• Journal of the Korean Chemical Society
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• v.13 no.1
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• pp.49-55
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• 1969

X-ray Fluorescence Spectrographic method has been applied for the rapid determination of main components, such as $SiO_2$, $Al_2O_3$, $Fe_2O_3$, CaO, MgO and $K_2O$ in Silicate Minerals. In this method, Boric Acid was used as a binder after fusion with Lithium Tetraborate in the briquet-making process. The Lithium Flubride, Ammonium di-Hydrogen Phosphate and Ethylene Diamine d-Tartrate crystals were used with Scintillation counter and Gas Flow counter as the detectors. Several influences on this method were discussed, including the particle size of samples and reducing of the matrix effects by dilution with Boric Acid and addition of Lanthanum Oxide with the diluent. In order to test the reproducibility of this method described above, the determination of the same kind of samples were carried out repeatedly, and the results obtained were presented in the table. Calibration curves for each element were presented, and the application of the method was tested with International Rock Standard T-Ⅰ. All the results obtained by X-Ray Fluorescence Spectrographic method were compared with the results by conventional chemical method.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.9
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• pp.19-27
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• 2002

Characteristics of interconnect lines considering underlayer geometries of a silicon substrate and crossing metal lines are experimentally analyzed through elaborately devised patterns. In this work, test patterns for transmission lines having several kinds of underlayer geometries were devised, and the signal characteristics and responses are measured by S-parameter and time domain reflection meter (TDR). The patterns were designed and fabricated with a deep-submicron CMOS DRAM technology having 1 Tungsten and 2 Aluminum metals. From the analysis of measured results on the patterns, it is founded that the effects of underlayter line structures on line parameters (especially line capacitance and resistance) and signal distortions occurred from them cannot be negligible. The results provide useful and insightful understanding in the skew balance of package leads and global signal lines such as high-speed clock and data lines.

• Journal of the Korean Society of Safety
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• v.15 no.3
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• pp.66-70
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• 2000

In order to cope with environmental problems caused by harmful gases emitted from various industrial sources, a new technology which employs discharge plasma formed in ordinary atmospheric pressure has been intensively investigated in many industrialized nations. Although a plenty of useful outcomes and suggestions have been made public by scientists in this field, few commercial products which effectively decompose pollutant gases have appeared as yet. This is partly because that the energy efficiency of a most effective plasma reactor has not reached a satisfactory level in comparison with those of devices using conventional technologies. In an attempt to solve the problem mentioned above, we noticed to combine heterogeneous electrical discharges. This concepts is based on that each plasma reactor has its specific spatial region in which chemical reaction are active and by electrically affected with another reactor of different type, the activated region would increase - which may lead to cutting down the energy consumption. To prove this concept experimentally, two different discharge equipments, a plane ceramic-based surface discharge electrode and a corona electrode with tungsten needle may, are selected and combined to fabricate a hybrid plasma reactor. The results are summarized as follows; (1) Ozone concentration generated in the plasma region drastically increases when the positive corona discharge is added to the surface discharge. The rate of increase of ozone depends on the frequency of the surface discharge. The negative corona, however, does not contribute to the improvement of the ozone generation. (2) NO(nitrogen monoxide) decomposition rate also improves by simultaneously applying the surface and the positive corona discharges. The effect of the corona superposition is more evident when the level of the surface discharge is moderate. (3) By adjusting the corona level, the net energy efficiency during NO decomposition improves in comparison with the simple surface discharge reactor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.271-274
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• 2003

[ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin films of different thickness were pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $4500\;{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800\;^{\circ}C$ in air, respectively, The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was difference in the crystal structure with heat-treatment temperature, and the electric properties depended on the heating temperature and the seed-layer thickness. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15\;{\mu}C/cm^2$, the coercive field (Ec) 65 kV/cm, and the dielectric constant 1492, respectively.

• Journal of the Korean Society of Tobacco Science
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• v.16 no.1
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• pp.26-33
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• 1994

A tobacco ripeness grading meter was designed and constructed using the color sensor, its performance was evaluated. A degree of ripeness grading of a leaf is very closely related to the measured tobacco leaf color. Measuring the small amount of the reflectance precisely depends on the apparatus including color sensor, light source, detector sensitivity, and geometric characteristics of appratus. To analyze and minimize the variational effects, experiments to select the proper condition were performed. Because of the combined effect mentioned above, the system has some variation on its response. Basis on the results of the experiments, prototype was developed and interfaced to a computer system. The main components of prototype included a tungsten lamp as a light source, Amorphous full color sensor with three filters, regulated D.C. power supply, OP - AMP(741 TC) for amplification, AR - B3001 board for interfacing to a computer with analog to digital conversion, and a compatible IBM PC XT computer. The experimental results of the developed ripeness tobacco leaf measurement system are summarized as following: [1] The output readings of ripeness grade meter for tobacco leaf, which is based on harvesting time, showed the apparent difference in variety of different quality. It was considered suitable that three filters(red, green, blue) in Amorphous full color sensor could be used in four different ripeness degree measurement of tobacco leaf. [2] The output readings of ripeness grade meter for tobacco leaf, which is based on government procurement, showed apparent difference in variety of different quality. Tobacco leaf varieties to stalk position are divided into tips, leaf, cutters, and primings, It is considered suitable that only red filter in the sensor could be used to classify the grade of tobacco leaf within the same kind tobacco stalk. However, the ripeness grade meter was not adequate to classify all the tobacco grades in the four different tobacco leaves.

• Journal of the Korean Society for Nondestructive Testing
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• v.24 no.1
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• pp.29-37
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• 2004

The effect of the substitution of Tungsten(W) for Molybdenum(Mo) on the creep behaviour of 22Cr-5Ni duplex stainless steel(DSS) has been investigated. Creep tests were carried out at $600^{\circ}C\;and\;650^{\circ}C$. Intermetallic ${\sigma}$ phase is precipitated during creep at $650^{\circ}C$, at which creep rupture time was much lower compared with at $600^{\circ}C$. The substitution of W for Mo in the duplex stainless steel was known to retard the formation of ${\sigma}$ phase. Minimum creep rate and creep rupture time, however, were hardly influenced by the substitution of 2wt.% W. An ultrasonic measurement for the creep specimens has been carried out for the evaluation of creep damage. The sound velocity increases propotionally with the increase of creep rupture time at $600^{\circ}C$ of creep temperature. On the contrary, the sound velocity decreases with the increase of rupture time at $650^{\circ}C$, which can be correlated with the microstructural evolution during creep.

• Progress in Medical Physics
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• v.32 no.1
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• pp.18-24
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• 2021

Purpose: Kilovoltage computed tomography (kV-CT) is essential for radiation treatment planning. However, kV-CT images are significantly distorted by artifacts when a metallic prosthesis is present in the patient's body. Thus, the accuracies of target delineation and treatment dose calculation are inevitably lowered. We evaluated the accuracy of the calculated doses using an image restoration method with hybrid CT, which was introduced in our previous study. Methods: A cylindrical phantom containing four metals, namely, silver, copper, tin, and tungsten, was scanned using kV-CT and megavoltage CT to produce hybrid CT images. We created six verification plans for three head and neck patients on kV-CT and hybrid CT images of the phantom and calculated their doses. The actual doses were measured with film patches during beam delivery using tomotherapy. We used the gamma evaluation method to compare dose distribution between kV-CT and hybrid CT with three gamma criteria, namely, 3%/3 mm, 2%/2 mm, and 1%/1 mm. Results: The gamma pass rates decreased as the gamma criteria were strengthened, and the pass rate of hybrid CT was higher than that of kV-CT in all cases. When the 1%/1 mm criterion was used, the difference in gamma pass rates between them was up to 13%p. Conclusions: According to our findings, we expect that the use of hybrid CT can be a suitable approach to avoid the effect of severe metal artifacts on the accuracy of dose calculation and contouring.

• Tribology and Lubricants
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• v.38 no.4
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• pp.162-169
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• 2022

Cobalt-chromium (CoCr)-based alloys have been used for wear applications because of their excellent mechanical properties and wear resistance. With growing concern over environmental problems, CoCr alloys are expected to be used for various tribological applications in degraded lubrication states. To expand the applicability of the materials, data should be accumulated across a broad spectrum of experimental parameters. In this work, the friction and wear characteristics of cobalt-chromium-tungsten (CoCrW) and cobalt-chromium-molybdenum (CoCrMo) alloys are investigated experimentally. The tests are conducted using a pin-on-reciprocating-plate tribotester in dry lubrication. CoCrW and CoCrMo are used as pin and plate materials to investigate the effect of the counter material. The results show that the friction coefficients between CoCrW and CoCrMo generally range from 0.4 to 0.5. The friction coefficient between the CoCrW pin and plate is found to be slightly small. However, the total wear between the CoCrW pin and plate is found to be the largest. In contrast, the total wear between the CoCrW pin and plate is relatively small. Furthermore, CoCrW may cause a faster wear progression of CoCrMo, especially for the case in which CoCrMo is used as the pin material. The results of this work provide a better understanding of the tribological properties of CoCrW and CoCrMo alloys. In addition, this work provides a practical guideline for the use of CoCrW and CoCrMo from the tribological design viewpoint.

• Journal of the Korean Society for Heat Treatment
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• v.36 no.5
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• pp.298-302
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• 2023

Transparent and conducting tungsten (W) doped indium oxide (IWO) thin films were deposited on the glass substrate by using RF magnetron sputtering and then electron irradiation was conducted to investigate the effect of electron irradiation on the optical and electrical properties of the films. The electron irradiated films showed three x-ray diffraction peaks of the In₂O₃ (222), (431) and (046) planes and the full width at half maximum values are decreased as increased electron irradiation energy. In the atomic force microscope analysis, the surface roughness of as deposited films was 1.70 nm, while the films electron irradiated at 700 eV, show a lower roughness of 1.28 nm. In this study, the figure of merit (FOM) of as deposited films is 2.07 × 10^-3 Ω^-1, while the films electron irradiated at 700 eV show the higher FOM value of 5.53 × 10^-3 Ω^-1. Thus, it is concluded that the post-deposition electron beam irradiation is the one of effective methods to enhance optical and electrical performance of IWO thin films.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.