• 제목/요약/키워드: tin oxide film

검색결과 599건 처리시간 0.034초

ITO 나노입자 면상발열체의 온도유지에 대한 연구 (Temperature Maintenance of an ITO Nanoparticle Film Heater)

  • 양경환;조경아;임기주;김상식
    • 전기전자학회논문지
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    • 제20권2호
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    • pp.171-173
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    • 2016
  • 본 연구에서는 휴대용 온열기의 에너지 효율을 향상시키기 위하여 indium tin oxide (ITO) 나노입자 페이스트와 PDMS를 이용하여 PDMS/ITO 나노입자 박막 면상발열체를 제작하였고, ITO 나노입자 박막 면상발열체와 PDMS/ITO 나노입자 면상발열체의 온도 유지특성 및 소비전력량을 분석하였다. PDMS층의 낮은 열전도도로 PDMS/ITO 나노입자 박막 면상발열체의 온도유지시간이 ITO 나노입자 박막 면상발열체에 비해 1.5배 증가하였으며, 소비 전력량은 35% 절감되었다.

Thermopile과 삽입된 $SnO_2$ catalyst를 이용한 NOx 센서 (A NOx gas sensor based on thennopile and embedded tin oxide catalyst)

  • 이충일;윤승일;김용준
    • 대한기계학회:학술대회논문집
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    • 대한기계학회 2008년도 추계학술대회A
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    • pp.1829-1832
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    • 2008
  • This paper reports a novel gas sensing method by using a thermoelectric device, thermopile in this case, with an embedded tin oxide catalyst. By using a thin catalyst film, the response time and recovery time were remarkably improved. The fabricated gas sensor was characterized through detecting NOx gas with various concentrations.

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PAD법으로 제작된 산화코발트-산화주석 복합체의 가스 감응 특성 (Cobalt Oxide-Tin Oxide Composite: Polymer-Assisted Deposition and Gas Sensing Properties)

  • 안세용;이위;장동미;정혁;김도진
    • 한국재료학회지
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    • 제20권11호
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    • pp.611-616
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    • 2010
  • A cobalt oxide - tin oxide nanocomposite based gas sensor on an $SiO_2$ substrate was fabricated. Granular thin film of tin oxide was formed by a rheotaxial growth and thermal oxidation method using dc magnetron sputtering of Sn. Nano particles of cobalt oxide were spin-coated on the tin oxide. The cobalt oxide nanoparticles were synthesized by polymer-assisted deposition method, which is a simple cost-effective versatile synthesis method for various metal oxides. The thickness of the film can be controlled over a wide range of thicknesses. The composite structures thus formed were characterized in terms of morphology and gas sensing properties for reduction gas of $H_2$. The composites showed a highest response of 240% at $250^{\circ}C$ upon exposure to 4% $H_2$. This response is higher than those observed in pure $SnO_2$ (90%) and $Co_3O_4$ (70%) thin films. The improved response with the composite structure may be related to the additional formation of electrically active defects at the interfaces. The composite sensor shows a very fast response and good reproducibility.

스퍼터 증착된 Zinc Tin Oxide 박막 트랜지스터의 공정 압력에 따른 특성 연구 (The Properties of RF Sputtered Zinc Tin Oxide Thin Film Transistors at Different Sputtering Pressure)

  • 이홍우;양봉섭;오승하;김윤장;김형준
    • 반도체디스플레이기술학회지
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    • 제13권1호
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    • pp.43-49
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    • 2014
  • Zinc-tin oxides (ZTO) thin film transistors have been fabricated at different process pressure via re sputtering technique. TFT properties were improved by depositing channel layers at lower pressure. From the analysis of TFTs comprised of multi layer channel, deposited consecutively at different sputtering pressure, it was suggested that the electrical characteristics of TFTs were mainly affected by interfacial layer due to their high conductance, however, the stability under the NBIS condition was influenced by whole bulk layer due to low concentration of positive charges, which might be generated by the oxygen vacancy transition, from Vo0 to $Vo^{2+}$. Those improvements were attributed to increasing sputtered target atoms and decreasing harmful effects of oxygen molecules by adopting low sputtering pressure condition.

Deposition of Indium Tin Oxide films on Polycarbonate substrates by Ion-Assisted deposition (IAD)

  • Cho, Jn-sik;Han, Young-Gun;Park, Sung-Chang;Yoon, Ki-Hyun;Koh, Seok-Keun
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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    • pp.98-98
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    • 1999
  • Highly transparent and conducting tin-doped indium oxide (ITO) films were deposited on polycarbonate substrate by ion-assited deposition. Low substrate temperature (<10$0^{\circ}C$) was maintained during deposition to prevent the polycarbonate substrate from be deformed. The influence of ion beam energy, ion current density, and tin doping, on the structural, electrical and optical properties of deposited films was investigated. Indium oxide and tin-doped indium oxide (9 wt% SnO2) sources were evaporated with assisting ionized oxygen in high vacuum chamber at a pressure of 2$\times$10-5 torr and deposition temperature was varied from room temperature to 10$0^{\circ}C$. Oxygen gas was ionized and accelerated by cold hallow-cathode type ion gun at oxygen flow rate of 1 sccm(ml/min). Ion bea potential and ion current of oxygen ions was changed from 0 to 700 V and from 0.54 to 1.62 $\mu$A. The change of microstructure of deposited films was examined by XRD and SEM. The electrical resistivity and optical transmittance were measured by four-point porbe and conventional spectrophotometer. From the results of spectrophotometer, both the refractive index and the extinction coefficient were derived.

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투명접합을 이용한 이종 태양전지 (Transparent conductive oxide layers-embedding heterojunction Si solar cells)

  • 윤주형;김민건;박윤창;;김준동
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2011년도 추계학술대회 초록집
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    • pp.47.2-47.2
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    • 2011
  • High-efficient transparent conductive oxide (TCO) film-embedding Si heterojunction solar cells were fabricated. An improved crystalline indium-tin-oxide (ITO) film was grown on an Al-doped ZnO (AZO) template upon hetero-epitaxial growth. This double TCO-layered Si solar cell provided significantly enhanced efficiency of 9.23 % as compared to the single TCO/Si devices. The effective arrangement of TCO films (ITO/AZO) provides a good interface, resulting in the enhanced photovoltaic performances. It discusses TCO film arrangement scheme for efficient TCO-layered heterojunction solar cells.

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투명전도성 Tin Oxide Film의 특성 (Characteristics of Transparent and Conducting Tin Oxide Film)

  • 지창섭;문탁진;최인훈;이덕열
    • 대한화학회지
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    • 제31권1호
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    • pp.102-109
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    • 1987
  • 화학증착방법에 의해 dibutyl tin diacetate를 산소와 반응시켜 $SnO_2$박막을 slide glass에 증착시켜 각 조건에 형성된 $SnO_2$박막의 특성을 조사하였다. 본 연구에서 최적증착조건은 기판온도 420$^{\circ}C$, 증착시간 20분으로 나타났으며 증착속도는 증착시간이 증가함에 따라 증가하며 증착시간 25분이후에는 일정해졌으며 판저항의 값도 증착초기에는 감소하나 증착시간 20분이 지나면서 증가하였다. 증착온도 420$^{\circ}C$, 증착시간 20분에 형성된 박막은 두께 4000${\AA}$이며 가시광선 투과율이 90%이며 5800 ohms/${\square}$의 판저항을 가졌다. 그리고 산세척방법에 의해 표면처리한 기판과 반응기체중 수증기의 첨가는 더 좋은 특성의 투명전도성 $SnO_2$박막을 제조하는데 도움이됨을 알았다. 또한 증착막은 작은 구형의 입자들로 이루어져 있다는 것을 주사전자현미경으로 확인하였으며 X-선 회절 실험에 의해 rutile structure(tetragonal)를 갖는다는 것을 알 수 있었다.

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Prussian blue가 전착된 indium tin oxide 전극을 이용한 전기화학적 검출기 (An Electrochemical Detector Using Prussian Blue Electrodeposited Indium Tin Oxide Electrode)

  • 이인제;김주호;강치중;김용상
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권10호
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    • pp.449-452
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    • 2005
  • We fabricated an electrochemical detector (ECD) to catalyze redox reaction efficiently by electrodepositing Prussian blue (PB) on the indium tin oxide (ITO) electrode. Capillary electrophoresis (CE) and amperometric method were used. We investigated the PB surface properties by topography from atomic force microscopy (AFM). Also PB film thickness calibration with respect to deposition time and voltage was used to get better PB surFace. The PB thin film of dense and smooth surface could catalyze redox reaction efficiently. Comparing with CE-ECD microchip using bare-lTO electrode, proposed CE-ECD microchip using PB deposited electrode has shown better sensitivity by determining the detected peak current from the electropherograms while the concentration of tested analyzes was maintained the same. It is verified that detection limit can be lowered for 0.01 mM of dopamine and catechol respectively.