• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.170-170
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• 2010

Thin-film transistors (TFT) have become the key components of electronic and optoelectronic devices. Most conventional thin-film field-effect transistors in display applications use an amorphous or polycrystal Si:H layer as the channel. This silicon layers are opaque in the visible range and severely restrict the amount of light detected by the observer due to its bandgap energy smaller than the visible light. Therefore, Si:H TFT devices reduce the efficiency of light transmittance and brightness. One method to increase the efficiency is to use the transparent oxides for the channel, electrode, and gate insulator. The development of transparent oxides for the components of thin-film field-effect transistors and the room-temperature fabrication with low voltage operations of the devices can offer the flexibility in designing the devices and contribute to the progress of next generation display technologies based on transparent displays and flexible displays. In this thesis, I report on the dc performance of transparent thin-film transistors using amorphous indium tin zinc oxides for an active layer. $SiO_2$ was employed as the gate dielectric oxide. The amorphous indium tin zinc oxides were deposited by RF magnetron sputtering. The carrier concentration of amorphous indium tin zinc oxides was controlled by oxygen pressure in the sputtering ambient. Devices are realized that display a threshold voltage of 4.17V and an on/off ration of ${\sim}10^9$ operated as an n-type enhancement mode with saturation mobility with $15.8\;cm^2/Vs$. In conclusion, the fabrication and characterization of thin-film transistors using amorphous indium tin zinc oxides for an active layer were reported. The devices were fabricated at room temperature by RF magnetron sputtering. The operation of the devices was an n-type enhancement mode with good saturation characteristics.

• International Journal of Industrial Entomology and Biomaterials
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• v.21 no.2
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• pp.180-183
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• 2010

This study was performed to investigate the temperature-dependent development, longevity and oviposition of an indigenous larval parasitoid, Meteorus pulchricornis, on tobacco cutworm, Spodoptera litura. M. pulchricornis were reared at nine constant temperatures between 15 and $35^{\circ}C$. The developmental times of each three developmental stage decreased from 38.7 to 16.3 d between 15 and $30^{\circ}C$. However, M. pulchricornis showed longer developmental time at $32.5^{\circ}C$ (9.5, 7.7 and 17.2 days for each three developmental stage) than at $30^{\circ}C$ (8.9, 7.3 and 16.3 days for each three developmental stage). Immature M. pulchricornis could not develop any more at $35^{\circ}C$. The lower developmental threshold estimated by linear regression equation for the egg to cocoon, cocoon to adult emergence and egg to adult emergence were 5.1, 4.6 and $4.5^{\circ}C$. The thermal constant for each of the three stages were 217.2, 176.2 and 403.8 degree-days, respectively. When no food or 50% honey solution as a food source is provided for M. pulchricornis, the parasitoid survived for 8.3 and 55.9 days at $25^{\circ}C$, respectively. M. pulchricornis females laid 5.2 eggs daily and total of 131.6 eggs at $25^{\circ}C$ until it died. Peak age-specific fecundity was observed on $14^{th}$ day (9.6 cocoons) after parasitoid emergence and gradually decreased thereafter.

• Journal of The Korean Society of Agricultural Engineers
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• v.60 no.4
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• pp.113-122
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• 2018

Thermal stress of pigs causes decreased feed consumption and weight gain rate, immunosuppression, reproductive disorders, and increased mortality. The concept of the temperature-humidity index (THI) has been widely used to evaluate the degree of thermal stress of pigs. However, use of this concept is strongly restricted for animals living in the enclosed facilities. In this study, Building Energy Simulation (BES) technique was used to realize the energy flow among outside weather conditions, building materials, and animals. Especially, mechanisms of sensible and latent heat generation from pigs according to surrounding air temperature and their weight were designed to accurately evaluate the THI values inside the pig house. The THI values computed by the BES model were compared to those calculated by method of the report (NIAS, 2016), the model of this study predicted the start date of heat stress about 9~76 days earlier compared to the NIAS model. Results of the BES model also showed higher frequencies of the THI above the THI threshold for pigs, indicating that conventional model has a possibility of underestimating the degree of heat stress of pigs.

• Korean journal of applied entomology
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• v.44 no.3 s.140
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• pp.225-230
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• 2005

This study was conducted to investigate the developmental characteristics of cabbage armyworm, Mamestra brassicae L. (Lepidoptera: Noctuidae) by different temperatures and its seasonal occurrence in pepper field. Under four constant temperatures, 15, 20, 22 and $25^{\circ}C$, developmental periods from egg to adult were 88.3, 63.0, 52.3, and 42.8 days, respectively, with egg periods being 9.2, 6.2, 5.0 and 3.9 days, and larval periods being 40.5, 30.1, 23.3 and 21.2 days, respectively. Developmental threshold and thermal requirement in degree-days (DD) were $7.9^{\circ}C$ and 69.4 DD for egg, $4.8^{\circ}C$ and 434.8 DD for larva and $6.7^{\circ}C$ and 344.8 DD for pupa. Fecundity of female increased as temperature increased laying 1262.1 eggs at $15^{\circ}C$, 1663.8 eggs at $20^{\circ}C$ and 1763.2 eggs at $25^{\circ}C$. Mean numbers of eggs per egg-mass were 99.4, 114.7 and 167.9 under the three constant temperatures, respectively. In Daegwallyeong highland area, this noctuid occurred from mid June to late August and has two generations a year reaching peak two times, one at late June and the other at early August.

• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.423-429
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• 1997

We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of $500^{\circ}C$, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.2MV/cm. The electric resistivity was $2.0{\times}10^{12}{\Omega}{\cdot}cm$. PLT thin films had polycrystal structure of perovskite and pyrochlore at the higher substrate temperature than $450^{\circ}C$, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/Al structure. At the result, threshold voltage was $35.2V_{rms}$ and brightness was $2400cd/m^{2}$ at $50V_{rms}$ and 1kHz. Maximum luminescence efficiency was 0.811m/W.

• Korean Journal of Agricultural and Forest Meteorology
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• v.11 no.4
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• pp.221-232
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• 2009

The geographical distribution of freeze risk determines the latitudinal and altitudinal limits and the maximum acreage suitable for fruit production. Any changes in its pattern can affect the policy for climate change adaptation in fruit industry. High-definition digital maps for such applications are not available yet due to uncertainty in the combined responses of temperature and dormancy depth under the future climate scenarios. We applied an empirical freeze risk index, which was derived from the combination of the dormancy depth and threshold temperature inducing freeze damage to dormant buds of 'Changhowon Hwangdo' peach trees, to the high-definition digital climate maps prepared for the current (1971-2000), the near future (2011-2040) and the far future (2071-2100) climate scenarios. According to the geospatial analysis at a landscape scale, both the safe and risky areas will be expanded in the future and some of the major peach cultivation areas may encounter difficulty in safe overwintering due to weakening cold tolerance resulting from insufficient chilling. Our test of this method for the two counties representing the major peach cultivation areas in South Korea demonstrated that the migration of risky areas could be detected at a sub-grid scale. The method presented in this study can contribute significantly to climate change adaptation planning in agriculture as a decision aids tool.

• Korean journal of applied entomology
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• v.55 no.2
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• pp.149-160
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• 2016

Temperature-dependent development and fecundity of apterious Rhopalosiphum padi (L.) (Hemiptera: Aphididae) were examined at six constant temperatures (10, 15, 20, 25, 30 and $35{\pm}1.0^{\circ}C$, RH 50-70%, 16L:8D). Development time of nymphs decreased with increasing temperature and ranged from 42.9 days at $10^{\circ}C$ to 4.7 days at $30^{\circ}C$. The nymphs did not develop until adult at $35^{\circ}C$ because the nymphs died during the 2nd instar. The lower threshold temperature and thermal constant of nymph were estimated as $8.3^{\circ}C$ and 101.6 degree days, respectively. The relationships between development rates of nymph and temperatures were well described by the nonlinear model of Lactin 2. The distribution of development times of each stage was successfully fitted to the Weibull function. The longevity of apterious adults decreased with increasing temperature ranging from 24.0 days at $15^{\circ}C$ to 4.3 days at $30^{\circ}C$, with abnormally short longevity of 11.1 days at $10^{\circ}C$. R. padi showed the highest fecundity at $20^{\circ}C$ (38.2) and the lowest fecundity at $10^{\circ}C$ (3.9). In this study, we provided component sub-models for the oviposition model of R. padi: total fecundity, age-specific cumulative oviposition rate, and age-specific survival rate as well as adult aging rate based on the adult physiological age.

• Korean Journal of Agricultural and Forest Meteorology
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• v.20 no.2
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• pp.190-204
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• 2018

The probability of safe cropping and the major phenological stages in rice were assessed using daily mean temperature data from 1981 to 2016 at 27 sites in North Korea. The threshold temperatures for early marginal transplanting date (EMTD), marginal harvesting date (MHVD), safe marginal heading date (SMHD), and cumulative temperature-based heading date (CTHD) were set to be $14^{\circ}C$, $13^{\circ}C$, $22^{\circ}C$ for 40 days after heading, and cumulative temperature of $1200^{\circ}C$ to MHVD, respectively. The safe heading date (SHD) was assumed to be either SMHD or CTHD whichever was earlier. It was also assumed that the minimum requirement for the suitability of safe rice cropping was met when both SMHD and CTHD appeared along with the time period of 60 days or more from EMTD to SHD. It was analyzed that 17 sites (Kaesong, Haeju, Yongyon, Singye, Sariwon, Nampo, Pyongyang, Anju, Kusong, Sinuiju, Changjon, Wonsan, Hamhung, Pyonggang, Huichon, Supung, Kanggye) had 90% or higher probability, two sites (Yangdok, Sinpo) had 80-90% probability, and eight sites (Kimchaek, Chunggang, Chongjin, Sonbong, Changjin, Pungsan, Hyesan, Samjiyon) had less than 80% probability of the safe rice cropping. For each region, the representative EMTD, SHD, and MHVD were analyzed using the 80 percentile of total years tested. The ranges for EMTD, SHD, and MHVD were May 4 in Sariwon~May 24 in Sinpo, June 21 in Kanggye~August 11 in Haeju, and September 17 in Kanggye~October 16 in Haeju and Changjon, respectively. Time durations from EMTD to SHD and from SHD to MHVD were 67~97 days and 57~72 days, respectively, depending on the regions. This study would facilitate modeling efforts for rice yield simulation in future studies. Our results would also provide basic information for practical researches on the rice cropping system in North Korea.

• Korean Journal of Environmental Biology
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• v.37 no.4
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• pp.568-578
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• 2019

The nymphal development of the potato aphid, Macrosiphum euphorbiae (Thomas), was studied at seven constant temperatures (12.5, 15.0, 17.5, 20.0, 22.5, 25.0, and 27.5±1℃), 65±5% relative humidity (RH), and 16:8 h light/dark photoperiods. The developmental investigation of M. euphorbiae was separated into two steps, the 1^st through 2^nd and the 3^rd through 4^th stages. The mortality was under 10% at six temperatures. However, it was 53.0% at 27.5℃. The developmental time of the entire nymph stage was 15.5 days at 15.0℃, 6.7 days at 25.0℃, and 9.7 days at 27.5℃. In the immature stage, the lower threshold temperature of the larvae was 2.6℃ and the thermal constant was 144.5 DD. In our analysis of the temperature-development experiment, the Logan-6 model equation was most appropriate for the non-linear regression models (r²=0.99). When the distribution completion model of each development stage of M. euphorbiae larvae was applied to the 2-parameter and 3-parameter Weibull functions, each of the model's goodness of fit was very similar (r²=0.92 and 0.93, respectively). The adult longevity decreased as the temperature increased but the total fecundity of the females at each temperature was highest at 20℃. The life table parameters were calculated using the whole lifespan periods of M. euphorbiae at the above six temperatures. The net reproduction rate (R₀) was highest at 20.0℃(63.2). The intrinsic rate of increase (r_m) was highest at 25℃(1.393). The finite rate of doubling time (D_t) was the shortest at 25.0℃(2.091). The finite rate of increase (λ) was also the highest at 25.0℃(1.393). The mean generation time(T) was the shortest at 25.0℃(9.929).