• Journal of Mechanical Science and Technology
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• v.18 no.8
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• pp.1327-1337
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• 2004

An efficient multi-objective optimization method is presented making use of neural network and a systematic satisficing trade-off method (STOM), in order to simultaneously improve both maneuverability and durability of tire. Objective functions are defined as follows: the sidewall-carcass tension distribution for the former performance while the belt-edge strain energy density for the latter. A back-propagation neural network model approximates the objective functions to reduce the total CPU time required for the sensitivity analysis using finite difference scheme. The satisficing trade-off process between the objective functions showing the remarkably conflicting trends each other is systematically carried out according to our aspiration-level adjustment procedure. The optimization procedure presented is illustrated through the optimum design simulation of a representative automobile tire. The assessment of its numerical merit as well as the optimization results is also presented.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.8 no.1
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• pp.60-66
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• 1999

This study is to develop design sensitivity analysis method based on continuum theory for the actual buckling load of vehicle passenger compartment with respect to sizing design variables. For nonlinear structural analysis, both geometric and material nonlinear effects are considered. The total Lagrangian formulation for incremental equilibrium analysis and one-point linear eigenvalue problem for buckling analysis are utilized. Numerical methods are presented to evaluate design sensitivity expressions, using structural analysis results from FEM code. Optical design of vehicle passenger compartment with buckling constraint solved using Gradient projection method.

• Journal of the Korean GEO-environmental Society
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• v.13 no.1
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• pp.21-29
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• 2012

Ground failure by liquefaction can occur not only during shaking but also as the result of the post-liquefaction process after an earthquake. During the process of ground deformation and failure, excess pore water pressure in soil is redistributed, which can then lead to changes in the effective stress of soils. Therefore, in order to provide a further understanding of the phenomenon, we have to estimate the properties of effective stress during the recompression process in post-liquefaction as well, not only the total amount of pore water drained. The primary objectives of this study are to determine and compare the recompression properties in the post-liquefaction process in terms of the relationship between volumetric strains and mean effective stresses under the various conditions of relative density and shear stress history. In all experimental cases, the volumetric strains increase greatly in the low effective stress level, almost to the zero zone, and granite soil, which has fine grains, undergoes gradual changes in the relationship between volumetric strains and mean effective stresses compared with fine sand. And, we can also find that recompression properties in the post-liquefaction process by cyclic loading depend highly on the dissipation energy and maximum shear strain, and this fact can be obtained in all cases regardless of the existence of fine content, relative density, and loading history. Especially, granite soil having fine grains can be defined uniformly in the relationship between dissipation energy and maximum volumetric strain, while fine sand cannot be so uniformly defined.

• Economic and Environmental Geology
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• v.53 no.3
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• pp.271-285
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• 2020

In this study, a numerical experiment related to the stress-strain analysis was performed on 3-D discrete fracture network(DFN) systems based on the distinct element method to evaluate the effect of joint geometry on deformability of jointed rock masses. Using one or two joint sets with deterministic orientation, a total of 12 3-D DFN blocks having 10m cube domain were generated with different joint density and size distribution. Directional deformation modulus of the DFN cube blocks were estimated along the axis directions of 3-D cartesian coordinate. In addition, deviatoric stress directions were chosen at every 30° of trend and plunge in 3-D for some DFN blocks to examine the variability of directional deformation modulus with respect to joint geometry. The directional deformation modulus of the DFN block were found to reduce with the increase of joint size distribution. The increase in joint density was less likely to have a significant effect on directional deformation modulus of the DFN block in case of the effect of rock bridges was relatively large because of short joint size distribution. It, however, was evaluated that the longer the joint size, the increase in the joint density had a more significant effect on the anisotropic deformation modulus of the DFN block. The variation of the anisotropic deformation modulus according to the variations in joint density and size distribution was highly dependent on the number of joint sets and their orientation in the DFN block. Finally, this study addressed a numerical procedure for stress-strain analysis of jointed rock masses considering joint geometry and discussed a methodology for practical application at the field scale.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.298-298
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• 2013

Finding renewable and clean energy resources is essential research to solve global warming and depletion of fossil fuels in modern society. Recently, complex harvesting of energy from multiple sources is available in our living environments using a single device has become highly desirable, representing a new trend in energy technologies. We report that when simultaneously driving the fusion and composite cells of two or more types, it is possible to make an affect the other cells to obtain a greater synergistic effect. To understand the coupling effect of photovoltaic and piezoelectric device, we fabricate the serially integrated hybrid cell (s-HC) based on organic solar cell (OSC) and piezoelectric nanogenerator (PNG). The size of increased voltage peaks when OSC and PNG are working on is larger than the case when only PNG is working. This voltage difference is the Voc change of OSC, not the voltage change of PNG and current density difference between these two cases is manifested more clearly. When the OSC and PNG are working in s-HC at the same time, piezoelectric potential (VPNG) is generated in ZnO and theoretical total voltage is sum of voltage of an OSC (VOSC) and VPNG. However, electrons from OSC are influenced by piezoelectric potential in ZnO and current loss of OSC in whole circuit decreases. As a result, VOSC increases temporarily. Current shows the similar behavior. PNG acts a resistance in the whole circuit and current loss occurs when the electrons from OSC pass through the PNG. But piezoelectric potential recover current loss and decrease the resistance of PNG. Our PNG can maintain piezoelectric potential when the strain is held owing to the LDH layer while general PNG cannot maintain piezoelectric potential. During the section that strain is held, voltage enhancement effect is maintained and same effect appeared even turn off the light. Actually at this time, electrons in ZnO nanosheets move to LDH and trapped by the positive charges in this layer. After this strain is held, piezoelectric potential of ZnO nanosheets is disappeared but potential difference which is developed by negative charge dominant LDH layer is remained. This potential acts similar role like piezoelectric potential in ZnO. Electrons from the OSC also are influenced by this potential and the more current flows.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.6
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• pp.263-268
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• 2017

A hot forming process is required for Mg alloys to enhance the formability and plastic workability due to the insufficient formability at room temperature. Mg alloy undergoes dynamic recrystallization (DRX) during the hot working process, which is a restoration or softening mechanism that reduces the dislocation density and releases the accumulated energy to facilitate plastic deformation. The flow stress curve shows three stages of complicated strain hardening and softening phenomena. As the strain increases, the stress also increases due to work hardening, and it abruptly decreases work softening by dynamic recrystallization. It then maintains a steady-state region due to the equilibrium between the work hardening and softening. In this paper, an efficient optimization process is proposed for the material model of the dynamic recrystallization to improve the accuracy of the flow curve. A total of 18 variables of the constitutive equation of AZ80 alloy were systematically optimized at an elevated forming temperature($300^{\circ}C$) with various strain rates(0.001, 0.1, 1, 10/sec). The proposed method was validated by applying it to the constitutive equation of AZ61 alloy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of the Korean Magnetics Society
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• v.26 no.2
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• pp.39-44
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• 2016

Determination of the structural, electronic, and magnetic properties of the magnetically doped bismuth-telluride alloys are drawing lots of interest in the fields of the thermoelectric application as well as the research on magnetic interaction and topological insulator. In this study, we performed the first-principles electronic structure calculations within the density functional theory for the Gd doped bismuth-tellurides in order to study its magnetic properties and magnetic phase stability. All-electron FLAPW (full-potential linearized augmented plane-wave) method is employed and the exchange correlation potentials of electrons are treated within the generalized gradient approximation. In order to describe the localized f-electrons of Gd properly, the Hubbard +U term and the spin-orbit coupling of the valence electrons are included in the second variational way. The results show that while the Gd bulk prefers a ferromagnetic phase, the total energy differences between the ferromagnetic and the antiferromagnetic phases of the Gd doped bismuth-telluride alloys are about ~1meV/Gd, indicating that the stable magnetic phase may be changed sensitively depending on the structural change such as defects or strains.