• Journal of Magnetics
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• v.9 no.1
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• pp.5-8
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• 2004

For the ferromagnetic combined samples, results of x-ray diffraction patterns showed no evidence of reaction between the $La_{0.67}Ca_{0.33}MnO_3, La_{0.67}Sr_{0.33}MnO_3$ and $CoFe_2O_4$. For the amount of $CoFe_2O_4$ increased, the Curie temperature of combined samples showed no appreciable change, whereas a metal-semiconductor transition temperature rapidly decreased. For the $La_{0.67}Sr_{0.33}MnO_3$ and 20 wt % $CoFe_2O_4$ combined sample, the metal-semiconductor transition temperature was decreased to 160 K compared with the $La_{0.67}Sr_{0.33}MnO_3$ with 192 K.

• Electronics and Telecommunications Trends
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• v.27 no.5
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• pp.10-17
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• 2012

MIT(Metal-Insulator Transition) 물질은 온도와 전기장과 같은 외부자극에 의해 절연체에서 금속으로 전이할 때 전기적 저항이 급격하게 감소하는 물질을 말한다. 그 감소폭은 약 $10^4{\sim}10^5$배 정도로 이전에 볼 수 없었던 아주 큰 값이다. 또한 이러한 급격한 감소로 인하여 NDR(Negative Difference Resistance) 같은 현상이 발생하며, 외부에서 주어지는 광학적 에너지에 의하여 전이가 일어나기도 한다. 이러한 여러 현상들을 이용하여 전자소자가 개발되고 그에 따른 응용 분야도 활발하게 연구가 진행되고 있다. 이러한 시도는 MIT 물질의 단독으로 제조된 소자뿐만 아니라 기존의 전자소자와 병행하여 더욱 시너지를 발휘할 것으로 예측된다. 본고에서는 MIT 현상의 간략한 설명과 현재 기술의 발전 방향, 간단한 응용소자에 관하여 개괄적으로 기술하고자 한다.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.291.2-291.2
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• 2016

3D semiconductor material of silicon that is used throughout the semiconductor industry currently faces a physical limitation of the development of semiconductor process technology. The research into the next generation of nano-semiconductor materials such as semiconductor properties superior to replace silicon in order to overcome the physical limitations, such as the 2-dimensional graphene material in 2D transition-metal dichalcogenide (TMD) has been researched. In particular, 2D TMD doping without severely damage of crystal structure is required different conventional methods such as ion implantation in 3D semiconductor device. Here, we study a p-type doping technique on tungsten diselenide (WSe2) for p-channel 2D transistors by adjusting the concentration of hydrochloric acid through Raman spectroscopy and electrical/optical measurements. Where the performance parameters of WSe2 - based electronic device can be properly designed or optimized. (on currents increasing and threshold voltage positive shift.) We expect that our p-doping method will make it possible to successfully integrate future layered semiconductor devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.63.1-63.1
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• 2015

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.6
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• pp.444-448
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• 2010

Based on first-principles calculations, we study the magnetic properties of Co, Ni, Fe, V, and Mn impurities in ZnO. The stabilities of the ferromagnetic state and the magnetic moment of each impurity largely depend on the amount of doped electron or hole. For lightly doped n-type ZnO, it is found that the doping of Ni ions is the most effective for inducing ferromagnetism, while Fe ions show the most stable ferromagnetic couplings for heavily doped n-type samples. The characteristics of the magnetic interactions of Co ions are similar with those of Fe ions, but Co ions require much larger amount of doped electron than Fe ions to show the ferromagnetic couplings. The ferromagnetic coupling between Mn and V ions is unstable in n-type conditions.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.383-385
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• 2009

비백금계 코발트 전이금속 촉매를 탄소지지체에 담지한 뒤, 암모니아 분위기에서 $500^{\circ}C$에서 3시간 동안 열처리하는 과정을 통해 코발트 질화물 촉매를 제조했다. 제조된 촉매들의 구조와 형태를 각각 XRD, HE-TEM등을 통해 분석하였고, 전위 측정기를 이용한 CV, LSV 결과로부터 촉매의 전기화학적 산소 환원특성을 분석하여, 기존의 연료전지 양극 촉매로 사용되는 고가의 백금촉매를 대체하기 위한 비백금계로서의 가능성을 확인하였다.

• Macromolecular Research
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• v.8 no.5
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• pp.231-237
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• 2000

The polymerization of 3-ethynylphenol, phenylacetylene having hydroxy functionality, was carried out by tungsten and molybdenum-based transition metal catalysts. The polymerization proceeded to give a moderate yield of polymer. The effects on the mole ratio of monomer to catalyst (M/C), initial monomer concentration ((Mb), and the polymerization temperature for the polymerization of 3-ethynylphenol were investigated. The catalytic activity of W-based catalysts was found to be greater than that of Mo-based catalysts. The resulting polymers were brown or black powders and mostly insoluble in organic solvents. Structural analysis of the polymer by instrumental methods revealed the conjugated polymer backbone structure carrying hydroxyphenyl moieties. Thermal and morphological properties of the resulting poly(3-ethynylphenol) were also discussed.

• Journal of the Korean Magnetics Society
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• v.21 no.1
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• pp.1-4
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• 2011

We have studied magnetic structure and magnetic anisotropy energy of cubic transition metal mono-oxide cluster FeO and MnO using OpenMX method based on density functional method. The calculation results show that the antiferromagnetic spin arrangement has the lowest energy for FeO and MnO due to the superexchange interactions. The magnetic anisotropy is only found for antiferromagnetically ordered FeO cluster, since occupied electron of 3d down-spin level induces the spin-orbit couplings with <111> directed angular momentum.

• Journal of the Korean Ceramic Society
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• v.36 no.9
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• pp.930-936
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• 1999

For LiMn2O4 based spinel structures the stoichiometric reaction conditions need be considered carefully because the electrical properties depend on the structural stability. In order to obtain the homogeneous compound the Pechini process was chosen which could obtain a stoichiometry phase even low temperature and dependency of the synthetic condition on structural stability and electrochemical performance was investigated. X-ray diffraction studies showed that the compounds doped with transition metal have smaller lattice constants than those un doped. The dc conductivity was evaluated by a four probe method in the low and high temperature region respectively. The variations of basal spacings for the cathode were detected to be dependent on the extent of current flows (under dc)

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.332-342
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• 1995

The important factors of reaction conditions in sol-gel transition of silicon alkoxide solution have been reviewed and discussed on the basis of Raman study. Various factors such as type of catalyst, alkoxide, solvent, drying control chemical additive and water content affect the conversion mechanism in sol-gel process.