• Korean Chemical Engineering Research
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• v.44 no.2
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• pp.179-186
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• 2006

Two types of $TiO_2$, nanotube and nanoparticle, were used for the mesoporous coatings by doctor blade technique followed by calcining at $450^{\circ}C$. The coatings were used as working materials for dye-sensitized solar cells (DSCs) later on and their photovoltaic characterization was carried out. The nanoparticle was synthesized from hydrogen titanate nanotube by hydrothermal treatment at $180^{\circ}C$ for 24 hr. The solar energy conversion efficiency (${\eta}$) of DSCs prepared by this nanoparticle reached 8.07％ with $V_{OC}$ (open-circuit potential) of 0.81 V, $I_{SC}$ (short-circuit current) of $18.29mV/cm^2$, and FF (fill factor) of 66.95％, respectively. For the preparation of nanotube, the concentration of NaOH solution varied from 3 M to 5 M. In the case of DSCs fabricated with nanotubes from 3 M NaOH solution, the ${\eta}$ reached 6.19％ with $V_{OC}$ of 0.77 V, $I_{SC}$ of $12.41mV/cm^2$, and FF of 64.49％, respectively. On the other hand, in the case of 5 M solution, the photovoltaic ${\eta}$ was decreased with 4.09％ due to a loss of photocarriers. In conclusion, it is demonstrated that the solar energy conversion efficiency of DSCs made from $TiO_2$ nanoparticle showed best results among those under investigation.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.754-762
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• 1995

Strontium titanate(SrTiO$_3$) thin film was prepared on Si substrates by RF magnetron sputtering for a high capacitance density required for the next generation of LSTs. The optimum deposition conditions for SrTiO$_3$thin film were investigated by controlling the deposition parameters. The crystallinity of films and the interface reactions between SrTO$_3$film and Si substrate were characterized by XRD and AES respectively. High quality films were obtained by using the mixed gas of Ar and $O_2$for sputtering. The films were deposited at various bias voltages to obtain the optimum conditions for a high quality file. The best crystallinity was obtained at film thickness of 300nm with the sputtering gas of Ar+20% $O_2$and the bias voltage of 100V. The barrier layer of Pt(100nm)/Ti(50nm) was very effective in avoiding the formation of SiO$_2$layer at the interface between SrTiO$_3$film and Si substrate. The capacitor with Au/SrTiO$_3$/Pt/Ti/SiO$_2$/Si structure was prepared to measure the electric and the dielectric properties. The highest capacitance and the lowest leakage current density were obtained by annealing at $600^{\circ}C$ for 2hrs. The typical specific capacitance was 6.4fF/$\textrm{cm}^2$, the relative dielectric constant was 217, and the leakage current density was about 2.0$\times$10$^{-8}$ A/$\textrm{cm}^2$ at the SrTiO$_3$film with the thickness of 300nm.