• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.4C
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• pp.230-238
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• 2005

An orthogonal frequency division multiplexing (OFDM) system consists of a number of independently modulated subcarriers and, thus, a high peak-to-average power ratio (PAR) can occur when the subcarriers are added coherently. The high PAR brings such disadvantages as an increased complexity of the analog-to-digital (ADC) and digital-to-analog (DAC) converters and a reduced efficiency of the radio frequency (RF) power amplifier. In this paper, we propose a novel PAR reduction scheme called selective mapping of partial tones (SMOPT). The SMOPT scheme has a reduced complexity, lower sensitivity to peak reduction tones (PRT) positions, and a shorter processing time as compared with the conventional tone reservation (TR) scheme. The performance of the SMOPT scheme is analyzed based on the IEEE 802.1la wireless local area network(WLAM) physical layer model. Numerical results show that the SMOPT scheme outperforms the TR scheme under various scenarios.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.9
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• pp.1858-1864
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• 2009

In this paper, we design a non-volatile memory IP, 1-kb one-time programmable (OTP) memory, used for power management ICs. Since a conventional OTP cell uses an isolated NMOS transistor as an antifuse, there is an advantage of it big cell size with the BCD process. We use, therefore, a PMOS transistor as an antifuse in lieu of the isolated NMOS transistor and minimize the cell size by optimizing the size of a OTP cell transistor. And we add an ESD protection circuit to the OTP core circuit to prevent an arbitrary cell from being programmed by a high voltage between the terminals of the PMOS antifuse when the ESD test is done. Furthermore, we propose a method of turning on a PMOS pull-up transistor of high impedance to eliminate a gate coupling noise in reading a non-programmed cell. The layout size of the designed 1-kb PMOS-type antifuse OTP IP with Dongbu's $0.18{\mu}m$ BCD is $129.93{\times}452.26{\mu}m^2$.

• Journal of Digital Contents Society
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• v.19 no.4
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• pp.615-620
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• 2018

Evaluation of clinical usefulness of current perception threshold test and vibration sense perception threshold test in diagnosing the diabetic poly-neuropathy patients is one of the diagnosis methods for diabetic poly-neuropathy. Up to the present, some diagnostic methods were used for diabetic poly neuropathy patients. For example, there are neuropathy impairment score test of lower limbs, nerve conduction test, cooling detection threshold test, heat-pain threshold test and so on. However, most of the above tests require very expensive cost and take a lot of time in test. In this paper, a new apparatus estimating vibration sense ability is introduced. For this purpose, the VCM(voice coil motor) stimulating patient's peripheral nerve and current amplifier were manufactured. Also, softwares sensing and driving the vibration detection threshold test in order to measure the quantitative vibration sensory levels in diabetic poly-neuropathy patients were developed.

• Korean Journal of Applied Biomechanics
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• v.18 no.1
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• pp.39-43
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• 2008

The purpose of this study was to develop EOG system for collecting eye movement patterns to investigate visual function and position and the level of balancing. This small and partable wireless EOG system was enabled to collect stable signals without hindering any kind of sports movement. This system was consist of four parts: amplifier, main process with wireless transmitter, receiver, and display. Three EOG electrodes were used and placed on right(+), left(-) sides of eyes, and between eyes as a reference. This system was possible to measure signals for relatively long duration but the degeneration of electrodes may magnify measurement errors when collecting time was getting longer. Thus, dry electrodes may be applied to the system when long term measurement is needed for future studies.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.9
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• pp.13-20
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• 1999

A 2-stage MMIC(monolithic Microwave Integrated Circuits) LNA(Low Noise Amplifiers) at 30GHz hand has been designed and fabricated for the Ka-band Satellite Communications. The $0.15 {\mu}m$ with the width of $80 {\mu}m$ pHEMT technology was used for the fabrication of this MMIC LNA. Using the series feedback technique, ultra low noise and excellent S11 could be obtained at the same time without the cost of gain at 30GHz-band. The stability factors(Ks) for each stage and overall stage are greater than 1 at full frequency bands by the bias circuits and stabilization circuit. The measured performances, which agree well with the predicted performances, show this 2-stage MMIC LNA has the gain of more than 15.7dB and noise figure of less than 2.09dB over 29GHz to 33GHz.

• Journal of The Korean Astronomical Society
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• v.25 no.1
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• pp.23-46
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• 1992

The electrical, mechanical and optical capabilities have been tested of the microdensitometer PDS 1010GMS at the Korea Astronomy Observatory. The highest stage of scan speed 255 csu (conventional speed unit) is measured to be 47 mm/s. At this speed the position is displaced by $4{\mu}m$ to the direction of scanning and the density is underestimated by $0.4{\sim}0.7D$. Standard deviation in the measured density is proportional to $A^{-0.46}$, where A is the area of scan aperture. The accuracy of position repeatability is ${\pm}1{\mu}m$, and that of density repeatability is ${\pm}(0.003{\sim}0.03)D$. Callier coefficient is determined to be 1.37; the semispecular density is directly proportional to the diffuse density up to 3.5D. Because the logarithmic amplifier has a finite response time, the densities measured at high scan speeds are underestimated to the degree that speeds higher than 200 csu are inadequate for making an accurate astronomical photometry. After power is on, an about 5 hour period of warming is required to stabilize the system electrically and mechanically as well. On the basis of this performance test, we have determined the followings as the optimum scan parameters for the astronomical photometry: For the scan aperture $10\;\sim\;20{\mu}m$ is optimal, and for the scan speed. $20\;{\sim}\;50$ csu is appropriate. These parameter values are chosen in such a way that they may keep the density repeatability within ${\pm}0.01D$, the position displacement under $1{\mu}m$, and the density underestimation below 0.1D even in high density regions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.8
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• pp.744-751
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• 2004

This paper presents the implementation of the low cost and high speed RF ATE(Automatic Test Equipment) system, which can be a reasonable solution for reducing the test cost of RF devices. This paper suggests high speed and precise measurement capabilities which are realized by the 16 independent RF ports with high speed switching time and high accuracy digitizer using the industry standard Versus module eXtensions for Instrument(VXI) General Purpose Interface Bus(GPIB) interfaces. Also, the system has the capabilities of quad-site test which can dramatically increase the device throughput. This paper concludes with the demonstration of the implemented ATE system through the setup of RF Power Amplifier Module(PAM), which is under the most competitive market situation.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.120-126
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• 2000

This paper dealt with the developed portable electric field meter which consisted of planar-type sensor, analog amplifier with gain controller, A/D convertor, and display unit. The principle of the planar-type sensor for detecting time-varying electric field of extremely low frequency (ELF) bandwidth was described, and a calibration system using cylindrical guard electrodes and parallel-plate electrodes was proposed. From the calibration experiment, the frequency bandwidth and the sensitivity of the developed electric field meter was $17[Hz]{\sim}7[kHz]$, and 4.45[mV/V/m], respectively. Also it can measure the electric field strength up to 10[kV/m], and the measured result was displayed on the liquid crystal display in digit. The electric field meter can be widely applied to measure electric field strength radiated from power lines, computers, and home appliances such as hair dryer, heater, etc.

• Journal of Sensor Science and Technology
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• v.27 no.2
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• pp.93-98
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• 2018

In this paper, an energy-efficient 11.49-bit successive approximation register (SAR) capacitance-to-digital converter (CDC) for capacitive sensors with a figure of merit (FoM) of 31.6 pJ/conversion-step is presented. The CDC employs a SAR algorithm to obtain low power consumption and a simplified structure. The proposed circuit uses a capacitive sensing amplifier (CSA) and a dynamic latch comparator to achieve parasitic capacitance-insensitive operation. The CSA adopts a correlated double sampling (CDS) technique to reduce flicker (1/f) noise to achieve low-noise characteristics. The SAR algorithm is implemented in dual operating mode, using an 8-bit coarse programmable capacitor array in the capacitance-domain and an 8-bit R-2R digital-to-analog converter (DAC) in the charge-domain. The proposed CDC achieves a wide input capacitance range of 29.4 pF and a high resolution of 0.449 fF. The CDC is fabricated in a $0.18-{\mu}m$ 1P6M complementary metal-oxide-semiconductor (CMOS) process with an active area of 0.55 mm2. The total power consumption of the CDC is $86.4{\mu}W$ with a 1.8-V supply. The SAR CDC achieves a measured 11.49-bit resolution within a conversion time of 1.025 ms and an energy-efficiency FoM of 31.6 pJ/step.

• Journal of Electrical Engineering and information Science
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• v.3 no.2
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• pp.239-244
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• 1998

Piezoelectric pressure sensors and pyroelectric infrared detectors based on ZnO thin film have been integrated with GaAs metal-semiconductor field effect transistor (MESFET) amplifiers. Surface micromachining techniques have been applied in a GaAs MESFET process to form both microsensors and electronic circuits. The on-chip integration of microsensors such as pressure sensors and infrared detectors with GaAs integrated circuits is attractive because of the higher operating temperature up to 200 oC for GaAs devices compared to 125 oC for silicon devices and radiation hardness for infrared imaging applications. The microsensors incorporate a 1${\mu}$m-thick sputtered ZnO capacitor supported by a 2${\mu}$m-thick aluminum membrane formed on a semi-insulating GaAs substrate. The piezoelectric pressure sensor of an area 80${\times}$80 ${\mu}$m2 designed for use as a miniature microphone exhibits 2.99${\mu}$V/${\mu}$ bar sensitivity at 400Hz. The voltage responsivity and the detectivity of a single infrared detector of an area 80${\times}$80 $\mu\textrm{m}$2 is 700 V/W and 6${\times}$108cm$.$ Hz/W at 10Hz respectively, and the time constant of the sensor with the amplifying circuit is 53 ms. Circuits using 4${\mu}$m-gate GaAs MESFETs are fabricated in planar, direct ion-implanted process. The measured transconductance of a 4${\mu}$m-gate GaAs MESFET is 25.6 mS/mm and 12.4 mS/mm at 27 oC and 200oC, respectively. A differential amplifier whose voltage gain in 33.7 dB using 4${\mu}$m gate GaAs MESFETs is fabricated for high selectivity to the physical variable being sensed.