• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.318-321
• /
• 2009

We have studied transparent top gate Al-Zn-Sn-O (AZTO) TFTs with an $Al_2O_3$ protective layer (PL) on an active layer. We also fabricated a transparent 2.5 inch QCIF+AMOLED display panel using the AZTO TFT back-plane. The AZTO active layers were deposited by RF magnetron sputtering at room temperature and the PL was deposited by ALD with two different processes. The mobility and subthreshold slope were superior in the cases of the vacuum annealing and the oxygen plasma PL compared to the $O_2$ annealing and the water vapor PL, however, the bias stability was excellent for the TFTs of the $O_2$ annealing and the water vapor PL.

• Journal of Information Display
• /
• v.10 no.4
• /
• pp.137-142
• /
• 2009

Transparent top-gate Al-Zn-Sn-O (AZTO) thin-film transistors (TFTs) with an $Al_2O_3$ protective layer (PL) on an active layer were studied, and a transparent 2.5-inch QCIF+AMOLED (active-matrix organic light-emitting diode) display panel was fabricated using an AZTO TFT backplane. The AZTO active layers were deposited via RF magnetron sputtering at room temperature, and the PL was deposited via two different atomic-layer deposition (ALD) processes. The mobility and subthreshold slope were superior in the TFTs annealed in vacuum and with oxygen plasma PLs compared to the TFTs annealed in $O_2$ and with water vapor PLs, but the bias stability of the TFTs annealed in $O_2$ and with water vapor PLs was excellent.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.382-384
• /
• 2009

In this study, high stable oxide thin-film transistors (TFTs) have been developed by using several approaching techniques, which including a change of the channel composition ratio in multi-component oxide semiconductors, a change of TFT structure with interfacial dielectric layers, a control of interface roughness, a channel-doping method, and so on.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.385-388
• /
• 2009

We have investigated the effect of the device structure on the performance of polycrystalline ZnO TFT and amorphous AZTO TFT with top gate and bottom gate structure. While the mobility of both TFTs showed relatively similar value in a top and bottom gate structure, bias stability was quite different depending on the device structure. Top gate TFT showed much less Vth shift under positive bias stress compared to that of bottom gate TFT. We attributed this different behavior to the defects formation on the gate insulator induced by energetic bombardment during the active layer deposition in a bottom gate TFT. We suggest the top gate oxide TFT would show more stable behavior under the Vgs bias.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.330-332
• /
• 2009

Highly stable bottom gate thin film transistors(TFTs) with a zinc indium tin oxide(Zn-In-Sn-O:ZITO) channel layer have been fabricated by rf-magnetron co-sputtering using a indium tin oxide(ITO:90/10), a tin oxide and a zinc oxide targets. The ZITO TFT (W/L=$40{\mu}m/20{\mu}m$) has a mobility of 24.6 $cm^2$/V.s, a subthreshold swing of 0.12V/dec., a turn-on voltage of -0.4V and an on/off ratio of >$10^9$. When gate field of $1.8{\times}10^5$ V/cm was applied with source-drain current of $3{\mu}A$ at $60^{\circ}C$, the threshold voltage shift was ~0.18 V after 135 hours. We fabricated AM-OLED driven by highly stable bottom gate Zn-In-Sn-O TFT array.

• The Journal of the Korea Contents Association
• /
• v.15 no.10
• /
• pp.10-17
• /
• 2015

Transparent LED display is providing city residents with different attractions via information services and landscape and increasing demand is detected in various areas. It is true that majority of the current demand in transparent electrode material was found and used in ITO but limitations in capacity and economic efficiency led to the need for continuous research and technology development via new materials. As a new material, metal mesh has 85% of the materials to substitute ITO and is widely used due to low-cost and high-conductive rate. Maintenance of transparent LED display utilizing metal mesh compared to existing ITO transparent display is much easier as it not only saves resources but is also economical. Thus the objective of this paper lies in proposing the utilization of metal mesh in transparent LED display prototype to enable economical use of transparent LED display technology and to expand the market and to also propose transparent LED display development method via metal mesh and manufacture a prototype based on the method. And a characteristic comparison test between ITO and metal mesh provides the possibility of using metal mesh as a transparent electrode material in transparent LED display development.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.898-901
• /
• 2006

To fabricate mono layer green sheet (MLGS) of transparent dielectric for PDP front panel, dispersion of transparent dielectric slurry and various properties of green sheets were examined as a function of amount and kinds of organic additives. Sedimentation height and viscosity of slurry were measured to determine proper types and amount of dispersant in non-aqueous system transparent dielectric slurry. Many MLGS having various ratios of the transparent dielectric glass frit, binder and plasticizer were fabricated. Finally we got the transparent dielectric layer of high transparency and free from residual pore might be remained in the gap between the electrodes.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2009.10a
• /
• pp.339-341
• /
• 2009

A transparent plasma display was developed using transparent glass barrier ribs. Glass barrier ribs were fabricated via a wet etching process. Glass barrier ribs created using a top and bottom etching process showed better transparency compared to those created through only a top etching process. A see-through phosphor layer was obtained by coating the sidewall of the barrier ribs with a conventional opaque phosphor. A fabricated prototype of a transparent plasma display was clear enough to see the background beyond the panel and was well operated by a conventional driving scheme. The maximum luminance was 1150 cd/$m^2$ and the maximum luminous efficacy was 1.35 lm/W in a Ne+13.5%Xe gas-mixture and green cells.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.973-974
• /
• 2008

Optically transparent and flexible electronic circuits and displays are attractive for next-generation visual technologies, including windshield displays, head-mounted displays, and transparent screen monitors. Here we report on the fabrication of transparent transistors and circuits based on the combination of nanoscopic dielectrics and organic, inorganic, or hybrid semiconductors. Furthermore, the first demonstration of a transparent and flexible AMOLED display driven solely by $In_2O_3$ nanowire transistors (NWTs) is reported. The display region exhibits an optical transmittance of ~35% and a green peak luminance of ${\sim}300\;cd/m^2$. These results indicate that NWT-based drive circuits are attractive for fully transparent display technologies.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2002.08a
• /
• pp.632-634
• /
• 2002

Transparent dielectric layer having color-filter function in front panel for PDP(Plasma Display Panel) was successfully fabricated and characterized. Transparent dielectric layer in front panel was made of glass based on $PbO-SiO_2-B_2O_3$ ternary system. The change of properties with content variation of oxide colorants in transparent dielectric layer having color-filter function was systematically accessed. It was demonstrated that the optimized content of oxide colorants to parent glass could greatly increase up contrast ratio and color temperature without significantly degrading luminance.