• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.1
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• pp.1-9
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• 2013

This paper proposes a ST(Switched Trans) quasi Z-source inverter using a Switched Trans Cell combing the characteristics of a Switched Inductor Cell and Trans. A DC link inductor of the conventional quasi Z-source inverter is alternated with Switched Trans Cell of the proposed ST quasi Z-source inverter. Trans Cell of the proposed method consists of one Trans and two diodes, and the proposed method has higher and more various boost function than the conventional quasi Z-source inverter by simply changing the turns ratio of primary and secondary of the Trans. The validity of the proposed ST Z-source inverter was confirmed by PSIM simulation and a DSP based experiment under the input voltage 48V and output phase voltage 30V. As a result, when compared with the traditional quasi Z-source inverter, the proposed method has the advantage of the low voltage stress under the same output voltage condition of the voltage.

• The Transactions of the Korean Institute of Power Electronics
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• v.18 no.2
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• pp.123-130
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• 2013

This paper proposes the switched trans Z-source inverter(STZSI) which combined the characteristics of the trans Z-source inverter(TZSI) and the switched inductor Z-source inverter(SLZSI). The proposed STZSI has the same performance compared with the SLZSI which is improved the voltage boost performance of the conventional typical X-shaped ZSI, and it has advantage that circuit structure of Z-impedance network is more simple. And, in order to step up the voltage boost factor under the condition of the same duty ratio, unlike the SLZSI adding the inductors and diodes, the proposed method is dune by changing the turn ratio of trans primary winding of Z-impedance network. To confirm the validity of the proposed method, PSIM simulation and a DSP(TMS320F28335) based experiment were performed using trans with turn ratio 1 and 2 under the condition of the input DC voltage VI=50V, duty ratio D=0.1 and D=0.15. As a result, under the same input/ouput condition, the inverter arm voltage stress of the proposed method is reduced to about 15%-22% as compared with typical X-shaped ZSI, and the elements in Z-impedance network of the proposed method is reduced as compared with the SLZSI.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.61 no.10
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• pp.1432-1441
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• 2012

In this study, an improved LCCT(Inductor-Capacitor-Capacitor-Trans) Z-source inverter(Improved LCCT ZSI) with characteristics of Quasi Z-source inverter(QZSI) and LCCT Z-source inverter(LCCT ZSI) is proposed. The proposed inverter can also reduce the voltage stress and input current/capacitor voltage ripples compared with conventional LCCT ZSI and Quasi ZSI. A two winding trans in Z-impedance network of the conventional LCCT ZSI is replaced by a three winding trans in the proposed inverter. To verify the validity of the proposed inverter, a DSP controlled hardware was made and PSIM simulation was executed for each method. Comparing the current and voltage ripples of each method under the condition of input DC voltage 70[V] and output AC voltage 76[Vrms], the input current and capacitor voltage ripple factors of the proposed inverter were low as 11[%] and 1.4[%] respectively. And, for generation of the same output AC voltage of each method, voltage stress of the proposed inverter was low as 175[V] under the condition of duty ratio D=0.15. As mentioned above, we could know that the proposed inverter have the characteristics of low voltage stress, low ripple factor and low operation duty ratio compared with the conventional methods. Finally, the efficiency according to load change/duty ratio and the transient state characteristics were discussed.