• 전기화학회지
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• 제5권4호
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• pp.202-208
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• 2002

We have been investigating electropolymerization of pyrrole in aqueous electrolyte solutions in acidic as well as in neutral conditions by in situ electrochemical quartz crystal oscillator method, where resonant frequency and resonant resistance can be monitored simultaneously with current-voltage measurements during electropolymerization of pyrrole. The properties of thin PPy films prepared on electrode surfaces depended strongly on the experimental variables of electrode potentials applied, solution pH, kinds and quantity of supporting electrolytes, added chemicals, and the mode of electrochemical method employed. We are applying our experience gained on electropolymerization of pyrrole to immobilizing biomolecules onto electrode surfaces to develop a biosensor system. In this work, we wish to present the results on electrochemical monitoring on electropolymerization of pyrrole in the presence of DNA and albumin in different electrochemical conditions. Additionally we will summarize our investigations on the miniaturization of biomolecules/PPy composites by means of scanning tunneling microscopy.

• 한국자기학회지
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• 제16권6호
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• pp.271-275
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• 2006

Co/Pd 다층막을 이용한 수직자기터널접합에서 Co 전극 및 Co, Pd 다층막의 두께변화가 터널링 자기저항비에 미치는 영향에 대해 조사하였다. Co 전극의 경우 0.5nm 두께 부근에서 최대 자기저항비 값을 얻을 수 있었으며, 이는 터널배리어층 부근의 계면영역이 터널링 스핀분극에 주요한 역할을 하기 때문으로 보인다. 다층막내의 Co층의 두께가 증가함에 따라 자기저항비는 다소 복잡한 거동을 나타내었으며, 이는 Co층의 두께 증가에 따른 수직자기이방성의 변화와 계면거칠기 감소에 따른 접합저항의 감소가 복합적으로 작용하기 때문이다. Pd층의 경우 Co층과는 달리 자기저항변화(${\Delta}R$)감소가 자기저항비의 거동에 영향을 주었으며, 이는 비자성층인 Pd층의 증가에 따라 스핀산란이 증가하기 때문이다.

• KIEE International Transactions on Electrophysics and Applications
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• 제5C권3호
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• pp.115-118
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• 2005

Currently, molecular devices are reported utilizing active self-assembled monolayers (SAMs) containing the nitro group as the active component, which has active redox centers [1]. SAMs are ordered molecular structures formed by the adsorption of an active surfactant on a solid surface. The molecules will be spontaneously oriented toward the substrate surface and form an energetically favorable ordered layer. During this process, the surface-active head group of the molecule chemically reacts with and chemisorbs onto the substrate In this paper, the electrical properties of the 4'4- di(ethynylphenyl)-2'-nitro-1-benzenethiolate was confirmed. This material is well known as a conducting molecule having possible application to molecular level negative differential resistance (NDR) device. To deposit the self-assembly monolayers onto the gold electrode, the prefabricated Au(1 l l) substrates were immersed into 0.5[mM/l] self-assembly molecule in THF solution. Then, the electrical properties and surface morphologies of 4' 4-di(ethynylphenyl)-2' -nitro-1-benzenethiolate were measured by using the ultra-high vacuum scanning tunneling microscopy (UHV-STM).

• 한국화재소방학회:학술대회논문집
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• 한국화재소방학회 2009년도 춘계학술논문발표회 논문집
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• pp.506-512
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• 2009

최근 건설 중인 금정터널(총 연장 20.3km)이나 부산-거제간 침매터널은 화재 발생시 구조체의 강도저하로 인한 붕괴 및 사회기반시설인 교통망을 장시간 끊어놓은 등 큰 피해를 야기시킬 수 있다. 이러한 초장대터널이나 침매터널은 다른 터널보다 밀폐된 공간이므로 화재 시 단시간에 급격하게 온도상승이 일어날 수 있으며 이로 인해 구조물의 주재료인 콘크리트의 폭렬이 발생하고 구조물 내부까지 고온이 전달되어 경우에 따라 구조체의 붕괴의 원인이 되기도 한다. 따라서 본 연구에서는 콘크리트 구조체의 내화성능을 확보하기 위해 유럽에서 사용되고 있는 터널내화용 보드와 모르타르를 적용한 콘크리트의 내화성능 확보방안을 위한 시험을 수행하였다. 실험에 대한 내화성능 평가는 ITA(International Tunneling Association)에서 정한 화재 손상범위를 평가기준으로 하였고 터널화재 시나리오는 네덜란드의 TNO에 의해 실행된 실험결과를 따른 RWS 화재곡선을 이용하여 수행하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.490.2-490.2
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• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.

• 한국자기학회지
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• 제11권5호
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• pp.189-195
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• 2001

ICP 마그네트론 스퍼터를 이용하여 2.5$\times$2.5 $\textrm{cm}^2$ 넓이의 열산화막이 형성된 실리콘 기판에 총 14개의 동일한 간격으로 NiFe(170 )/CoFe(48 )/Al(13 )-O/CoFe(500 )/Ta(50 ) 구조의 junction을 형성하여 자기저항비의 균일성을 알아보았다. 각 층은 ICP 마그네트론 스퍼터를 이용하여 만들고 특히 절연층은 플라즈마 산화법으로 제작하여 TMR 소자를 만들었다. 완성된 각 소자를 외부자기장을 변화시키면서 4단자 측정법으로 기준저항, 자기저항비, 자화반전자장을 측정하였다. 균일한 박막형성에 적합한 ICP스퍼터라도 같은 공정하에서 자기저항비의 표준편차가 2.72 정도의 분포가 있었으며, 위치에 따른 각 기준저항, 자기저항비, 자화반전자장의 유의차는 없었다. 또한 기준저항이 증가함에따라 자기저항비와 자화반전자장이 증가하는 경향이 있었으며, 이러한 현상은 균일하지 못한 절연막의 형성에 기인하는 것으로 판단되었다. 균일한 성막이 가능한 ICP 스퍼터로도 위치별로 절연막층 상태의 국부적 분산에 따라 표준편차가 기준저항의 경우 64.19, 자기저항비의 경우 2.72의 변화가 발생하여 실제적인 소자의 양산을 위해서는 산화막 형성공정의 개선이나 후열처리 등에 의한 균일화 공정이 필요할 것으로 생각되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 추계학술대회 논문집 전기물성,응용부문
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• pp.139-141
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• 2005

It is possble to study charge transfer property which is caused by height variation because we can see the organic materials barrier height and STM tip by organic materials energy band gap. Here, we investigated the negative differential resistance(NDR) and charge transfer property of self-assembled 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment($H_{2}SO_{4}:H_{2}O_{2}$=3:1) Si. The Au substrate was exposed to a 1 mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/1$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_{2}Cl_{2}$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -1.50 V to -1.20 V with 298 K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found that NDR and charge transfer property by a little change of height when the voltage is applied between STM tip and electrode.

• 한국재료학회지
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• 제12권3호
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• pp.200-204
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• 2002

We fabricated TMR devices which have double oxidized tunnel barrier using plasma oxidation method to form homogeneously oxidized AlO tunnel barrier. We sputtered 10 $\AA$-bottom Al layer and oxidized it by varying oxidation time for 5, 10, 20 sec. Subsequent sputtering of 13 $\AA$ - Al was performed and the matallic layer was oxidized for 120 sec. The electrical resistance changed from 700$\Omega$ to 2700$\Omega$ with increase of oxidation time, while variation of MR ratio was little spreading 27~31% which is larger than that of TMR device of ordinary single tunnel barrier. We calculated effective barrier height and width by measuring I-V curves, from which we found the barrier height was 1.3~1.5 eV, sufficient for tunnel barrier, and the barrier width(<16.2 $\AA$) was smaller than that of directly measured value by the tunneling electron microscopy. Our results may be caused by insufficient oxidation of Al precursor into $Al_2O_3$. However, double oxidized tunnel barriers were superior to conventional single tunnel barrier in uniformity and density. We found that the external magnetic field to switch spin direction of ferromagnetic layer of pinned layer breaking ferro-antiferro exchange coupling was increased as bottom layer oxidation time increased. Our results imply that we were able to improve MR ratio and tune switching field by employing double oxidized tunnel barrier process.

• 한국정보통신학회논문지
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• 제3권1호
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• pp.229-234
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• 1999

측정 온도 변화와 n-형 실리콘 기판 농도의 변화를 갖는 백금 쇼트키 다이오드에서 신뢰성 특성을 분석하였다. 신뢰성 측정분석의 파라미터는 순방향 바이어스에서 포화전류, 임계전압과 이상인자이고, 소자의 모양에 따라서 역방향 바이어스에서 항복전압이다. 소자의 모양은 가장자리 효과를 위한 긴직사각형과 정사각형이다. 결과로써, 백금과 엔-실리콘 접합 부분에서 증가된 농도에 의해 순방향 임계전압, 장벽높이와 역방향 항복전압은 감소되었지만 이상인자와 포화전류는 증가되었다. 순방향과 역방향 바이어스 하에서 신뢰성 특성의 추출된 전기적 파라미터 값들은 측정온도(실온,$50^{\circ}C$, $75^{\circ}C$)에서 더 높은 온도에서 증가되었다. 긴직사각형 소자가 가장자리 부분의 터널링 효과에 의해 역방향 항복 특성에서 정사각형 소자보다 감소되었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1844-1846
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• 2005

The characteristic of negative differential resistance(NDR) is decreased current when the applied voltage is increased. The NDR is potentially very useful in molecular electronics device schemes. Here, we investigated the NDR property of self-assembled 4,4- Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene, which has been well known as a conducting molecule. Self-assembly monolayers(SAMs) were prepared on Au(111), which had been thermally deposited onto pre-treatment$(H_2SO_4:H_2O_2=3:1)$ Si. The Au substrate was exposed to a 1mM/l solution of 1-dodecanethiol in ethanol for 24 hours to form a monolayer. After thorough rinsing the sample, it was exposed to a $0.1{\mu}M/l$ solution of 4,4-Di(ethynylphenyl)-2'-nitro-1-(thioacetyl)benzene in dimethylformamide(DMF) for 30 min and kept in the dark during immersion to avoid photo-oxidation. After the assembly, the samples were removed from the solutions, rinsed thoroughly with methanol, acetone, and $CH_2Cl_2$, and finally blown dry with $N_2$. Under these conditions, we measured electrical properties of self-assembly monolayers(SAMs) using ultra high vacuum scanning tunneling microscopy(UHV-STM). The applied voltages were from -2V to +2V with 299K temperature. The vacuum condition is $6{\times}10^{-8}$ Torr. As a result, we found the NDR voltage of the nitro-benzene is $-1.61{\pm}0.26$ V(negative region) and $1.84{\pm}0.33$ (positive region), respectively.