• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.535-538
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• 2004

Zinc Oxide (ZnO) films have attracted considerable attention for transparent conducting films, because of their high conductivity, good optical transmittance from UV to near IR as well as a low-cost fabrication. To increase the conductivity of ZnO, doping of group III elements (Al, Ga, In and B) has been carried out. Transparent conducting films have been applied for optoelectric devices, the development of the transparent conducting thin films on flexible light-weight substrates are required. In this research, the transparent conducting ZnO thin films doped with Aluminum (Al) on polymer substrates were deposited by the RF magnetron suputtering method, and the structural, optical and electrical properties were investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.32 no.4
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• pp.296-301
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• 2019

A multiple-electrode-type electronic paper film can implement a single color and control the transparency, as it has multiple electrodes in one cell. Therefore, it can be used as a transparent display. In this paper, we explain the structure and driving method of a transparent electronic paper display, and then propose a control method of transmittance. Subsequently, we verify the theory by measuring the transmittance via experiment. Thus, by changing the manner of applying the voltage to three lower electrodes and one upper electrode, transmittance in eight cases could be realized. It was confirmed that the transmittance derived from the experiment could be controlled from a minimum of 6.75% to a maximum of 71.18%.

• The International Journal of Costume Culture
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• v.8 no.1
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• pp.32-42
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• 2005

This paper aims to propose fashion designs based on the application of art flower technique to translucent clothing material. For study method, firstly I looked into art flower applications occurred in modern trend since 2000 as well as theoretical research on art flower and transparency expressed as artificial beauty. Second, I attempt to express transparency in a variety of unique ways by using the art flower technique in producing clothes. Third, I utilized transparent flower with translucent clothing material and tried to suggest fashion design attempting mixture of new materials. As a result, firstly transparent image and material are well fitted in with modern trend and especially it was very suitable for expressing feminine beauty. Second, transparency was the element to suggest creative formative world in fashion design in regard to flower's beauty, various shapes and colors and to provide infinite materials as design motive. Third, the combination of knit clothing and plastic art flower displayed a new form of material combination. Especially as translucent material is fitted with trend such as function, lightness and variableness in modern times of the $21^{st}$ century, it presents beautiful combination with transparent flower. Fourth, Silk flower technique is variously used in art flower techniques. Various possibility ranges are presented such as flower was recreated with artificial image by silk flower technique to be newly expressed and various materials like aesthete film can be also expressed with silk flower technique.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.417-417
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• 2009

Although a transparent conductive film (TCF) belongs to essential supporting materials for many device applications such as touch screens, flat panel displays, and sensors, a conventional transparent conductive material, indium-tin oxide (ITO), suffers from considerable drawback because the price of indium has soared since 2001. Despite a recent falloff, a demand of ITO is expected to increase sharply in the future due to the trend of flat panel display technologies toward flexible, paper-like features. There have been recently extensive studies to replace ITO with new materials, in particular, carbon nanotubes (CNTs) since CNTs possess excellent properties such as flexibility, electrical conductivity, optical transparency, mechanical strength, etc., which are prerequisite to TCFs. This study fabricated TCFs with single-walled carbon nanotubes (SWCNTs) produced by arc discharge. The SWCNTs were dispersed in water with a surfactant of sodium dodecyl benzene sulfonate (NaDDBS) under sonication. Carbon black and fullerene nanoparticles were added to the SWCNT-dispersed solution to enhance contact resistance between CNTs. TCFs were manufactured by a filtration and transfer method. TCFs added with carbon black and fullerene nanoparticles were characterized by scanning electron microscopy (SEM), UV-vis spectroscopy (optical transmittance), and four-point probe measurement (sheet resistance).

• Electrical & Electronic Materials
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• v.8 no.6
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• pp.699-707
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• 1995

The material that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. It has many fields of application such as Solar Cell, Liquid Crystal display, Vidicon on T.V, transparent electrical heater, selective optical filter, and a optical electric device , etc. In the recent papers on several TCO( transparent conducting oxide ) material, the study is mainly focusing on ITO(indium tin oxide) because ITO shows good results on both optical and electrical properties. Nowaday, in the development of LCD(Liquid Crystal display), the low temperature process to reduce the production cost and to deposit ITO on polymer substrate (or low melting substrate) has been demanded. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. The resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140.deg. C. is 1.6*10$\^$-4/.ohm..cm with 85% optical transmission in viaible ray.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.806-811
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• 2017

An all-transparent ultraviolet (UV) photodetector was fabricated by structuring $p-NiO/n-SnO_2/ITO$ on a glass substrate. $SnO_2$ is an important semiconductor material because of its large bandgap, high electron mobility, high transmittance (as high as 80% in the visible range), and high stability under UV light. For these reasons, $SnO_2$ is suitable for a range of applications that involve UV light. In order to form a highly transparent p-n junction for UV detection, $SnO_2$ was deposited onto a device containing NiO as a high-transparent metal conductive oxide for UV detection. We demonstrated that all-transparent UV photodetectors based on $SnO_2$ could provide a definitive photocurrent density of $4nA\;cm^{-2}$ at 0 V under UV light (365 nm) and a low saturation current density of $2.02nA{\times}cm^{-2}$. The device under UV light displayed fast photoresponse with times of 31.69 ms (rise-time) and 35.12 ms (fall-time) and a remarkable photoresponse ratio of 69.37. We analyzed the optical and electrical properties of the $NiO/SnO_2$ device. We demonstrated that the excellent properties of $SnO_2$ are valuable in transparent photoelectric device applications, which can suggest various routes for improving the performance of such devices.

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.182-189
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• 2020

Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

• Design & Manufacturing
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• v.18 no.2
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• pp.57-63
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• 2024

In this study, the recyclability of commonly used PP (polypropylene) and ABS (acrylonitrile butadiene styrene) was evaluated by molding test specimens from mixture of virgin and shredded material, followed by measuring their strength properties, Experiments were conducted o two type of PP (transparent and non-transparent) and two types of ABS (white and yellow). Test specimens for each resin were prepared with shredded material ratios ranging from 10% to 50% in 10% increments. Changes in tensile strength, elastic modulus, and elastic limit were analyzed based on the mixing ratio of the shredded material. The experimental results demonstrated that the strength properties of all the resins remained consistent within a certain range, even with increasing proportions of shredded material. For transparent PP, the tensile strength ranged from 30.87± MPa, the elastic modulus from 1.23±0.04 GPa, and the elastic limit from 19.17±0.44%. Non-transparent PP exhibited a tensile strength ranging from 27.71±0.58 MPa, an elastic modulus from 1.03±0.06 GPa, and an elastic limit from 17.35±0.41%. For ABS, white ABS had a tensile strength of 39.42±0.28 MPa, an elastic modulus of 1.94±0.01 GPa, and an elastic limit of 36.76±0.25%. Yellow ABS showed a tensile strength of 39.25±0.78 MPa, an elastic modulus of 1.94±0.01 GPa, and an elastic limit of 37.14±0.23%, with values remaining consistent within this range. Based on these results, it was confirmed that the mechanical properties of the resins used in this study do not change significantly when mixed with recycled shredded material, indicating excellent mechanical recyclability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.151-151
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• 2009

Recently, there has been increasing interest in amorphous oxide semiconductors to find alternative materials for an amorphous silicon or organic semiconductor layer as a channel in thin film transistors(TFTs) for transparent electronic devices owing to their high mobility and low photo-sensitivity. The fabriction of amorphous oxide-based TFTs at room temperature on plastic substrates is a key technology to realize transparent flexible electronics. Amorphous oxides allows for controllable conductivity, which permits it to be used both as a transparent semiconductor or conductor, and so to be used both as active and source/drain layers in TFTs. One of the materials that is being responsible for this revolution in the electronics is indium-zinc-tin oxide(IZTO). Since this is relatively new material, it is important to study the properties of room-temperature deposited IZTO thin films and exploration in a possible integration of the material in flexible TFT devices. In this research, we deposited IZTO thin films on polyethylene naphthalate substrate at room temperature by using magnetron sputtering system and investigated their properties. Furthermore, we revealed the fabrication and characteristics of top-gate-type transparent TFTs with IZTO layers, seen in Fig. 1. The experimental results show that by varying the oxygen flow rate during deposition, it can be prepared the IZTO thin films of two-types; One a conductive film that exhibits a resistivity of $2\times10^{-4}$ ohm${\cdot}$cm; the other, semiconductor film with a resistivity of 9 ohm${\cdot}$cm. The TFT devices with IZTO layers are optically transparent in visible region and operate in enhancement mode. The threshold voltage, field effect mobility, on-off current ratio, and sub-threshold slope of the TFT are -0.5 V, $7.2\;cm^2/Vs$, $\sim10^7$ and 0.2 V/decade, respectively. These results will contribute to applications of select TFT to transparent flexible electronics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.17-17
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• 2009

Single-walled carbon nanotubes (SWCNTs) have attracted much attention as promising materials for transparent conducting films (TCFs), thanks to their superior electrical conductivity, high mechanical strength, and complete flexibility. The CNT-based TCFs can be used in a variety of application fields as flexible, transparent electrodes, including touch panel screens, flexible electronics, transparent heaters, etc. First of all, this study investigated the effect of a variety of surfactants on the dispersion of SWCNTs in an aqueous solution. Following the optimization of the dispersion by surfactants, flexible TCFs were fabricated by spraying the CNT suspension onto poly(ethylene terephthalate) (PET) substrates. The sheet resistances of the TCFs having different surfactants were investigated with treatment in nitric acid ($HNO_3$) whose concentration and period of treatment time were varied. It seems that the $HNO_3$ removes the surfactants from and is simultaneously doped into the SWCNT network, reducing the contact resistance between CNTs. TCFs were characterized by UV-VIS spectroscopy, thermogravimetric analyzer (TGA), scanning electron microscopy (SEM), and four-point probe.