• Journal of Korean Vacuum Science & Technology
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• v.4 no.1
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• pp.23-26
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• 2000

We have fabricated by metal organic chemical vapor deposition (MOCVD) In$\_$0.13/Ga$\_$0.87/N/GaN multiple quantum well (MQW) with thickness as thin as 10 A and barriers also of th same width on (0001) sapphire substrate. We have investigated this thin MQW by steady-state and time-resolved photoluminescence(PL) in picosecond time scale in a wide temperature range from 10 to 290 K. In the PL at 10 K, we observed a broad peak at 3.134 eV which was attributed to the quantum well emission of InGaN. The full width at half maximum (FWHM) of this peak was 129 meV at 10 K and its broadening at low temperatures was considered to be due to compositional fluctuations and interfacial disorder in the alloy. The narrow width of the quantum well was mainly responsible for the broadening of the emission linewidth. We also observed an intense and sharp peak at 3.471 eV of GaN barrier. From the temperature dependent PL measurements, the activation energy of the InGaN quantum well emision peak was estimated to be 69 meV. The lifetime of the quantum well emission was found to be 720 ps at 10 K, which was explained in terms of the exciton localization arising from potential fluctuations.

• Journal of Korean Ophthalmic Optics Society
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• v.3 no.1
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• pp.27-31
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• 1998

We investigated visible light radiated from Plasma focus device by time-resolved analyzed method and time-integrated analyzed method. Plasma focus consisted of two coaxial electrodes is a device that translated from electric energy of maximum 40 kV/20 kJ in capacitor banks into visible light by electric discharge. Spectral analysis is using Monochromator(f =0.5m). Time-resolved spectrum is analyzed with a oscilloscope the light pulse of constant wavelength and time-integrated spectrum does with densitometer the film which developed a constant range of wavelength. The optimum condition of visible emission was that the discharging voltage was 17kV and the gas pressure 0.5 torr Ar.

• Applied Science and Convergence Technology
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• v.27 no.3
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• pp.56-60
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• 2018

The optical properties of the digital-alloy $(In_{0.53}Ga_{0.47}As)_{1-z}/(In_{0.52}Al_{0.48}As)_z$ grown by molecular beam epitaxy as a function of composition z (z = 0.4, 0.6, and 0.8) have been studied using temperature-dependent photoluminescence (PL) and time-resolved PL (TRPL) spectroscopy. As the composition z increases from 0.4 to 0.8, the PL peak energy of the digital-alloy $In(Ga_{1-z}Al_z)As$ is blueshifted, which is explained by the enhanced quantization energy due to the reduced well width. The decrease in the PL intensity and the broaden FWHM with increasing z are interpreted as being due to the increased Al contents in the digital-alloy $In(Ga_{1-z}Al_z)As$ because of the intermixing of Ga and Al in interface of InGaAs well and InAlAs barrier. The PL decay time at 10 K decreases with increasing z, which can be explained by the easier carrier escape from InGaAs wells due to the enhanced quantized energies because of the decreased InGaAs well width as z increases. The emission energy and luminescence properties of the digitalalloy $(InGaAs)_{1-z}/(InAlAs)_z$ can be controlled by adjusting composition z.

• Analytical Science and Technology
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• v.17 no.5
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• pp.416-422
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• 2004

Time-resolved laser induced breakdown spectroscopy (TRELIBS) has been developed and applied to the qualitative analysis of the component materials of nuclear power plant. The alloy samples used in this work were carbon steels (A106 Gr. B; A336 P11; A335 P22), stainless steels (type 304; type 316) and inconel alloys (Inconel 600; Inconel 690; Inconel 800). Carbon steels can be individually distinguished by the intensity ratio of chromium to iron and molybdenum to iron emission lines observed at the wavelength raging from 485 to 575 nm. Type 316 stainless steel can be easily differentiated from type 304 by identification of the molybdenum emission lines at an emission wavelength ranging from 485 to 575 nm: type 304 does not give any molybdenum emission lines, but type 316 does. The inconel alloys can be individually distinguished by the intensity ratio of Cr/Fe and Ni/Fe emission lines at the wavelength raging from 420 to 510 nm. TRELIBS has been proved to be a powerful analytical technique for direct analysis of alloys due to its non-destructivity and simplicity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.22-22
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• 2003

Studies on the optical properties related to the built-in internal field and the carrier localization present in various GaN-based structures are essential not only for the physical interest but in designing practical visible and ultraviolet light emitting device applications with better performance and quantum efficiency. We report on the optical characteristics of various dimensional GaN-based structures such as (i) GaN self-assembled quantum dots grown in Stranski-Krastanov mode (OD), vertically-aligned GaN nanorods (1D), graded-In-content InGaN quantum wells (2D), laterally-overgrown GaN pyramids (3D), and GaN epilayers grown on various substrates. We used a wide variety of optical techniques, such as photoluminescence (PL), PL excitation, micro-PL, cathodoluminescence, optically-pumped stimulated emission, and time-resolved PL spectroscopy. An overview and comparison of the optical characteristics of the above GaN-based structures will be given.

• Journal of Photoscience
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• v.1 no.1
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• pp.15-23
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• 1994

The absorption and fluorescence spectral properties of piroxicam (PRX) in the hydrogenbonding solvents show the most sensitive dependence on the concentration ranging from 8 x 10$^{_5}$ to 2 x10$^{_5}$ M. These are attributed to both the solvent-mediated ground-state intermolecular proton transfer (GSIerPT) leading to formation of the ground state anion and the excited-state intmmolecular proton transfer (ESIraPT). The concentration dependences of the time-resolved emission kinetics at both room temperature and 77 K have also been investigated. It is shown that in the excited state, the ESIraPT of PRX is the dominant process to form a keto tautomer at the high concentration, whereas at the low concentration the excited-state conformational change of the anion is an additional process leading to formation of a zwitterion. The ESI~PT of PRX in the hydrogenbonding solvent is coupled with the ultrafast excited-state solvent reorganization.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.48 no.6
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• pp.479-487
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• 2020

A new double-pulse laser system that combines Raman and laser induced plasma spectroscopy (LIPS) in a single unit is proposed. The study attempts to enhance the laser induced plasma signals while simultaneously extracting the desired molecular signals from Raman spectroscopy. In low pressure conditions such as the lunar atmosphere, the measuring of plasma emission is hard because of the low electron density and short persistence time causing a rapid plasma expansion. Furthermore, in the integration of the detecting system aimed at space exploration, the minimization of laser system is important in terms of the payload mass. Simultaneous molecular and atomic detection that gave highly resolved spectral data at pressure below 0.07 torr is demonstrated amongst eight rock samples test. The plasma stacking produced from the double-pulse laser enhanced the signal intensity of calcium and oxygen lines in calcite matrix by twofold, compared to a conventional LIPS.

• Publications of The Korean Astronomical Society
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• v.27 no.4
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• pp.261-262
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• 2012

The aim of this research is to reveal the spatial distribution of the star formation activity of nearby galaxies by comparing CO molecular emission lines with the large area observation in far-infrared (FIR) lines. We report the imaging observations of NGC 253 by FIR forbidden lines via FIS-FTS and CO molecular lines from low to high excitation levels with ASTE, which are good tracers of star forming regions or photo-dissociation regions, especially spiral galaxies, in order to derive the information of the physical conditions of the ambient interstellar radiation fields. The combination of spatially resolved FIR and sub-mm data leads to the star formation efficiency within galaxy. The ratio between the FIR luminosity and molecular gas mass, $L_{FIR}/M_{H_2}$, is expected to be proportional to the number of stars formed in the galaxy per unit molecular gas mass and time. Moreover the FIR line ux shows current star formation activity directly. Furthermore these can be systematic and statistical data for star formation history and evolution of spiral galaxies.

• Macromolecular Research
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• v.12 no.3
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• pp.322-324
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• 2004

Poly(1-dodecyl-2,5-pyrrylene vinylene) (PDPV) has an extended 1t-conjugated structure and exhibits characteristic spectroscopic features. The PDPV we prepared has an absorption maximum at 510nm and its long absorption tail at ca. 750nm in methylene chloride is due to the long 1t-conjugated system connected to vinyl group. The large red-shift of emission was 625nm upon excitation at 480nm, which suggests the existence of a low emissive state. The emission of PDPV in less-polar solvents decreased markedly relative to that in the more-polar solvents; this observation was ascribed possibly to quenching by a strong vibrational mode of the dodecyl groups of PDPV in less-polar solvents. Furthermore, the emission from the high-energy side had a single decay component (0.1㎱, 49.96%), while that from the low-energy side had two components (0.6㎱, 27.1 %; 2.7㎱, 22.87%). We characterized the redox properties of PDPV by cyclic voltammetry. Every redox peak showed irreversible behavior; the oxidation peaks appeared at 1.7,0.8, and 0.6V and the reduction peak at -0.5V.

• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.474-480
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• 2009

We have investigated optical properties of InAs quantum dots (QDs) grown on GaAs (100) substrate by molecular beam epitaxy, by means of photoluminescence (PL) and time-resolved PL spectroscopy. InAs QDs were grown by using In interruption growth technique, in which the In flux was periodically interrupted by a closed In shutter during InAs QDs growth. The shutter of In source was opened for 1 s and then closed for 0, 9, 19, 29, or 39 s. This growth sequence was repeated 30 times during QDs growth. For each sample, the total amount of In contributing to the growth was the same (30 s) but total growth time was varied during the InAs growth. As the In interruption time is increased from 0 to 19 s, the PL peak position of the QDs is red-shifted from 1096 to 1198 nm, and the PL intensity is increased. However, the PL peak is unchanged and the intensity is decreased as the In interruption time is increased further to 39 s. The PL decay times measured at the PL peak position for all the InAs QDs are independent on the QD growth conditions and showed about 1 ns. The red-shift of PL peak and the increase of PL intensity can be explained due to increased QD size and the enhancement in the migration of In atoms using In interruption technique. These results indicated that the size and shape of InAs QDs can be controlled by using In interruption growth technique. Thus the emission wavelength of the InAs QDs on GaAs substrate can also be controlled.