• 한국전기전자재료학회논문지
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• 제18권6호
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• pp.515-520
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• 2005

CMP(chemical mechanical polishing) process has been attracted as an essential technology of multi-level interconnection. Also CMP process got into key process for global planarization in the chip manufacturing process. In this study, potentiodynamic polarization was carried out to investigate the influences of $H_2O_2$ concentration and metal oxide formation through the passivation on tungsten and titanium. Fortunately, the electrochemical behaviors of tungsten and titanium are similar, an one may expect. As an experimental result, electrochemical corrosion of the $5\;vol\%\;H_2O_2$ concentration of tungsten and titanium films was higher than the other concentrations. According to the analysis, the oxidation state and microstructure of surface layer were strongly influenced by different oxidizer concentration. Moreover, the oxidation kinetics and resulting chemical state of oxide layer played critical roles in determining the overall CMP performance. Therefore, we conclude that the CMP characteristics tungsten and titanium metal layer including surface roughness were strongly dependent on the amounts of hydrogen peroxide oxidizer.

• 한국표면공학회지
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• 제26권1호
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• pp.3-9
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• 1993

Chemical vapor deposited tungsten films were formed in a cold wall reactor at pressures higher (10~120torr) than those conventionally employed (<1torr). SiH4, in addition to H2, was used as the reduction gas. The effects of pressure and reaction temperature on the deposition rate and morphology of the films were ex-amined under the above conditions. No encroachment or silicon consumption was observed in the tungsten de-posited specimens. A high deposition rate of tungsten and a good step coverage of the deposited films were ob-tained at 40~80 torr and at a temperature range of $360~380^{\circ}C$. The surface roughness and the resistivity of the deposited film increased with pressure. The deposition rate of tungsten increased with the total pressure in the reaction chamber when the pressure was below 40 torr, whereas it decreased when the total pressure ex-ceedeed 40 torr. The deposition rate also showed a maximum value at $360^{\circ}C$ regardless of the gas pressure in the chamber. The results suggest that the deposition mechanism varies with pressure and temperature, the surface reac-tion determines the overall reaction rate and (2) at higher pressures(>40 torr) or temperatures(>36$0^{\circ}C$), the rate is controlled by the dtransportation rate of reactive gas molecules. It was shown from XRD analysis that WSi2 and metastable $\beta$-W were also formed in addition to W by reactions between WF6 and SiH4.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.547-548
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• 2006

The main object of this research was to examine the effect of sintering conditions on the microstructure of tungsten heavy alloys and how the resulting modification of the microstructure can be used to optimize their mechanical properties. Alloys composed of 88%, 93% and 95% wt. of tungsten and the balance is Ni: Fe in the ratio of 7:3 were sintered at different temperatures for different sintering holding times in hydrogen atmosphere. It was shown that the mechanical properties of the alloys, and especially their ductility, are harmed when tungsten grains are contiguous.

• 한국재료학회지
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• 제24권5호
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• pp.249-254
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• 2014

Due to their unique properties, tungsten borides are good candidates for the industrial applications where certain features such as high hardness, chemical inertness, resistance to high temperatures, thermal shock and corrosion. In this study, conditions were investigated for producing tungsten boride powder from tungsten oxide($WO_3$) by self-propagating high-temperature synthesis (SHS) followed by HCl leaching techniques. In the first stage of the study, the exothermicity of the $WO_3$-Mg reaction was investigated by computer simulation. Based on the simulation experimental study was conducted and the SHS products consisting of borides and other compounds were obtained starting with different initial molar ratios of $WO_3$, Mg and $B_2O_3$. It was found that $WO_3$, Mg and $B_2O_3$ reaction system produced high combustion temperature and radical reaction so that diffusion between W and B was not properly occurred. Addition of NaCl and replacement of $B_2O_3$ with B successfully solved the diffusion problem. From the optimum condition tungsten boride($W_2B$ and WB) powders which has 0.1~0.9 um particle size were synthesized.

• 한국전기전자재료학회논문지
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• 제24권10호
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• pp.812-816
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• 2011

An optical lens is usually produced in the manner of high temperature compression molding with tungsten carbide alloy molding cores, it is necessary to develop and study technology for super-precision processing of molding cores and coating the core surface. As main methods used in surface improvement technologies using thin film, DLC present high hardness, chemical stability, and outstanding durability of abrasion to be extensively applied in various industrial fields. In this study, the effect of DLC coating of a thin film by means of the FVAS (filtered vacuum arc source) analyzed the characteristics of thin film. Surface roughness before and after DLC coating was measured and the result showed that the surface roughness was improved after coating as compared to before coating. In conclusion, it was observed that DLC coating of the ultra hard alloy core surface for molding had an effect on improving the surface roughness and shape of the core surface. It is considered that this will have an effect on improving abrasion resistance and the service life of the core surface.

• 자원리싸이클링
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• 제31권6호
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• pp.25-35
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• 2022

본 연구는 겔 타입의 음이온교환 수지를 이용하여 바나듐과 텅스텐 이온의 흡·탈착 거동과 분리조건을 규명하였다. 용액의 초기산도에 따른 흡착실험에서 바나듐은 강산성 및 강염기성에서 흡착률이 현저히 낮아지며, 텅스텐은 강염기성에서 흡착률이 낮게 나타났다. 반응온도의 상승은 흡착반응속도 및 최대흡착량의 증가에 영향을 주었으며, 텅스텐은 최대흡착량에 미치는 영향이 미미하였다. 이온교환 수지에 대한 바나듐과 텅스텐의 흡착등온실험은 두 이온 모두 Langmuir 흡착등온식에 적합하였으며, 텅스텐의 경우 폴리옥소메탈레이트화 되어 이온 간의 결합이 이루어져 다분자층 흡착의 형태가 나타나 Freundlich 흡착등온식에도 적합한 것으로 나타났다. 두 이온교환 수지 모두 유사 2차 반응속도모델에서 잘 모사되었으며, 탈착용액의 종류에 따른 바나듐과 텅스텐의 탈착특성에서 바나듐은 HCl 수용액 및 NaOH 수용액 모두 탈착이 이루어 졌으며, 텅스텐은 HCl 수용액에서 탈착이 전혀 이루어지지 않아 탈착공정을 통한 두 이온의 분리가 가능하였다. 탈착반응은 반응 개시 후 30분 이내에 평형에 도달하였으며, 90% 이상 회수가 가능하였다.

• 한국방사선학회논문지
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• 제15권2호
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• pp.101-108
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• 2021

CT는 인체 내 장기의 해부학적 구조를 정확하게 나타낼 수 있으며, 영상의 분해능이 우수하다. Brain CT 검사 시 수정체의 방사선 감수성이 높아서 피폭의 영향을 많이 받는다. 본 연구는 수정체에 피폭선량을 감소하기 위해 비스무스와 텅스텐 필라멘트 차폐물질을 사용하여 Non-shield와 Shield에 대한 피폭선량의 변화와 차폐율을 비교 하고자 한다. 본 연구에서는 3D printing으로 제작한 비스무스, 텅스텐 필라멘트 차폐물질을 사용하여, 차폐물질 두께와 slice에 따라 피폭되는 선량을 측정하였다. 헤드팬텀을 고정시켜 안구에 Magicmax universal 선량계를 위치시켜 차폐 물질을 놓지 않았을 경우와 그 위에 차폐 물질을 놓았을 때 차폐율을 각각 비교하기 위해 두 물질을 1mm ~ 5mm 두께로 각각 측정하였다. 1 mm 두께의 필라멘트에서 비스무스 필라멘트는 26.8 %, 텅스텐 필라멘트는 43.1 % 차폐율이 나타났다. 따라서 비스무스 필라멘트보다 텅스텐 필라멘트에서 더 큰 차폐효과가 나타났다. 차폐체의 종류, 두께, 슬라이스 간격에 따라 선량을 측정한 결과, 비스무스 필라멘트 보다 텅스텐 필라멘트가 더 큰 차폐효과가 나타났다.

• Nuclear Engineering and Technology
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• 제54권6호
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• pp.1947-1953
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• 2022

As the plasma facing material in the nuclear fusion reactor, tungsten has to bear the irradiation impact of high energy particles. The surface quality of tungsten may affect its irradiation resistance, and even affect the service life of fusion reactor. In this paper, tungsten samples with different surface quality were polished by mechanical processing, subsequently conducted by D₂⁺ implantation and thermal desorption. D₂⁺ implantation was performed at room temperature (RT) with the irradiation dose of 1 × 10²¹ D₂⁺/m² by 5 keV D₂⁺ ions, and thermal desorption spectroscopy measurements were done from RT to 900 K. In addition, He irradiation was also performed by 50 eV He⁺ ions energy with the fluxes of 5.5 × 10²¹ m^-2s^-1 and 1.5 × 10²² m^-2s^-1, respectively. Results reveal that the hydrogen/helium irradiation behavior are both related to surface quality. Samples with high surface quality has superior D₂⁺ retention behavior with less D₂ retained after implantation. However, such samples are more likely to generate fuzzes on the surface after helium irradiation. Different morphologies (smooth, wavy, pyramids) after helium irradiation also demonstrates that the surface morphology is related to tungsten crystallographic orientation.

• 한국진공학회지
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• 제1권3호
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• pp.376-381
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• 1992

Tungsten silicide films were deposited on the highly phosphorus-doped poly Si/SiO2/Si substrates by Low Pressure Chemical Vapor Deposition. They were heat treated in different conditions. XTEM, SIMS and high frequency C-V analysis were conducted for characterization. It can be concluded that outdiffusion of phosphours impurity throught the silicide films lead to its depletion in the poly-Si gate region near the gate oxide, resulting in loss of capacitance and increase of effective gate oxide thickness.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2004년도 International Symposium on Powder Materials and Processing
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• pp.50-51
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• 2004