• The Journal of Engineering Research
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• v.6 no.2
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• pp.33-38
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• 2004

To investigate the reliability of the MTJs on the roughness of insulating tunnel barrier, we prepared two MTJs with the different uniformity of barrier thickness. Namely, the one has uniform insulating barrier thickness; the other has non-uniform insulating barrier thickness as compared to different thing. As to depositing amorphous layer CoZrNb under the pinning layer IrMn, we achieved MTJ with uniform barrier thickness. Toinvestigate the reliability of the MTJs dependent on the bottom electrode, time-dependent dielectric breakdown (TDDB) measurements were carried out under constant voltage stress. The Weibull fit of out data shows clearly that $t_{BD}$ scales with the thickness uniformity of MTJs tunnel barrier. Assuming a linear dependence of log($t_{BD}$) on stress voltages, we obtained the lifetime of $10^4$years at a operating voltage of 0.4 V at MTJs comprising CoNbZr layers. This study shows that the reliabilityof new MTJs structure was improved due to the ultra smooth barrier, because the surface roughness of the bottom electrode influenced the uniformity of tunnel barrier.

• Proceedings of the KSR Conference
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• 2011.10a
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• pp.1199-1213
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• 2011

Slurry type shield would be very effective for the tunnelling in a sandy ground, but low slurry pressure could cause a tunnel face failure or a ground settlement in front of the tunnel face. Thus, the stability of tunnel face could be maintained by applying an excess slurry pressure that is larger than the active earth pressure. However, the slurry pressure should increase properly because an excessively high slurry pressure could cause the slurry flow out or the passive failure of the frontal ground. It is possible to apply the high slurry pressure without passive failure if a horizontal impermeable layer is located in the ground in front of the tunnel face, but its location, size, and effects are not clearly known yet. In this research, two-dimensional model tests were carried out in order to find out the effect of a horizontal impermeable layer for the slurry shield tunnelling in a saturated sandy ground. As results, larger slurry pressure could be applied to increase the stability of the tunnel face when the impermeable layer was located in the ground above the crown in front of the tunnel face. The most effective length of the impermeable grouting layer was 1.0~1.5D, and the location was 1.0D above the crown level. The safety factor could be suggested as the ratio of the maximum slurry pressure to the active earth pressure at the tunnel face. It could also be suggested that the slurry pressure in the magnitude of 3.5~4.0 times larger than the active earth pressure at the initial tunnel face could be applied if the impermeable layer was constructed at the optimal location.

• Journal of Korean Tunnelling and Underground Space Association
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• v.8 no.4
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• pp.355-363
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• 2006

In this study, it was analyzed how the pore pressure behind a subsea tunnel influences on the stability of the tunnel. The tunnel is located in the soft rock layer, and a soft sandy layer and weathered soil layer are located on the top of it. Coupled numerical analyses are performed for both drained and undrained condition with varying coefficients of lateral earth pressure. In the case of undrained conditions, the stability of the tunnel was analyzed with different thicknesses of shotcrete. On the other hand, a sensitivity analysis was performed with different hydraulic conductivities and porosities of the shotcrete for the drained conditions. The stability of a subsea tunnel was evaluated in terms of safety factor suggested by You et al.(2000, 2001, 2005) based on the shear strength reduction technique. In this paper, the safety factor of a tunnel was calculated under steady state flow condition during hydro-mechanical coupled analysis. As a result, it was found that the stability of a subsea tunnel could be rather increased by allowing a proper amount of groundwater inflow into a subsea tunnel.

• 한국전산유체공학회:학술대회논문집
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• 2010.05a
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• pp.5-9
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• 2010

A numerical wind tunnel simulation is performed in order to predict wind loads acting on a building. The aim of the present study is to suggest a guideline for the numerical wind tunnel analysis, which could provide more detail wind load distributions compared to the wind code and expensive wind tunnel experiments. To validate the present numerical simulation, wind-induced loads on a 6 m cube model is predicted. Atmospheric boundary layer is used as a inlet boundary condition. Various effect of numerical methods are investigated such as size of computational domain, grid density, turbulence model and discretization scheme. The appropriate procedure for the numerical wind tunnel analysis is suggested through the present study.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.406-406
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• 2016

To get high efficiency n-type crystalline silicon solar cells, passivation is one of the key factor. Tunnel oxide (SiO2) reduce surface recombination as a passivation layer and it does not constrict the majority carrier flow. In this work, the passivation quality enhanced by different chemical solution such as HNO3, H2SO4:H2O2 and DI-water to make thin tunnel oxide layer on n-type crystalline silicon wafer and changes of characteristics by subsequent annealing process and firing process after phosphorus doped amorphous silicon (a-Si:H) deposition. The tunneling of carrier through oxide layer is checked through I-V measurement when the voltage is from -1 V to 1 V and interface state density also be calculated about $1{\times}1012cm-2eV-1$ using MIS (Metal-Insulator-Semiconductor) structure . Tunnel oxide produced by 68 wt% HNO3 for 5 min on $100^{\circ}C$, H2SO4:H2O2 for 5 min on $100^{\circ}C$ and DI-water for 60 min on $95^{\circ}C$. The oxide layer is measured thickness about 1.4~2.2 nm by spectral ellipsometry (SE) and properties as passivation layer by QSSPC (Quasi-Steady-state Photo Conductance). Tunnel oxide layer is capped with phosphorus doped amorphous silicon on both sides and additional annealing process improve lifetime from $3.25{\mu}s$ to $397{\mu}s$ and implied Voc from 544 mV to 690 mV after P-doped a-Si deposition, respectively. It will be expected that amorphous silicon is changed to poly silicon phase. Furthermore, lifetime and implied Voc were recovered by forming gas annealing (FGA) after firing process from $192{\mu}s$ to $786{\mu}s$. It is shown that the tunnel oxide layer is thermally stable.

• Journal of the Korean Magnetics Society
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• v.21 no.4
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• pp.121-126
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• 2011

Spin dynamics of magnetic tunnel junctions with free and fixed reference layers is investigated by ferromagnetic resonance micromagnetic simulations. First, in magnetic tunnel junctions with an exchange biased synthetic ferrimagnetic reference layer, a magnetization direction of each layer and the tunneling magnetoresistance are calculated for a DC magnetic field. To investigate the spin exciting modes in magnetic tunnel junctions, we simulate the ferromagnetic resonance frequency spectra with small RF magnetic fields. Exciting modes of the tunneling magnetoresistance calculated by an included angle between free and reference layers is interpreted from those of each layer. Spin exciting modes are different according to a signs of the DC magnetic field. In a negative magnetic field, FMR frequency spectra of free and reference layers are well elucidated by the modified Kittel's equation. However, in a positive magnetic field, there is no simple analytic solution related to FMR frequency spectra due to the coupled modes. Since ferromagnetic layers in magnetic tunnel junctions are interactive each other, careful considerations of the reference and fixed layer as well as the free layer are required for understanding on the spin dynamics of magnetic tunnel junctions with an exchange biased synthetic ferrimagnetic reference layer.

• Journal of the Korean Ceramic Society
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• v.47 no.5
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• pp.461-466
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• 2010

In this study, $Al_2O_3/TaAlO_4/SiO_2$ (A/TAlO/S) structures with tantalum aluminate charge trap layer were fabricated for Nand flash memory device. We evaluated the memory window and retention characteristic as the thickness of the tunnel oxide was varied among 3 nm, 4 nm, and 5 nm. All tunnel oxide thicknesses were measured by ellipsometer and TEM (Transmission Electron Microscope). The A/TAlO/S multi-layer film consisted of 5 nm tunnel oxide showed the best result of memory window of 1.57 V and retention characteristics. After annealing the 5 nm tunnel oxide A/TAlO/S multi-layer film at $900^{\circ}C$. The memory window decreased to 1.32 V. Moreover, the TEM images confirmed that the thickness of multi-layer structure decreased 14.3% after annealing and the program conditions of A/TAlO/S multi-layer film decreased from 13 V to 11 V for 100 ms. Retention properties of both as-deposited and annealed films stably maintained until to $10^4$ cycles.

• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.137-137
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• 2004

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.261-261
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• 2016

플래시 메모리 (flash memory)는 DRAM(dynamic racdom access memory)이나 SRAM(static random access memory)에 비해 소자의 구조가 매우 단순하기 때문에 집적도가 높아서 기기의 소형화가 가능하다는 점과 제조비용이 낮다는 장점을 가지고 있다. 또한, 전원을 차단하면 정보가 사라지는 DRAM이나 SRAM과 달리 전원이 꺼지더라도 저장된 정보가 지워지지 않는다는 특징을 가지고 있어서 ROM(read only memory)과 정보의 입출력이 자유로운 RAM의 장점을 동시에 가지기 때문에 활용도가 크다. 또한, 속도가 빠르고 소비전력이 작아서 USB 드라이브, 디지털 TV, 디지털 캠코더, 디지털 카메라, 휴대전화, 개인용 휴대단말기, 게임기 및 MP3 플레이어 등에 널리 사용되고 있다. 특히, 낸드(NAND)형의 플래시 메모리는 고집적이 가능하며 하드디스크를 대체할 수 있어 고집적 음성이나 화상 등의 저장용으로 많이 쓰이며 일정량의 정보를 저장해두고 작업해야 하는 휴대형 기기에도 적합하며 가격도 노어(NOR)형에 비해 저렴하다는 장점을 가진다. 최근에는 smart watch, wearable device 등과 같은 차세대 디스플레이 소자에 대한 관심이 증가함에 따라 투명하고 유연한 메모리 소자에 대한 연구가 다양하게 진행되고 있으며 유리나 플라스틱과 같은 기판 위에서 투명한 플래시 메모리를 형성하는 기술에 대한 관심이 높아지고 있다. 전하트랩형 (charge trap type) 플래시 메모리는 플로팅 게이트형 플래시 메모리와는 다르게 정보를 절연막 층에 저장하므로 인접 셀간의 간섭이나 소자의 크기를 줄일 수 있기 때문에 투명하고 유연한 메모리 소자에 적용이 가능한 차세대 플래시 메모리로 기대되고 있다. 전하트랩형 플래시메모리는 정보를 저장하기 위하여 tunneling layer, trap layer, blocking layer의 3층으로 이루어진 게이트 절연막을 가진다. 전하트랩 플래시 메모리는 게이트 전압에 따라서 채널의 전자가 tunnel layer를 통해 trap layer에 주입되어 정보를 기억하게 되는데, trap layer에 주입된 전자가 다시 채널로 빠져나가는 charge loss 현상이 큰 문제점으로 지적된다. 따라서 tunnel layer의 막질향상을 위한 다양한 열처리 방법들이 제시되고 있으며, 기존의 CTA (conventional thermal annealing) 방식은 상대적으로 높은 온도와 긴 열처리 시간을 가지고, RTA (rapid thermal annealing) 방식은 매우 높은 열처리 온도를 필요로 하기 때문에 플라스틱, 유리와 같은 다양한 기판에 적용이 어렵다. 따라서 본 연구에서는 기존의 열처리 방식보다 에너지 전달 효율이 높고, 저온공정 및 열처리 시간을 단축시킬 수 있는 마이크로웨이브 열처리(microwave irradiation, MWI)를 도입하였다. Tunneling layer, trap layer, blocking layer를 가지는 MOS capacitor 구조의 전하트랩형 플래시 메모리를 제작하여 CTA, RTA, MWI 처리를 실시한 다음, 전기적 특성을 평가하였다. 그 결과, 마이크로웨이브 열처리를 실시한 메모리 소자는 CTA 처리한 소자와 거의 동등한 정도의 우수한 전기적인 특성을 나타내는 것을 확인하였다. 따라서, MWI를 이용하면 tunnel layer의 막질을 향상시킬 뿐만 아니라, thermal budget을 크게 줄일 수 있어 차세대 투명하고 유연한 메모리 소자 제작에 큰 기여를 할 것으로 예상한다.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.30 no.3C
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• pp.167-174
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• 2010

In this study, numerical analysis has been performed to compare the ground movements in a single ground layer and multiple ground layers due to nearby tunnel excavation. The numerical analysis has been conducted in the different ground layer conditions considering different construction conditions (volume loss at excavation face), and the results of the maximum surface settlement and horizontal displacement have been compared considering the ground layer and construction conditions. In addition, the maximum surface settlement from the numerical analysis has been compared with the maximum settlement at tunnel crown considering the ground layer and construction conditions, and the maximum surface settlement has been also compared with the maximum horizontal displacement with the ground layer conditions. Besides, the volume loss($V_L$) at tunnel excavation face has been compared with the total surface settlement volume($V_s$) with the variation of ground layer condition. The results from the numerical analysis have been compared with field measurements and by this comparison it is believed that the numerical results in this study can be utilized practically in analyzing the nearby ground behavior in different ground layer and construction conditions due to tunnel excavation.