• Title/Summary/Keyword: transient information

검색결과 709건 처리시간 0.022초

과도 전류신호를 이용한 냉간 압연기의 판 터짐 검지 시스템 (Strip Rupture Detection System of Cold Rolling Mill using Transient Current Signal)

  • 양승욱;오준석;심민찬;김선진;양보석;이원호
    • 동력기계공학회지
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    • 제14권2호
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    • pp.40-47
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    • 2010
  • This paper proposes a fault detection system to detect the strip rupture in six-high stand Cold Rolling Mills based on transient current signal of an electrical motor. For this work, signal smoothing technique is used to highlight precise feature between normal and fault condition. Subtracting the smoothed signal from the original signal gives the residuals that contains the information related to the normal or faulty condition. Using residual signal, discrete wavelet transform is performed and acquire the signal presenting fault feature well. Also, feature extraction and classification are executed by using PCA, KPCA and SVM. The actual data is acquired from POSCO for validating the proposed method.

승강엽형 DC-DC 콘버어터의 안정도 및 과도 응답 (The Stablity and Transient Response in the Buck-Boost DC-DC Converter)

  • 김희준;김순창
    • 전자공학회논문지B
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    • 제28B권5호
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    • pp.421-430
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    • 1991
  • This paper investigated the errect of the right-half-plane zero on stability in the buck-boost DC-DC converter which is one type of the switching regulator and the stability region for the variation of the output current is obtained by evaluating the feedback gain. And it is clarified that the damping ratio decreases gradually by increase of the feedback loop gain and the regulation system of the converter becomes unstable, and from the transient response analysis we obtainedthe stability region about this converter. From above result it is known that the stability decreases by the existence of the right-half-plane zero. For the improvement of stability, we carried out one pole compensation in feedback circuit and obtained the avaliable stability region in relation to the gain bandwidth product from the stability and transient response analysis. These results were established experiment.

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Analysis of Transient Overvoltages within a 345kV Korean Thermal Plant

  • Yeo, Sang-Min;Kim, Chul-Hwan
    • Journal of Electrical Engineering and Technology
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    • 제7권3호
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    • pp.297-303
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    • 2012
  • This paper presents the simulation results for the analysis of a lightning surge, switching transients and very fast transients within a thermal plant. The modeling of gas insulated substations (GIS) makes use of electrical equivalent circuits that are composed of lumped elements and distributed parameter lines. The system model also includes some generators, transformers, and low voltage circuits such as 24V DC rectifiers and control circuits. This paper shows the simulation results, via EMTP (Electro-Magnetic Transients Program), for three overvoltage types, such as transient overvoltages, switching transients, very fast transients and a lightning surge.

The Pulsed Id-Vg methodology and Its Application to the Electron Trapping Characterization of High-κ gate Dielectrics

  • Young, Chadwin D.;Heh, Dawei;Choi, Ri-No;Lee, Byoung-Hun;Bersuker, Gennadi
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제10권2호
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    • pp.79-99
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    • 2010
  • Pulsed current-voltage (I-V) methods are introduced to evaluate the impact of fast transient charge trapping on the performance of high-k dielectric transistors. Several pulsed I-V measurement configurations and measurement requirements are critically reviewed. Properly configured pulsed I-V measurements are shown to be capable of extracting such device characteristics as trap-free mobility, trap-induced threshold voltage shift (${\Delta}V_t$), as well as effective fast transient trap density. The results demonstrate that the pulsed I-V measurements are an essential technique for evaluating high-$\kappa$ gate dielectric devices.

Study on the Thermal Transient Response of TSV Considering the Effect of Electronic-Thermal Coupling

  • Li, Chunquan;Zou, Meng-Qiang;Shang, Yuling;Zhang, Ming
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제15권3호
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    • pp.356-364
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    • 2015
  • The transmission performance of TSV considering the effect of electronic-thermal coupling is an new challenge in three dimension integrated circuit. This paper presents the thermal equivalent circuit (TEC) model of the TSV, and discussed the thermal equivalent parameters for TSV. Si layer is equivalent to transmission line according to its thermal characteristic. Thermal transient response (TTR) of TSV considering electronic-thermal coupling effects are proposed, iteration flow electronic-thermal coupling for TSV is analyzed. Furthermore, the influences of TTR are investigated with the non-coupling and considering coupling for TSV. Finally, the relationship among temperature, thickness of $SiO_2$, radius of via and frequency of excitation source are addressed, which are verified by the simulation.

HID 램프용 Two-Stage 전자식 안정기의 과도 전류 제어 (Transient Current Control of Two-Stage Electronics Ballast for HID Lamps)

  • 이우철
    • 조명전기설비학회논문지
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    • 제28권1호
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    • pp.1-8
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    • 2014
  • The conventional Three-Stage electronic ballast is stable, but Two-Stage electronic ballast has been researching because of efficiency. Three-Stage electronic ballast is consisted of PFC circuit, buck converter, and inverter circuit, but Two-stage is consisted of PFC circuit, Buck-Inverter full bridge circuit. The Buck-Inverter full bridge inverter consists of two half bridge inverters for low frequency switching, and high frequency switching. In the case of street lamp it is far from a lamp to a ballast, the conventional pulsed high voltage ignitor can not turn on the HID lamps because of reduction of ignition voltage. Therefore, it needs to do the research on a resonant ignition to turn on the HID lamps. Therefore, in the Two-Stage electronic ballast which has the resonant tank for ignition, the transient resonant current because of low frequency changing is analyzed, the novel algorithm is proposed to resuce the transient current.

Dynamic Transient Phenomena of a Proton Exchange Membrane Fuel Cell

  • Lee, Ying;Choi, Yong-Sung;Zhang, You-Sai;Lee, Kyung-Sup
    • 한국전기전자재료학회논문지
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    • 제23권7호
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    • pp.530-533
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    • 2010
  • The proton exchange membrane fuel cell (PEMFC) holds great promise of clean power. However, in practical applications which use the PEMFC as the power source, the output voltage from the fuel cell undergoes a transient response especially during acceleration and deceleration. This paper presents the relationships between the charge curves of the internal voltage rise, discharge curves of the internal voltage drop, the voltage with a time constant $V_{\tau}$ and finally, the load and time constant $\tau$ of $FC_1$ and $FC_2$, connected both in series and in parallel.

삼각함수형 RC분포회로의 과도응답해석 (Transient Response Analysis of the Trigonometric Distributed RC Circuit)

  • 김덕진
    • 대한전자공학회논문지
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    • 제4권4호
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    • pp.13-18
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    • 1967
  • 삼각함수형 선형 수동 RC분포회로의 전압전달함수의 모든 극점은 s-평면상에서 부의 실축상에 존재하므로 unit step input에 대한 과도응답은 단조한 특성을 갖는다. 이러한 특성은 집중정수회로에 적용하였던 Elmore의 상승시간 및 지연시간 계산방법을 RC분포회로에도 적용시킬 수 있는 충분한 조건이므로 본 논문에서는 삼각함수형 RC분포회로의 과도응답특성해석을 위의 방법으로 시도하였다. 그 결과 이 회로의 상승시간 및 지연시간은 시정수 및 거리각 θ의 증가와 더불어 이들 시간도 증가함을 확인하였다.

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4H-SiC DMOSFETs의 계면 전하 밀도에 따른 스위칭 특성 분석 (Effect of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs)

  • 강민석;문경숙;구상모
    • 한국전기전자재료학회논문지
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    • 제23권6호
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    • pp.436-439
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    • 2010
  • SiC power device possesses attractive features, such as high breakdown voltage, high-speed switching capability, and high temperature operation. In general, device design has a significant effect on the switching characteristics. In this work, we report the effect of the interface states ($Q_f$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized by using a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. When the $SiO_2$/SiC interface charge decreases, power losses and switching time also decrease, primarily due to the lowered channel mobilities. High density interface states can result in increased carrier trapping, or more recombination centers or scattering sites. Therefore, the quality of $SiO_2$/SiC interfaces has a important effect on both the static and transient properties of SiC MOSFET devices.

지진에 의하여 댐에 작용하는 동수압의 고전 이론에 대한 재고 (Notes on Incompressible Theory of Hydrodynamic Pressureon Dams during Earthquakes)

  • 정용권
    • 한국수자원학회논문집
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    • 제30권3호
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    • pp.195-199
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    • 1997
  • 지진 발생시 댐에 야기되는 동수압에 대하여 고전이론에서는 이를 정상상태로 취급하였는데 반하여 본 논문에서는 지진운동을 일시적인 현상으로 취급하여 비정상 선형 이론을 가지고 동수압을 검증하였다. 더욱이 지진운동은 불규칙한 수평 및 수직운동으로 구성되어있으며, 이 운동은 일시적인 현상으로 곧 사라짐으로 정상운동이 아니다. 따라서 지진운동에 의한 동수압은 비정상적으로 취급해야하며 불규칙한 지진운동을 그대로 입력하여 동수압을 구해야한다. 고전 이론에서는 지진운동을 수평적이며 단일 Sine 함수로 구성된 정상운동으로 가정하였으며 또한 물을 비압축성 물질로 가정하였으며 지진시 야기되는 수면파는 적다고 가정하여 무시하였다. 이러한 가정들을 모두 본 이론에 적용하였을 시 계산되는 동수압은 고전 이론에서 제시한 결과와 잘 일치함을 보여준다.

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