• Journal of Korean Society for Atmospheric Environment
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• 제24권E1호
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• pp.1-11
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• 2008

Mercury (Hg), which is mainly emitted from coal-fired power plants, remains one of the most toxic compounds to both humans and ecosystems. Hg pollution is not a local or regional issue, but a global issue. Hg compounds emitted from anthropogenic sources such as coal-fired power plants, incinerators, and boilers, can be transported over long distances. Since the last decade, many European countries, Canada, and especially the United States, have focused on technology to control Hg emissions. Korea has also recently showed an interest in managing Hg pollution from various combustion sources. Previous studies indicate that coal-fired power plants are one of the major sources of Hg in Korea. However, lack of Hg emission data and feasible emission controls have been major obstacles in Hg study. In order to achieve effective Hg control, understanding the characteristics of current Hg sampling methods and control technologies is essential. There is no one proven technology that fits all Hg emission sources, because Hg emission and control efficiency depend on fuel type, configuration of air pollution control devices, flue gas composition, among others. Therefore, a broad knowledge of Hg sampling and control technologies is necessary to select the most suitable method for each Hg-emitting source. In this paper, various Hg sampling methods, including wet chemistry, dry sorbents trap, field, and laboratory demonstrated control technologies, and international regulations, are introduced, with a focus on coal-fired power plants.

• 자원환경지질
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• 제29권4호
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• pp.455-470
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• 1996

Mesozoic granitic rocks in the Korean peninsula contain $H_2$, $CH_4$, CO and rare $C_2H_6$. The Jurassic Daebo granites mostly belonging to the ilmenite series are predominated in $CH_4$. Meanwhile, the magnetite series Bulguksa granites of Cretaceous age in the Kyongsang basin and Okchon zone are relatively enriched in $CO_2$. The older granites have a wide variation of $CH_4/CO_2$ ratios (0.1~1.0) compared to those of the younger ones (0.1~0.5). This characteristics of gas compositions suggest that the Jurassic granites are principally derived from the partial melting of metasedimentary rocks with much reducing materials in the lower continental crust. On the other hand, the mantle source granitic magmas might be responsible for the Cretaceous granites characterized by dominant and homogeneous $CO_2$ gas compositions. Liquid-vapor homogenization temperatures of quartz in the Jurassic and Cretaceous granites range from 108 to $539^{\circ}C$ (av. $324^{\circ}C$) and 160 to $556^{\circ}C$ (av. $358^{\circ}C$), respectively. Their salinities are between 0.2 and 16.3 wt.% NaCl for the Jurassic granites and 0.4, and 15.6 wt.% NaCl for the Cretaceous ones. Fluid inclusions with solid daughter minerals lying on or near the halite equilibrium curve represent inclusion fluids from the magmatic stage. The type I and II fluid inclusions which are plotted apart from the equilibrium curve are considered to trap in late hydrothermal alteration stage with a increasing influx of metedric water.

• 센서학회지
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• 제8권2호
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• pp.95-101
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• 1999

반도체 센서(p-MOSFET)가 이온화 방사선에 노출되면 산화층내에 전자-정공이 생성되고, 이들 중에서 이동도가 낮은 정공은 이동중 산화층내에 트랩(trap)되어 센서의 출력 특성을 변화시킨다. 본 논문에서는 p-MOSFET를 방사선 누적선량 모니터링 센서로 활용하기 위해 국산 및 일산의 상용 p-MOSFET를 Co-60 $\gamma$선원을 갖춘 고준위 조사시설에서 조사한 후 출력특성의 변화를 분석하였다. 방사선 조사실험 결과 p-MOSFET는 조사된 누적 방사선량에 비례하여 문턱전압(threshold voltage, $V_T$)이 변화됨과 이 변화에는 선형적 특성을 지님을 알 수 있었다. 본 논문의 결과를 통하여 저가의 상용 p-MOSFET를 이용한 우수한 성능의 방사선 누적선량 모니터링 센서를 개발할 수 있음을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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• pp.163-166
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• 2002

We investigated structural and electrical properties of Metal-Oxide-Semiconductor(MOS) structure using Hafnium $oxide(HfO_{2})$ as high-k gate dielectric material. $HfO_{2}$ films are ultrathin gate dielectric material witch have a thickness less than 2.0nm， so it is spotlighted to be substituted $SiO_{2}$ as gate dielectric material. In this paper We have grown $HfO_{2}$ films with pt electrode on P-type Silicon substrate by RF magnetron sputtering system using $HfO_{2}$ target and oserved the property of semiconductor-oxide interface. Using pt electrode, it is necessary to be annealed at ${300^{\circ}C}$. This process is to increase an adhesion ratio between $HfO_{2}$ films with pt electrode. In film deposition process, the deposition time of $HfO_{2}$ films is an important parameter. Structura1 properties are invetigated by AES depth profile, and electrical properties by Capacitance-Voltage characteristic. Interface trap density are measured to observe the interface between $HfO_{2}$ with Si using High-frequency(1MHz) C-V and Quasi - static C-V characteristic.

• 한국전기전자재료학회논문지
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• 제16권4호
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• pp.292-297
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• 2003

We fabricated a single crystal silicon thin film transistor for active matrix organic light emitting displays(AMOLEDs) using silicon on insulator wafer (SOI wafer). Poly crystal silicon thin film transistor(poly-Si TFT) Is actively researched and developed nowsdays for a pixel switching devices of AMOLEDs. However, poly-Si TFT has some disadvantages such as high off-state leakage currents and low field-effect mobility due to a trap of grain boundary in active channel. While single crystal silicon TFT has many advantages such as high field effect mobility, low off-state leakage currents, low power consumption because of the low threshold voltage and simultaneous integration of driving ICs on a substrate. In our experiment, we compared the property of poly-Si TFT with that of SOI TFT. Poly-Si TFT exhibited a field effect mobility of 34 $\textrm{cm}^2$/Vs, an off-state leakage current of about l${\times}$10$\^$-9/ A at the gate voltage of 10 V, a subthreshold slope of 0.5 V/dec and on/off ratio of 10$\^$-4/, a threshold voltage of 7.8 V. Otherwise, single crystal silicon TFT on SOI wafer exhibited a field effect mobility of 750 $\textrm{cm}^2$/Vs, an off-state leakage current of about 1${\times}$10$\^$-10/ A at the gate voltage of 10 V, a subthreshold slope of 0.59 V/dec and on/off ratio of 10$\^$7/, a threshold voltage of 6.75 V. So, we observed that the properties of single crystal silicon TFT using SOI wafer are better than those of Poly Si TFT. For the pixel driver in AMOLEDs, the best suitable pixel driver is single crystal silicon TFT using SOI wafer.

• 한국터널지하공간학회 논문집
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• 제19권5호
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• pp.733-747
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• 2017

터널을 굴착하면 터널주변과 상부의 지반이 느슨해지고 변형되며, 이로 인해 터널주변지반의 응력이 변화된다. Terzaghi는 터널굴착으로 인한 천단 상부지반의 이완형태를 Trapdoor 실험을 통해 규명하였다. 그러나 Terzaghi는 터널천단부가 등변위 되는 조건만 생각하였으며, 터널천단부가 오목곡선이나 볼록곡선 등의 형태로 변형될 경우에 대해서는 생각하지 않았다. 따라서 본 과제에서 지반이완 형태와 터널천단부 변위형태의 상관관계에 대하여 실험적으로 연구하였다. 이를 위하여 터널천단부의 이완형태를 등변위, 오목곡선, 볼록곡선의 세가지 형태로 모사하여 실험을 수행하고 그 결과를 비교 하였다. 실험결과 이완지반의 하중전이는 지반변형특성에 따라 다양한 형태로 발생될 수 있음을 확인하였다.

• 약학회지
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• 제59권5호
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• pp.207-214
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• 2015

P2Y receptors, a type of P2 receptor family, are G-protein coupled receptors and 8 subtypes have been characterized ($P2Y_1$, $P2Y_2$, $P2Y_4$, $P2Y_6$, $P2Y_{11-14}$). Recently, several studies have shed light on the role of P2Y receptors in bone biology. Among them, little is known on the role of $P2Y_6$ receptor on osteoclast differentiation. Thus, we investigated the role of $P2Y_6$ receptor on osteoclastogenesis using $P2Y_6$ receptor selective antagonist, MRS 2578. When osteoblasts and bone marrow cells were co-cultured in the presence of $VitD_3$ and $PGE_2$, $P2Y_6$ antagonist increased the formation of TRAP positive osteoclasts. To elucidate the target cells of $P2Y_6$ antagonist, we first checked the effect of MRS 2578 on osteoblasts. Treatment of MRS 2578 did not affect OPG : RANKL mRNA ratio in osteoblasts. Next, we checked the effects of $P2Y_6$ antagonist on osteoclast precursors using mouse bone marrow macrophages (BMMs). Addition of MRS 2578 increased the number of osteoclasts in RANKL-treated BMMs. Although $P2Y_6$ antagonist had no effect on RANKL-induced NFATc1, c-Fos and MafB expression levels, it significantly stimulated RANKL-induced Blimp1 mRNA expression in BMMs. Taken together, these data indicate that $P2Y_6$ antagonist increases osteoclast formation by upregulation of Blimp1 expression.

• 전기전자학회논문지
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• 제19권4호
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• pp.486-490
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• 2015

기존의 MOS 구조를 갖는 온도 센서가 가지는 누설 전류 문제를 해결하기 위하여 제안된 $Bi_2Mg_{2/3}Nb_{4/3}O_7$ (BMNO) 를 이용한 온도센서의 민감도 평가를 저주파 누설 전류 측정을 통하여 수행하였다. 측정결과에서 서로 다른 어닐링 온도 ( $600^{\circ}C$, $700^{\circ}C$, $800^{\circ}C$) 에 따른 서로 다른 패턴의 저주파 노이즈 특성을 얻을 수 있었으며, 그 결과에서 온도 센서 동작을 저해할 수 있는 공정 조건($700^{\circ}C$) 을 선별하는 결과를 얻을 수 있었다. 이와 같은 측정법은 향후 BMNO를 이용한 온도센서의 공정 최적화를 측정하는 방법으로 응용 될 수 있다.

• E2M - 전기 전자와 첨단 소재
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• 제9권1호
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• pp.30-37
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• 1996

Previously, crystallization of a-Si:H films on glass substrates were limited to anneal temperature below 600.deg. C, over 10 hours to avoid glass shrinkage. Our study indicates that the crystallization is strongly influenced by anneal temperature and weakly affected by anneal duration time. Because of the high temperature process and nonconducting substrate requirements for poly-Si TFTs, the employed substrates were limited to quartz, sapphire, and oxidized Si wafer. We report on poly-Si TFT's using high temperature anneal on a Si:H/Mo structures. The metal Mo substrate was stable enough to allow 1000.deg. C anneal. A novel TFT fabrication was achieved by using part of the Mo substrate as drain and source ohmic contact electrode. The as-grown a-Si:H TFT was compared to anneal treated poly-Si TFT'S. Defect induced trap states of TFT's were examined using the thermally stimulated current (TSC) method. In some case, the poly-Si grain boundaries were passivated by hydrogen. A-SI:H and poly-Si TFT characteristics were investigated using an inverted staggered type TFT. The poly -Si films were achieved by various anneal techniques; isothermal, RTA, and excimer laser anneal. The TFT on as grown a-Si:H exhibited a low field effect mobility, transconductance, and high gate threshold voltage. Some films were annealed at temperatures from 200 to >$1000^{\circ}C$ The TFT on poly-Si showed an improved $I_on$$I_off$ ratio of $10_6$, reduced gate threshold voltage, and increased field effect mobility by three orders. Inverter operation was examined to verify logic circuit application using the poly Si TFTs.

• 한국전기전자재료학회논문지
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• 제24권6호
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• pp.433-439
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• 2011

Poly Si TFTs (poly silicon thin film transistors) with p channel those are annealed HT (high temperature) with gate poly crystalline silicon and LT (low temperature) with metal gate electrode were fabricated on quartz substrate using the analyzed data and compared according to the activated grade silicon thin films and the size of device channel. The electrical characteristics of HT poly-Si TFTs increased those are the on current, electron mobility and decrease threshold voltage by the quality of particles of active thin films annealed at high temperature. But the on/off current ratio reduced by increase of the off current depend on the hot carrier applied to high gate voltage. Even though the size of the particles annealed at low temperature are bigger than HT poly-Si TFTs due to defect in the activated grade poly crystal silicon and the grain boundary, the characteristics of LT poly-Si TFTs were investigated deterioration phenomena those are decrease the electric off current, electron mobility and increase threshold voltage. The results of transconductance show that slope depend on the quality of particles and the amplitude depend on the size of the active silicon particles.