• Korean Journal of Materials Research
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• v.31 no.12
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• pp.719-726
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• 2021

Through the process of chemical vapor deposition, Tungsten Hexafluoride (WF₆) is widely used by the semiconductor industry to form tungsten films. Tungsten Hexafluoride (WF₆) is produced through manufacturing processes such as pulverization, wet smelting, calcination and reduction of tungsten ores. The manufacturing process of Tungsten Hexafluoride (WF₆) is required thorough quality control to improve productivity. In this paper, a real-time detection system for oxidation defects that occur in the manufacturing process of Tungsten Hexafluoride (WF₆) is proposed. The proposed system is implemented by applying YOLOv5 based on Convolutional Neural Network (CNN); it is expected to enable more stable management than existing management, which relies on skilled workers. The implementation method of the proposed system and the results of performance comparison are presented to prove the feasibility of the method for improving the efficiency of the WF₆ manufacturing process in this paper. The proposed system applying YOLOv5s, which is the most suitable material in the actual production environment, demonstrates high accuracy (mAP@0.5 99.4 %) and real-time detection speed (FPS 46).

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.10
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• pp.113-123
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• 1990

Tungsten film was deposited on the single crystal silicon wafer in a low pressure chemical vapor deposition reactor from silane and tungsten hexafluoride in the temperature range of $250-400^{\circ}C$ Deposition rate was found to be determined by the mass transfer rate of reactants from the gas phase to the safter surface. It was found out that tungsten films deposited contained about 3 atomic $\%$ of silicon and that the crystallinity and the grain size increased as the deposition temperature was increased. The resistivity of the film was measured to be in the range of $7~25{\mu}{\Omega}-cm$ and decreased with increasing deposition temperature. The adhesion of the tungsten film on a silicon surface was measured by the tape peel off test and it was improved with increasing deposition temperature. From the analysis of the gas composition, the reaction pathway to form $SiF_{4}$ and $H_{2}$ was found to be more favorable than HF formation.