passivation layer before performing wafer level soldering. Conventional Si3N4 passivation between Cu and WPR layer using plasma CVD can be an optional. To practice the board level flip chip assembly, individual students draw their own fan-outs of 40 rectangle pads using Eagle CAD, a free PCB artwork EDA. Individuals then transfer the test circuitry on a blank CCFL board followed by Cu etching and solder mask processes. Negative dry film resist (DFR), Accimage$^{(R)}$, manufactured by Kolon Industries, Inc., was used for solder resist for ball grid array (BGA). We demonstrated how Microelectronics Manufacturing Engineering education has been performed by presenting brief intermediate by-product from undergraduate and graduate students. Microelectronics Manufacturing Engineering, once again, is to educating engineers to actively work in the area of semiconductor manufacturing. Through one semester senior level hands-on laboratory course, participating students will have clearer understanding on microelectronics manufacturing and realized the importance of manufacturing yield in practice.

• Journal of the Korean Magnetics Society
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• v.15 no.2
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• pp.67-75
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• 2005

For th aim of lightweight microwave absorbers, conductive and magnetic microspheres are fabricated by plating of Co films on hollow ceramic microspheres of low density. Metal plating was carried out in a two-step electroless plating process (pre-treatment of activation and plating). Uniform coating of the film with about $2{\~}3{\cal}um$ thickness was identified by SEM. High-frequency magnetic and microwave absorbing properties were determined in the rubber composites containing the Co-coated microspheres. Due to conductive and ferromagnetic behavior of the Co thin films, high dielectric constant and magnetic loss can be obtained in the microwave frequencies. Due to those electromagnetic properties, high absorption rate (25 dB) and thin matching thickness ($2.0{\~}2.5{\cal}mm$) are predicted in the composite layers containing the metal-coated microspheres of low density (about 0.84 g/cc) for the electromagnetic radiation in microwave frequencies.