• 한국재료학회지
• /
• 제30권6호
• /
• pp.285-291
• /
• 2020

Recent advances in technology using ultra-thin noble metal film in oxide/metal/oxide structures have attracted attention because this material is a promising alternative to meet the needs of transparent conduction electrodes (TCE). AZO/Ag/AZO multilayer films are prepared by magnetron sputtering for Cu₂ZnSn(S,Se)₄ (CZTSSe) of kesterite solar cells. It is shown that the electrical and optical properties of the AZO/Ag/AZO multilayer films can be improved by the very low resistivity and surface plasmon effects due to the deposition of different thicknesses of Ag layer between oxide layers fixed at AZO 30 nm. The AZO/Ag/AZO multilayer films of Ag 15 nm show high mobility of 26.4 ㎠/Vs and low resistivity and sheet resistance of 3.58^⁎10^-5 Ωcm and 5.0 Ω/sq. Also, the AZO/Ag (15 nm)/AZO multilayer film shows relatively high transmittance of more than 65 % in the visible region. Through this, we fabricated CZTSSe thin film solar cells with 7.51 % efficiency by improving the short-circuit current density and fill factor to 27.7 mV/㎠ and 62 %, respectively.

• Journal of Information Display
• /
• 제9권3호
• /
• pp.8-11
• /
• 2008

A novel non-alkoxide sol-gel process for synthesizing Ga-doped ZnO thin film on glass was derived for possible use as a transparent electrode in flat-panel displays, using zinc acetate dehydrate as the starting material. The structural and electrical properties of thin films have been characterized as functions of Ga addition and post-heat-treatments. Their carrier density, Hall mobility, and optical transmittance were measured and discussed herein to explain the characteristics of the sol-gel-derived Ga-doped ZnO thin film on glass.

• 대한전기학회논문지
• /
• 제43권6호
• /
• pp.965-970
• /
• 1994

ZnO transparent conducting oxide thin films have been prepared by Pyrosol deposition method and the effects of the different experimental variables on the electrical resistivity and optical transmittance of the prepared films have been investigated in details. The best film with a resistivity of about 8 X 10S0-2TΩcm and transmittance about 80% has been obtained at the substrate temperature of 4$25^{\circ}C$ by using HS12T+CHS13TOH(1:3) solvent and NS12T carrier gas after annealing at 20$0^{\circ}C$ for 40 minutes in vacuum. Furthermore, We have also found the effect of substrate temperature on crystallographic orientation and surface morphology. Annealing of the as-deposited film in vacuum leads to a substantial reduction in resistivity without affecting the optical transmittance and crystallographic orientation.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2010년도 제39회 하계학술대회 초록집
• /
• pp.59-59
• /
• 2010

Graphene has attracted much interest because of its fascinating electronic structure with excellent electron mobility. However, there are some difficulties in making graphene of large and uniform area for real applications. One alternative is graphite oxide. Since graphite oxide is water soluble, it can be sprayed or spin-coating onto any substrates for applications such as Transparent Conducting Film (TCF) and Field Effect Transistor (FET). In this talk, chemical and physical properties of graphite oxide will be discussed. In addition, possible applications made of graphite oxide (GO) will be introduced.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.273.2-273.2
• /
• 2014

Sputtering process has been widely used in Si-based semiconductor industry and it is also an ideal method to deposit transparent oxide materials for thin-film transistors (TFTs). The oxide films grown at low temperature by conventional RF sputtering process are typically amorphous state with low density including a large number of defects such as dangling bonds and oxygen vacancies. Those play a crucial role in the electron conduction in transparent electrode, while those are the origin of instability of semiconducting channel in oxide TFTs due to electron trapping. Therefore, post treatments such as high temperature annealing process have been commonly progressed to obtain high reliability and good stability. In this work, the scheme of electron-assisted RF sputtering process for high quality transparent oxide films was suggested. Through the additional electron supply into the plasma during sputtering process, the working pressure could be kept below $5{\times}10-4Torr$. Therefore, both the mean free path and the mobility of sputtered atoms were increased and the well ordered and the highly dense microstructure could be obtained compared to those of conventional sputtering condition. In this work, the physical properties of transparent oxide films such as conducting indium tin oxide and semiconducting indium gallium zinc oxide films grown by electron-assisted sputtering process will be discussed in detail. Those films showed the high conductivity and the high mobility without additional post annealing process. In addition, oxide TFT characteristics based on IGZO channel and ITO electrode will be shown.

• 센서학회지
• /
• 제24권1호
• /
• pp.15-21
• /
• 2015

Transparent and conductive multilayer thin films consisting of three alternating layers FZTO/Ag/$WO_3$ have been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting oxides and the structural and optical properties of the resulting films were carefully studied. The single layer fluorine doped zinc tin oxide (FZTO) and tungsten oxide ($WO_3$) films grown at room temperature are found to have an amorphous structure. Multilayer structured electrode with a few nm Ag layer embedded in FZTO/Ag/$WO_3$ (FAW) was fabricated and showed the optical transmittance of 87.60 % in the visible range (${\lambda}=380{\sim}770nm$), quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$ and the corresponding figure of merit ($T^{10}/R_s$) is equivalent to $3.0{\times}10^{-2}{\Omega}^{-1}$. The resultant power conversion efficiency of 2.50% of the multilayer based OPV is lower than that of the reference commercial ITO. Asymmetric D/M/D multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• 한국응용과학기술학회지
• /
• 제31권4호
• /
• pp.731-739
• /
• 2014

투명 전도성 산화물로서 알루미늄과 붕소가 함께 도핑된 아연산화물(AZOB)이 $900^{\circ}C$에서 분무 열분해법에 의해 제조되었다. 얻어진 마이크론 크기의 AZOB 분말은 알루미늄, 붕소 및 아연의 수용액으로부터 얻어진다. 분무 열분해로 얻어진 마이크론 크기의 AZOB 분말은 $700^{\circ}C$에서 두 시간동안의 후 소성 과정과 24 시간 동안의 볼 밀링을 통해 나노 크기의 AZOB으로 변환된다. AZOB을 구성하는 일차 입자의 크기를 Debye-Scherrer 식에 의해 계산하였고 압축된 AZOB 펠렛의 표면 저항을 측정하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.187-187
• /
• 2015

The past thirty years have seen increasingly rapid advances in the field of Indium Tin Oxide (ITO) transparent thin film.[1] However, a major problem with this ITO thin film application is high cost compared with other transparent thin film materials.[2] So far, in order to overcome this disadvantage, we show a transparent ITO/Ag/i-ZnO multilayer thin film electrode can be the solution. In comparison with using amount of ITO as a transparent conducting material, intrinsic-Zinc-Oxide (i-ZnO) based on ITO/Ag/i-ZnO multilayer thin film showed cost-effective and it has not only highly transparent but also conductive properties. The aim of this research has therefore been to try and establish how ITO/Ag/i-ZnO multilayer thin film would be more effective than ITO thin film. Herein, we report ITO/Ag/i-ZnO multilayer thin film properties by using optical spectroscopic method and measuring sheet resistance. At a certain total thickness of thin film, sheet resistance of ITO/Ag/i-ZnO multilayer was drastically decreased than ITO layer approximately $40{\Omega}/{\square}$ at same visible light transmittance.(minimal point $5.2{\Omega}/{\square}$). Tendency, which shows lowly sheet resistive in a certain transmittance, has been observed, hence, it should be suitable for transparent electrode device.

• 한국재료학회지
• /
• 제11권1호
• /
• pp.15-19
• /
• 2001

유리기판 위에 열화학증착법으로 투명전도성 산화주석막을 제조하였다. 박막은 원료물질로 tetramethyltin(TMT), 산화제로 산소나 오존이 포함된 산소의 혼합물로부터 제조되었다 제조된 박막은 기판온도에 따라 물성이 크게 변하였고 최적화된 박막은 TMT 유랑 8 sccm, 산소유량 150 sccm, 기판온도 $380^{\circ}C$에서 제조되었다. 오존을 사용함으로서 기판온도를 약 $180^{\circ}C$정도 낮출 수 있었고 비저항은 ~$10^{ -2}{\Omega}cm$에서 ~$10^{-3}{\Omega}cm$으로 감소시킬 수 있었다.

• 반도체디스플레이기술학회지
• /
• 제6권3호
• /
• pp.35-39
• /
• 2007

ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.