• Proceedings of the KSME Conference
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• 2003.04a
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• pp.1321-1325
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• 2003

Nickel thin film is one of the most important materials used in micromachined structure. To measure the mechanical properties of electroplated nickel thin film, two techniques are adopted and compared quantitatively with. One is nano-indentation test to measure the elastic modulus. The other is tensile test to measure not only elastic modulus but also yield strength and plastic deformation, ultimate strength. To perform the tensile test, the test apparatus was constructed with linear guided servo motor for actuation, load cell for force measurement and dual microscope for strain measurement.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.11a
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• pp.109-110
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• 2008

• Journal of the Semiconductor & Display Technology
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• v.3 no.2
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• pp.23-26
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• 2004

Thin film is one of the most general structures used in micro-electro-mechanical systems (MEMS). To measure the mechanical properties of SU-8 film, tensile testing was adopted which offers not only elastic modulus but also yield strength and plastic deformation by load-displacement curve. Tensile testing system was constructed with linear guided servo motor for actuation, load cell for force measurement and dual microscope for strain measurement.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.95-98
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• 2015

Organic polymer dielectric thin films of styrene and vinyl acetate were prepared by the plasma polymerization deposition technique and applied for the fabrication of an organic thin film transistor device. The structural properties of the plasma polymerized thin films were characterized by Fourier-transform infrared spectroscopy, X-ray diffraction, atomic force microscopy, and contact angle measurement. Investigation of the electrical properties of the plasma polymerized thin films was carried out by capacitance-voltage and current-voltage measurements. The organic thin film transistor device with gate dielectric of the plasma polymerized thin film revealed a low operation voltage of −10V and a low threshold voltage of −3V. It was confirmed that plasma polymerized thin films of styrene and vinyl acetate could be applied to functional organic thin film transistor devices as the gate dielectric.

• Journal of the Korean Graphic Arts Communication Society
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• v.14 no.1
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• pp.1-15
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• 1996

In this paper, the preparation of lead zirconium titanate(PZT) thin film by sol-gel processing was descried. Thin film coated with thickness of 4${\mu}{\textrm}{m}$ on the stainless steel substrates using the multiple spin-coating process. The crystalline phases of PZT powder and film were investigated by X-ray diffraction pattern and PZT thin film has perovskite structure over 600 C annealing temperature. Corona charging characteristics of the ferroelectric PZT thin film at 600 C were investigated by electrophotographic measurement. A difference in the charging characteristics between positive and negative corona charging was found. The charge acceptance depended in the polarity of corona and the poling of film. According to the D-E hysteresis measurment, PZT thin film can be poled by corona charging without use of top electrode. The remnant polarization in the PZT thin film is generally in the order of 48$\mu$C/$\textrm{cm}^2$. From this results, the ferroelectric PZT thin film will be possible to apply for the add-on type imaging formation.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2005.06a
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• pp.565-568
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• 2005

We describe a new scheme of dispersive white-light interferometer that is capable of measuring the thickness profile of thin-film layers, for which not only the top surface height profile but also the film thickness of the target surface should be measured at the same time. The interferometer is found useful particularly for in-situ inspection of micro-engineered surfaces such as liquid crystal displays, which requires for high-speed implementation of 3-D surface metrology.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.266-272
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• 2002

The stochiometric mixture of evaporating materials for the ZnIn$_2$S$_4$ single crystal thin film was prepared from horizontal furnace. To obtain the ZnIn$_2$S$_4$ single crystal thin film, ZnIn$_2$S$_4$ mixed crystal was deposited on throughly etched semi-insulating GaAs(100) in the Hot Wall Epitaxy(HWE) system. The source and substrate temperature were 610 $^{\circ}C$ and 450 $^{\circ}C$, respectively and the growth rate of the ZnIn$_2$S$_4$ single crystal thin film was about 0.5 $\mu\textrm{m}$/hr. The crystalline structure of ZnIn$_2$S$_4$ single crystal thin film was investigated by photo1uminescence and double crystal X-ray diffraction(DCXD) measurement. The carrier density and mobility of ZnIn$_2$S$_4$ single crystal thin film measured from Hall effect by van der Pauw method are 8.51${\times}$10$\^$17/ cm$\^$-3/, 291 $\textrm{cm}^2$/V$.$s at 293 $^{\circ}$K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c - axis of the ZnIn$_2$S$_4$ single crystal thin film, we have found that the values of spin orbit splitting ΔSo and the crystal field splitting ΔCr were 0.0148 eV and 0.1678 eV at 10 $^{\circ}$K, respectively. From the photoluminescence measurement of ZnIn$_2$S$_4$ single crystal thin film, we observed free excition (E$\_$X/) typically observed only in high quality crystal and neutral donor bound exciton (D$^{\circ}$,X) having very strong peak intensity. The full width at half maximum and binding energy of neutral donor bound excition were 9 meV and 26 meV, respectively. The activation energy of impurity measured by Haynes rule was 130 meV.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.3
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• pp.1-6
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• 2007

In this study, the pentacene thin films were prepared by the soluble process, and characterized fur the application of the organic thin film transistor(OTFT) device. To dissolve the pentacene material, two kinds of solvents such as toluene and chloroform were used, and the effects of these solvents on the properties of pentacene thin films coated on ITO/Glass substrate were investigated. Pentacene thin films were prepared by using spin-coating methode and characterized the surface morphology, crystalline and electrical properties. From the AFM measurement, the surface morphology of the pentacene film dissolved with chloroform was improved compared with the one dissolved with toluene solvent. XRD measurement showed that all prepared pentacene film samples were amorphous crystal phases without crystallization of the films. The electrical properties of the pentacene film dissolved with chloroform showed better results than the ones using toluene solvent by hall measurement system. The carrier concentration and the mobility values of pentacene films using chloroform solvent were found to be $-3.225{\times}10^{14}\;cm^{-3}$ and $3.5{\times}10^{-1}\;cm^2{\cdot}V^{-1}{\cdot}S^[-1}$, respectively. The resistivity was about $2.5{\times}10^2\;{\Omega}{\cdot}cm$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.22 no.2
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• pp.134-138
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• 2021

Various types of precision plastic thin films are used widely in high-performance displays, such as smartphones. For plastic thin-films manufactured by the Roll-to-Roll process, the film thickness must be measured and managed while moving. In the Roll-to-Roll process, wrinkles are generated when tension is applied to the film, which causes an inclination on the optical axis of the thickness gauge, resulting in a loss of accuracy. Therefore, this study attempted to develop an optical interference tomography measurement system. In this study, the tilt angle of the film was measured to correct the measurement value error in the thickness gauge caused by the tilt of the film. The system was constructed so that the laser was irradiated on the tilted film, and the laser reflected from the film was formed on the PSD. The relationship between the tilt angle of the film and the output value of the PSD was obtained experimentally. Using this, a device to measure the tilt angle of the film was constructed, and angle measurements were taken at a speed of 250,000Hz.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.783-788
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• 2008

We suggest a CNT-based gas sensor for breath alcohol measurement. The sensor was composed of single-walled carbon nanotubes (SWCNTs) thin film on flexible PES (polyethersulfone) substrate, and the SWCNTs thin film was formed by multiple spray-coating with SWCNTs solution which was well-dispersed, highly controlled and functionalized in ethanol solvent. In this work, three types of SWCNTs thin films were deposited with changes in the number of spray-coatings to 20, 40 and 60 times in order to compare electrical response properties of the SWCNTs thin films. from the fabricated sensors, conductance and capacitance responses were measured and discussed. Alcohol gas sensors have been commercialized widely as gauge for breath alcohol measurement which is applicable to checking whether car drivers are drinking-driving or not. Our alcohol gas sensors showed good sensitivity and linearity even at room temperature.