• Journal of the Optical Society of Korea
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• v.14 no.3
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• pp.277-281
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• 2010

We propose a design and optimization method for a dielectric-loaded surface plasmon polariton waveguide using a genetic algorithm. This structure consists of a polymer ridge on top of two layers of substrate and gold film. The thickness, width and refractive index of the ridge are designed to optimize the figures of merit including mode confinement and propagation length. The modal analysis combined with the effective index method shows that the designed waveguide exhibits a fundamental propagation mode with high mode confinement while ensuring that the propagation loss remains relatively low.

• Journal of Advanced Navigation Technology
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• v.17 no.4
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• pp.429-434
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• 2013

In this paper, the TM (Transverse Magnetic) scattering problems by a perfectly conducting strip grating over a grounded two dielectric layers with edge boundary condition are analyzed by applying the FGMM (Fourier Galerkin Moment Method). For the TM scattering problem, the induced surface current density is expected to the very high value at both edges of the strip, then the induced surface current density on the conductive strip is expanded in a series of the multiplication of the Chebyshev polynomials of the first kind and the functions of appropriate edge boundary condition. Generally, when the value of the relative permittivity of dielectric layers over the ground plane increased, the strip width according to the sharp variation points of the reflected power is shifted to a higher value. The numerical results shown the fast convergent solution and good agreement compared to those of the existing papers.

• Journal of applied mathematics & informatics
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• v.25 no.1_2
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• pp.315-327
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• 2007

Mathematical aspects of the electromagnetic surface-wave propagation are examined for the dielectric core consisting of multiple sub-layers, which are embedded in the gap between the two bounding cladding metals. For this purpose, the linear problem with a partial differential wave equation is formulated into a nonlinear eigenvalue problem. The resulting eigenvalue is found to exist only for a certain combination of the material densities and the number of the multiple sub-layers. The implications of several limiting cases are discussed in terms of electromagnetic characteristics.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.11
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• pp.78-84
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• 1998

Refractive index was matched using the inhomogeneous dielectric layers to enhance the optical transmittance of surface discharge type AC PDP. The transmittance of upper panel which had two index-matched inhomogeneous dielectric layers was measured as 85%, and this result is regarded as 15% better transmittance than that of conventional structure, which is about 70%.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.222-225
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• 2002

Microwave dielectric properties of the layered and functionally graded materials (FGMs) of $Mg_{0.93}Ca_{0.07}TiO_3$ (MCT) and $(Ca_{0.3}Li_{0.14}Sm_{0.42})TiO_3$(CLST) were investigated as a function of the volume ratio of two components. Dielectric constant was decreased with an increase of the volume ratio of MCT which had a lower dielectric constant thant CLST. For the layered FGMs specimens, the difference of thermal expansion coefficients between two components induced thermal strain to dielectric layers, which was confirmed by the plot of ${\Delta}$k (X-ray diffraction peak width0 versus k (scattering vector) using the double-peak Lorentzian function, f(x). Quality factor of the specimens was affected by the thermal strain of dielectric layer, especially MCT layer. For the specimen with the volume ratio of MCT/CLST = 2, the qulaity factor of the specimen showed a minimum value due to the maximum thermal strain fo MCT layer.

• KIEE International Transactions on Electrophysics and Applications
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• v.12C no.4
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• pp.208-213
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• 2002

The present study describe the electrical performance of amorphous T $a_2$ $O_{5-X}$ fabricated on the buffer layers Ti and Ti $O_2$. T $a_2$ $O_{5-X}$ thin films were grown on the Ti and Ti $O_2$ layers as a capacitor layer using reactive sputtering method. The X-ray pattern analysis indicated that the two as-deposited films were amorphous and the amorphous state was kept stable on the RTA(rapid thermal annealing) at even $700^{\circ}C$. Measurements of dielectric properties of the reactive sputtered T $a_2$ $O_{5-X}$ thin films fabricated in two simple MIS(metal insulator semiconductor), structures, (Cu/T $a_2$ $O_{5}$ Ti/Si and CuT $a_2$ $O_{5}$ Ti $O_2$Si) show that the amorphous T $a_2$ $O_{5}$ grown on Ti showed high dielectric constant (23～39) and high leakage current density(10$^{-3}$ ～10$^{-4}$ (A/$\textrm{cm}^2$)), whereas relatively low dielectric constant (～15) and tow leakage current density(10$^{-9}$ ～10$^{-10}$ (A/$\textrm{cm}^2$)) were observed in the amorphous T $a_2$ $O_{5}$ deposited on the Ti $O_2$ layer. The electrical behaviors of the T $a_2$ $O^{5}$ thin films were attributed to the contribution of Ti- $O_2$ and the compositionally gradient Ta-Ti-0, being the low dielectric layer and high leakage current barrier. In additional, The T $a_2$ $O_{5}$ Ti $O_2$ thin films exhibited dominant conduction mechanism contributed by the Poole-Frenkel emission at high electric field. In the case of T $a_2$ $O_{5}$ Ti $O_2$ thin films were related to the diffusion of Ta, Ti and O, followed by the creation of vacancies, in the rapid thermal treated thin films.films.

• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.5
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• pp.644-651
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• 2009

In this paper, the design results of a $22.5^{\circ}$ diode phase shifter for the RADANT lens and two $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layers for the diode phase shifter are presented. The amount of phase shift introduced by each dielectric layer depends on the thickness and the shape of the metal strip and the electrical property of the diode. The equivalent circuit model is employed to represent the dielectric phase shift layer, and the simulated result of the equival circuit model is compared with the result of the field simulation. The measured data of the fabricated $11.25^{\circ}$, $22.5^{\circ}$ dielectric phase shift layer shows about $2^{\circ}$ phase shift error.

• Journal of Advanced Navigation Technology
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• v.17 no.2
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• pp.183-188
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• 2013

In this paper, the TE (Transverse Electric) scattering problems by a perfectly conducting strip grating over a grounded two dielectric layers with edge boundary condition are analyzed by applying the FGMM (Fourier Galerkin Moment Method). For the TE scattering problem, the induced surface current density is expected to the zero value at both edges of the strip, then the induced surface current density on the strip is expanded in a series of the multiplication of the Chebyshev polynomials of the second kind and the functions of appropriate edge boundary condition. The numerical results shown the fast convergent solution and good agreement compared to those of the existing papers.

• Journal of the Korean institute of surface engineering
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• v.33 no.4
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• pp.217-221
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• 2000

The gate oxide thickness is becoming thinner and thinner in order to speed up the semiconductor CMOS devices. We have investigated very thin$ SiO_2$ gate oxide layers and found anomaly between the thickness determined with capacitance measurement and these obtained with cross-sectional high resolution transmission electron microscopy. The thicknesses difference of the two becomes important for the thickness of the oxide below 5nm. We propose that the variation of dielectric constant in thin oxide films cause the anomaly. We modeled the behavior as (equation omitted) and determined $\varepsilon_{bulk}$=3.9 and $\varepsilon_{int}$=-4.0. We predict that optimum $SiO_2$ gate oxide thickness may be $20\AA$ due to negative contribution of the interface dielectric constant. These new results have very important implication for designing the CMOS devices.s.

• Journal of Advanced Navigation Technology
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• v.16 no.4
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• pp.635-640
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• 2012

In this paper, The TE (Transverse Electric) scattering problems by a perfectly conducting strip grating over a grounded two dielectric layers are analyzed by applying the conductive boundary condition and the FGMM (Fourier-Galerkin Moment Method) known as a numerical procedure, then the induced surface current density is expanded in a series of the multiplication of the unknown coefficient and the exponential function as a simple function. Generally, the reflected power gets increased according as the relative permittivity ${\epsilon}_{r2}$ and the thickness of dielectric layer $t_2$ of the region-2 in the presented structure gets increased, respectively. The sharp variations of the reflected power are due to resonance effects were previously called wood's anomaly, the numerical results show in good agreement with those of the existing papers.