• JSTS:Journal of Semiconductor Technology and Science
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• 제17권1호
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• pp.156-161
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• 2017

This work presents a novel structure for junction-less tunneling field effect transistor (JL-TFET) with a floating gate over the source region. Introduction of floating gate instead of fixed metal gate removes the limitation of fabrication process suitability. The proposed device is based on a heavily n-type-doped Si-channel junction-less field effect transistor (JLFET). A floating gate over source region and a control-gate with optimized metal work-function over channel region is used to make device work like a tunnel field effect transistor (TFET). The proposed device has exhibited excellent ID-VGS characteristics, ION/IOFF ratio, a point subthreshold slope (SS), and average SS for optimized device parameters. Electron charge stored in floating gate, isolation oxide layer and body doping concentration are optimized. The proposed JL-TFET can be a promising candidate for switching performances.

• 한국정보통신학회논문지
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• 제20권5호
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• pp.992-997
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• 2016

본 논문에서는 단채널 비대칭 이중게이트 MOSFET의 상하단 산화막 두께비에 대한 터널링 전류의 변화에 대하여 분석하고자 한다. 채널길이가 5 nm까지 감소하면 차단전류에서 터널링 전류의 비율이 크게 증가하게 된다. 이와 같은 단채널효과는 상하단 게이트 산화막 구조를 달리 제작할 수 있는 비대칭 이중게이트 MOSFET에서도 발생하고 있다. 본 논문에서는 상하단 게이트 산화막 두께비 변화에 대하여 차단전류 중에 터널링 전류의 비율 변화를 채널길이, 채널두께, 도핑농도 및 상하단 게이트 전압을 파라미터로 계산함으로써 단채널에서 발생하는 터널링 전류의 영향을 관찰하고자 한다. 이를 위하여 포아송방정식으로부터 해석학적 전위분포를 구하였으며 WKB(Wentzel-Kramers-Brillouin)근사를 이용하여 터널링 전류를 구하였다. 결과적으로 단채널 비대칭 이중게이트 MOSFET에서는 상하단 산화막 두께비에 의하여 터널링 전류가 크게 변화하는 것을 알 수 있었다. 특히 채널길이, 채널두께, 도핑농도 및 상하단 게이트 전압 등의 파라미터에 따라 매우 큰 변화를 보이고 있었다.

• The Journal of the Acoustical Society of Korea
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• 제23권1E호
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• pp.24-30
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• 2004

This study is aimed to evaluate a tunneling effect in the laboratory measurement of sound transmission loss. Based on the formulation for sound transmission loss of a finite panel in the presence of tunnel, variations of the sound transmission loss with the parameters of panel location and tunnel depth are investigated. In comparison with the transmission loss of a finite plate in an infinite rigid baffle, the maximum difference occurs in the laboratory measurement when the panel is placed at the center of the tunnel, while a better estimation of true transmission loss is obtained when the panel is located at either end.

• Applied Science and Convergence Technology
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• 제23권3호
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• pp.128-133
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• 2014

We study the ballistic spin transport properties in a two-dimensional electron gas system in the presence of magnetic barriers using a transfer matrix method. We concentrate on the size-effect of the magnetic barriers parallel to a two-dimensional electron gas plane. We calculate the transmission probability of the ballistic spin transport in the magnetic barrier structure while varying the width of the magnetic barriers. It is shown that resonant tunneling oscillation is affected by the width and height of the magnetic barriers sensitively as well as by the inter-spacing of the barriers. We also consider the effect of additional electrostatic modulation on the top of the magnetic barriers, which could enhance the current spin polarization. Because all-semiconductor-based devices are free from the resistance mismatch problem, a resonant tunneling structure using the two-dimensional electron gas system with electric-magnetic modulation would play an important role in future spintronics applications. From the results here, we provide information on the physical parameters of a device to produce well-defined spin-polarized current.

• Journal of Magnetics
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• 제21권4호
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• pp.491-495
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• 2016

We developed an embedded Object-Oriented Micromagnetic Frame (OOMMF) script schemes for more flexible simulations for complex and dynamic mircomagnetic behaviors. The OOMMF can be called from any kind of softwares by system calls, and we can interact with OOMMF by updating the input files for next step from the output files of the previous step of OOMMF. In our scheme, we set initial inputs for OOMMF simulation first, and run OOMMF for ${\Delta}t$ by system calls from any kind of control programs. After executing the OOMMF during ${\Delta}t$, we can obtain magnetization configuration file, and we adjust input parameters, and call OOMMF again for another ${\Delta}t$ running. We showed one example by using scripting embedded OOMMF scheme, tunneling magneto-resistance dependent switching time. We showed the simulation of tunneling magneto-resistance dependent switching process with non-uniform current density using the proposed framework as an example.

• Bulletin of the Korean Chemical Society
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• 제13권4호
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• pp.385-388
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• 1992

The transition probabilities for the thermal intramolecular electron transfer and the optical intervalence transfer band for a symmetric mixed-valence Cu(I)-Cu(II) compound were used to extract the PKS parameters $\varepsilon$ = -1.15, ${\lambda}$ = 2.839, and ${\nu}g$- = 923 $cm^{-1}$. These parameters determine the potential energy surfaces and vibronic energy levels. Three pairs of vibrational levels are below the top of the energy barrier in the lower potential surface. The contribution of each vibrational state to the intramolecular electron transfer was calculated. It is shown that the three pairs of vibrational states below the top of the barrier are responsible for most of the electron transfer at 261-306 K. So the intramolecular electron transfer in this system is a tunneling process. The transition probability exhibits the usual high-temperature Arrhenius behavior, but at lower temperature falls off to a temperature-independent value as tunneling from the lowest levels becomes the limiting process.

• 한국전기전자재료학회논문지
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• 제14권11호
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• pp.934-940
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• 2001

Magnetic properties were investigated for Si/SiO$_2$/NiFe(300 )/A1$_2$O$_3$(t)/Co(200 ) junction related with the parameters of $Al_2$O$_3$. Insulating $Al_2$O$_3$ layer was formed by depositing a 5~40 thick Al layer, followed by a 90~120s RF plasma oxidation in an $O_2$ atmosphere. Magnetoresistance was not observed for tunnel junction with 5~10 thick Al layer, but magnetoresistance was observed large for tunnel junction with 15~40 thick Al layer. Oxidation time did not largely influence magnetoresistance. Tunnel magnetoresistance effect depended on magnetization behavior of two ferromagnetic layers. Tunneling junction was confirmed through nonlinear I-V curve. In this work, tunneling magnetoresistance(TMR) up to 30 % was observed. This apparent TMR is an artifact of the nonuniform current flow over the junction in the cross geometry of the electrodes.

• Geomechanics and Engineering
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• 제37권3호
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• pp.223-241
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• 2024

Evaluating the performance of Tunnel Boring Machines (TBMs) stands as a pivotal juncture in the domain of hard rock mechanized tunneling, essential for achieving both a dependable construction timeline and utilization rate. In this investigation, three advanced artificial neural networks namely, gated recurrent unit (GRU), back propagation neural network (BPNN), and simple recurrent neural network (SRNN) were crafted to prognosticate TBM-rate of penetration (ROP). Drawing from a dataset comprising 1125 data points amassed during the construction of the Alborze Service Tunnel, the study commenced. Initially, five geomechanical parameters were scrutinized for their impact on TBM-ROP efficiency. Subsequent statistical analyses narrowed down the effective parameters to three, including uniaxial compressive strength (UCS), peak slope index (PSI), and Brazilian tensile strength (BTS). Among the methodologies employed, GRU emerged as the most robust model, demonstrating exceptional predictive prowess for TBM-ROP with staggering accuracy metrics on the testing subset (R² = 0.87, NRMSE = 6.76E-04, MAD = 2.85E-05). The proposed models present viable solutions for analogous ground and TBM tunneling scenarios, particularly beneficial in routes predominantly composed of volcanic and sedimentary rock formations. Leveraging forecasted parameters holds the promise of enhancing both machine efficiency and construction safety within TBM tunneling endeavors.

• Geomechanics and Engineering
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• 제29권5호
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• pp.509-522
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• 2022

Tail-grouting is an effective measure in shield engineering for filling the gap at the shield tail to reduce ground deformation. However, the gap-filling ratio affects the value of the gap parameters, leading to different surface settlements. It is impossible to adjust the fill ratio indiscriminately to study its effect, because the allowable adjustment range of the grouting quantity is limited to ensure construction site safety. In this study, taking the shield tunnel section between Chaoyanggang Station and Shilihe Station of Beijing Metro Line 17 as an example, the correlation between the tail-grouting parameter and the surface settlement is investigated and the optimal grouting quantity is evaluated. This site is suitable for conducting field tests to reduce the tail-grouting quantity of shield tunneling over a large range. In addition, the shield tunneling under different grouting parameters was simulated. Furthermore, we analyzed the evolution law of the surface settlement under different grouting parameters and obtained the difference in the settlement parameters for each construction stage. The results obtained indicate that the characteristics of the grout affect the development of the surface settlement. Therefore, reducing the setting time or increasing the initial strength of the grout could effectively suppress the development of surface subsidence. As the fill ratio decreases, the loose zone of the soil above the tunnel expands, and the soil deformation is easily transmitted to the surface. Meanwhile, owing to insufficient grout support, the lateral pressure on the tunnel segments is significantly reduced, and the segment moves considerably after being removed from the shield tail.

• 한국전자파학회논문지
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• 제20권2호
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• pp.135-140
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• 2009

본 논문에서는 초고주파 수동 부품의 전송 구조 내부에 전자기파의 차단 현상을 유발하는 불연속이 존재할 때 metamaterial을 이용하여 전파 특성에 변화를 유도할 수 있는 방법을 논의하고 원리를 규명한다. 특히 평행 평판 도파관 내부에 전파가 되지 않을 정도로 협소한 단면을 가진 영역의 매질이 ENZ(Epsilon Near Zero)의 metamaterial로 바뀔 때 전자기파가 진행되는, 이른바 터널링(tunneling) 조건(혹은 관통 효과)을 찾고 전자기학적 관점과 회로 관점으로 설명할 것이다. 전송선 이론에 불연속 구조는 물론 매질 변화를 고려한 평행 평판 도파관의 해석 결과를 다른 기법의 결과와 비교하여 타당성을 보이고, 이에 바탕을 두어 관통 효과 특성을 산란계수와 임피던스로 도시한다.