• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1988.05a
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• pp.13-16
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• 1988

In this paper, image storage and display of scattering mode using 7/65/35 PLZT ceramics was studied. Scattering in a ferroelectric poly-crystal depends on its grain size and domain orientations. 7/65/35 PLZT ceramics is ferroelectric and transparent. Image can be stored in the ceramic substrate by poling it selectively through a pair of electrodes with the pattern or a set of a photoconductivity film and two transparent electrodes.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.9
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• pp.873-877
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• 2006

We have fabricated top omission organic light emitting diodes with transparent Ba/Ag double layer cathodes deposited by using thermal evaporation method. The device structure was $glass/Ni(200nm)/2-TNATA(15 nm)/{\alpha}-NPD(15nm)Al_{q3}:C545T\;(1%,\;35nm)/BCP(5nm)/Ba(10nm)/Ag(8nm)$. The optical transmittance of the Ba(10 nm)/Ag(8 nm) layer was over 60 % in the visible wavelength region. The maximum efficiency of the device was $13.7\;cd/A\;at\;0.69\;mA/cm^{2}$ and the efficiency of over 10 cd/A was achieved at wide range of current densities and luminances.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.179-180
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• 2008

In this paper, we studied the optical property of transparent glasses for photovoltaic module manufacturing. The glass should have high mechanical and chemical resistance from outside environmental. Also optical transparency is a key requirement for better electrical performance. In here, we examine several kinds of transparent glasses and special purpose ones. This would give some real information for understanding PV module. The further analysis is described in the following paper.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.7
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• pp.481-485
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• 2018

In this study, oxide/metal/oxide-type transparent electrodes based on Al and ZnO were investigated. Thin films of these materials were sputter-deposited at room temperature. To evaluate the thickness dependence of the oxide layers, the top and bottom ZnO layers were varied in the range of 5~80 nm and 2.5~20 nm, respectively. When the thicknesses of the top and bottom ZnO layers were fixed at 30 nm and 2.5 nm, a maximum transmitance of 66% and sheet resistance of $16.5{\Omega}/{\square}$ were achieved, which is significantly improved compared with the Al layer without top and bottom ZnO layers showing a maximum transmitance of 44.3% and sheet resistance of $44{\Omega}/{\square}$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.3
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• pp.146-150
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• 2014

As a method of simple patterning of transparent conductive oxide (TCO) films deposited on flexible substrates, laser direct etching was carried out on TCO films sputtered on polycarbonate (PC) substrates. As a result of different binding energies in TCO films, indium tin oxide (ITO) and indium gallium zinc oxide (IGZO) were more easily etched than zinc oxide with different $Nd:YVO_4$ laser beam conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.525-528
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• 2001

ZnO:Al thin film can be used as a transparent conducting oxide(TCO) which has low electric resistivity and high optical transmittance for the front electrode of amorphous silicon solar cells and display devices. This study of electrical, crystallographic and optical properties of Al doped ZnO thin films prepared by Facing Targets Sputtering (FTS), where strong internal magnets were contained in target holders to confine the plasma between the targets, is described. Optimal transmittance and resistivity was obtained by controlling flow rate of O$_2$ gas and substrate temperature. When the of gas rate of 0.3 and substrate temperature 200$^{\circ}C$ , ZnO:Al thin film had strongly oriented c-axis and lower resistivity(<10$\^$-4/Ω-cm).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.8
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• pp.483-485
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• 2014

Transparent amorphous In-Si-O (ISO)/Ag/In-Si-O (ISO) has been reported for low emissivity (low-e) applications. Effective Si doping into the $In_2O_3$ matrix led to a completely amorphous ISO film as well as a low resistivity and a high optical transmittance. The optical and electrical performances were examined by measuring transmittance with a UV-VIS spectrophotometer and resistivity with a Hall effect measurement. Consequently, low-e glass with ISO/Ag/ISO showed a high transparency in the visible region and low emissivity in the infrared region, indicating that ISO is a promising amorphous transparent electrode for low-e glass.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.103-104
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• 2006

Transparent conductive oxide (TCO) are necessary as front electrode for increased efficiency of LED. In our paper, transparent conducting alminum-doped Zinc oxide films (AZO) were prepared by rf magnetron sputtering on glass (corning 1737) substrate, were then annealed at temperature $400^{\circ}C$ for 2hr. The smooth AZO films were etched in diluted HCL (0.5%) to examine the surface morphology properties as a variation of the time. The surface morphology of AZO films increased as a time. We observed texture structure of AZO thin film etched for 1min.

• Journal of the Korean Solar Energy Society
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• v.28 no.5
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• pp.8-13
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• 2008

In this study, we analyze the electrical optical characteristics of transparent glass for photovoltaic and glass-glass module application. The elemental facts from raw glass to laminated glass with solar cells are analyzed using UV spectrophotometer and spectroradiometer. From the data of transmittance and reflectance, the optimum PV module processing condition and selection of material for fabrication should be considered deeply for obtaining high module efficiency. Also we introduce two glasses which has 2%$\sim$4% higher transmittance using coating technology with anti-reflection material. From this experiment, we try to give some basic information for PV module manufacturing industry. The detail description is specified as the following paper.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.10-10
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• 2009

Transparent BNO thin films were grown on Al-doped ZnO (AZO)/Ag/AZO/polyethersulfon (PES) (abbreviated as AAAP) transparent electrodes at a low temperature by the NCD technique. The BNO films grown on the crystallized AZO/Ag/AZO (AAA) electrodes exhibit an amorphous phase with a root mean square (rms) roughness of approximately 2 nm in the range of deposition temperature. The capacitors (Pt/BNO/AAAP) with BNO films grown at $100^{\circ}C$ show a dielectric constant of 24 and dissipation factor of 8% at 100 kHz, a leakage current density of about $8{\times}10^{-6}A/cm^2$ at an applied voltage of 1.0V. The optical transmittances of the BNO/AAAP exhibited above 80% at wavelength of 550nm at all of deposition temperature. The mechanical stability of the BNO/AAA as well as AAA electrode with the PES substrates through the bending was ensured for flexible electronic device applications. The transparent BNO capacitors grown on AAAP are powerful candidate for integration with the transparent solar cells.